6r165p
Abstract: 6R165 IPW60R165CP PG-TO247 JESD22 SP000095483
Text: IPW60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW60R165CP
PG-TO247-3-1
SP000095483
6R165P
6r165p
6R165
IPW60R165CP
PG-TO247
JESD22
SP000095483
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Untitled
Abstract: No abstract text available
Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V 39 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPB60R165CP
PG-TO263
SP000096439
6R165P
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6R165P
Abstract: 6R165 transistor SMD f12 SP000096439 IPB60R165CP IPP60R165CP JESD22 marking D12 smd transistor marking F12 DF marking code smd transistor
Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPB60R165CP
PG-TO263
IPP60R165CP
SP000096439
6R165P
6R165P
6R165
transistor SMD f12
SP000096439
IPB60R165CP
IPP60R165CP
JESD22
marking D12
smd transistor marking F12
DF marking code smd transistor
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Infineon 6R165P
Abstract: 6R165P 6R165 IPP60R165CP IPP60R165
Text: IPP60R165CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPP60R165CP
PG-TO220-3-1
SP000084279
6R165P
Infineon 6R165P
6R165P
6R165
IPP60R165CP
IPP60R165
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Infineon 6R165P
Abstract: 6r165p DF 331 TRANSISTOR transistor df 331 IPA60R165CP 6R165
Text: IPA60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R165CP
PG-TO220-3-31
SP000096437
6R165P
Infineon 6R165P
6r165p
DF 331 TRANSISTOR
transistor df 331
IPA60R165CP
6R165
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6R165P
Abstract: Infineon 6R165P IPA60R165CP JESD22 SP000096437 6R165
Text: IPA60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPA60R165CP
PG-TO220
SP000096437
6R165P
6R165P
Infineon 6R165P
IPA60R165CP
JESD22
SP000096437
6R165
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6R165P
Abstract: 6R165 IPW60R165CP JESD22 SP000095483 US101I
Text: IPW60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW60R165CP
PG-TO247-3
SP000095483
6R165P
009-134-A
O-247
6R165P
6R165
IPW60R165CP
JESD22
SP000095483
US101I
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6r165p
Abstract: Infineon 6R165P
Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V 39 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPB60R165CP
PG-TO263
SP000096439
6R165P
6r165p
Infineon 6R165P
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Untitled
Abstract: No abstract text available
Text: IPP60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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IPP60R165CP
PG-TO220
SP000084279
6R165P
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PG-TO-247-3
Abstract: 6R165P IPW60R165CP JESD22 SP000095483 CoolMOS Power Transistor
Text: IPW60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPW60R165CP
PG-TO247-3
SP000095483
6R165P
PG-TO-247-3
6R165P
IPW60R165CP
JESD22
SP000095483
CoolMOS Power Transistor
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6r165p
Abstract: 6R165 IPW60R165CP Infineon 6R165P JESD22 SP000095483
Text: IPW60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPW60R165CP
PG-TO247-3-1
SP000095483
6R165P
6r165p
6R165
IPW60R165CP
Infineon 6R165P
JESD22
SP000095483
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Marking d12
Abstract: No abstract text available
Text: IPA60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPA60R165CP
PG-TO220
SP000096437
6R165P
Marking d12
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6r165p
Abstract: Infineon 6R165P PG-TO220-3-31 DF 331 TRANSISTOR IPA60R165CP PG-TO-220-3-31 SP000096437 JESD22 transistor marking code AR3 6R165
Text: IPA60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPA60R165CP
PG-TO220-3-31
SP000096437
6R165P
6r165p
Infineon 6R165P
PG-TO220-3-31
DF 331 TRANSISTOR
IPA60R165CP
PG-TO-220-3-31
SP000096437
JESD22
transistor marking code AR3
6R165
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6r165p
Abstract: Infineon 6R165P IPP60R165 IPP60R165CP JESD22 SP000084279 Energy Technologies 6r165
Text: IPP60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPP60R165CP
PG-TO220
SP000084279
6R165P
6r165p
Infineon 6R165P
IPP60R165
IPP60R165CP
JESD22
SP000084279
Energy Technologies
6r165
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6r165p
Abstract: Marking d12 DF marking code smd transistor 6R165 smd diode UJ 09 Transistor d12 t f12 SMD TRANSISTOR Infineon 6R165P
Text: IPB60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPB60R165CP
PG-TO263
IPP60R165CP
SP000096439
6R165P
6r165p
Marking d12
DF marking code smd transistor
6R165
smd diode UJ 09
Transistor d12 t
f12 SMD TRANSISTOR
Infineon 6R165P
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IPB60R165CP
Abstract: 6R165P f12 SMD TRANSISTOR transistor SMD f12 JESD22 SP000096439 smd transistor marking F12 marking code ff p SMD Transistor 6R165 SMD TRANSISTOR MARKING code DD
Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V 39 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPB60R165CP
PG-TO263
SP000096439
6R165P
IPB60R165CP
6R165P
f12 SMD TRANSISTOR
transistor SMD f12
JESD22
SP000096439
smd transistor marking F12
marking code ff p SMD Transistor
6R165
SMD TRANSISTOR MARKING code DD
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6R165P
Abstract: Infineon 6R165P Transistor d12 t 6R165
Text: IPW60R165CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPW60R165CP
PG-TO247-3-1
SP000095483
6R165P
6R165P
Infineon 6R165P
Transistor d12 t
6R165
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6R165P
Abstract: 6R165 CoolMOS Power Transistor Infineon 6R165P IPI60R165CP JESD22 Marking d12 Transistor d12 t
Text: IPI60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPI60R165CP
PG-TO262
6R165P
6R165P
6R165
CoolMOS Power Transistor
Infineon 6R165P
IPI60R165CP
JESD22
Marking d12
Transistor d12 t
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