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    6R165 Search Results

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    6R165 Price and Stock

    TE Connectivity DG1236R16-55S1

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    DigiKey DG1236R16-55S1 Bulk 25
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    Avnet Americas DG1236R16-55S1 Bulk 17 Weeks, 5 Days 25
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    Mouser Electronics DG1236R16-55S1
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    Interstate Connecting Components DG1236R16-55S1
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    Master Electronics DG1236R16-55S1
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    TE Connectivity DG1236R16-55P1

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    DigiKey DG1236R16-55P1 Bulk 25
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    Interstate Connecting Components DG1236R16-55P1
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    Vishay Dale RCWE1206R165FKEA

    RES 0.165 OHM 1% 1/2W 1206
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    DigiKey RCWE1206R165FKEA Reel 5,000
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    TE Connectivity YDG1236R1655P1C117

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    Avnet Americas YDG1236R1655P1C117 Bulk 16 Weeks 25
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    Mouser Electronics YDG1236R1655P1C117
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    Newark YDG1236R1655P1C117 Bulk 8 1
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    Master Electronics YDG1236R1655P1C117
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    TE Connectivity DG1236R16-55P1-090

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    DigiKey DG1236R16-55P1-090 Bag 14
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    Avnet Americas DG1236R16-55P1-090 Bulk 26 Weeks 14
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    Interstate Connecting Components DG1236R16-55P1-090
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    Master Electronics DG1236R16-55P1-090
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    6R165 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6r165p

    Abstract: 6R165 IPW60R165CP PG-TO247 JESD22 SP000095483
    Text: IPW60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R165CP PG-TO247-3-1 SP000095483 6R165P 6r165p 6R165 IPW60R165CP PG-TO247 JESD22 SP000095483

    Untitled

    Abstract: No abstract text available
    Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V 39 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R165CP PG-TO263 SP000096439 6R165P

    6R165P

    Abstract: 6R165 transistor SMD f12 SP000096439 IPB60R165CP IPP60R165CP JESD22 marking D12 smd transistor marking F12 DF marking code smd transistor
    Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R165CP PG-TO263 IPP60R165CP SP000096439 6R165P 6R165P 6R165 transistor SMD f12 SP000096439 IPB60R165CP IPP60R165CP JESD22 marking D12 smd transistor marking F12 DF marking code smd transistor

    Infineon 6R165P

    Abstract: 6R165P 6R165 IPP60R165CP IPP60R165
    Text: IPP60R165CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R165CP PG-TO220-3-1 SP000084279 6R165P Infineon 6R165P 6R165P 6R165 IPP60R165CP IPP60R165

    Infineon 6R165P

    Abstract: 6r165p DF 331 TRANSISTOR transistor df 331 IPA60R165CP 6R165
    Text: IPA60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R165CP PG-TO220-3-31 SP000096437 6R165P Infineon 6R165P 6r165p DF 331 TRANSISTOR transistor df 331 IPA60R165CP 6R165

    6R165P

    Abstract: Infineon 6R165P IPA60R165CP JESD22 SP000096437 6R165
    Text: IPA60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R165CP PG-TO220 SP000096437 6R165P 6R165P Infineon 6R165P IPA60R165CP JESD22 SP000096437 6R165

    6R165P

    Abstract: 6R165 IPW60R165CP JESD22 SP000095483 US101I
    Text: IPW60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R165CP PG-TO247-3 SP000095483 6R165P 009-134-A O-247 6R165P 6R165 IPW60R165CP JESD22 SP000095483 US101I

    6r165p

    Abstract: Infineon 6R165P
    Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V 39 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R165CP PG-TO263 SP000096439 6R165P 6r165p Infineon 6R165P

    Untitled

    Abstract: No abstract text available
    Text: IPP60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R165CP PG-TO220 SP000084279 6R165P

    PG-TO-247-3

    Abstract: 6R165P IPW60R165CP JESD22 SP000095483 CoolMOS Power Transistor
    Text: IPW60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R165CP PG-TO247-3 SP000095483 6R165P PG-TO-247-3 6R165P IPW60R165CP JESD22 SP000095483 CoolMOS Power Transistor

    6r165p

    Abstract: 6R165 IPW60R165CP Infineon 6R165P JESD22 SP000095483
    Text: IPW60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R165CP PG-TO247-3-1 SP000095483 6R165P 6r165p 6R165 IPW60R165CP Infineon 6R165P JESD22 SP000095483

    Marking d12

    Abstract: No abstract text available
    Text: IPA60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R165CP PG-TO220 SP000096437 6R165P Marking d12

    6r165p

    Abstract: Infineon 6R165P PG-TO220-3-31 DF 331 TRANSISTOR IPA60R165CP PG-TO-220-3-31 SP000096437 JESD22 transistor marking code AR3 6R165
    Text: IPA60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R165CP PG-TO220-3-31 SP000096437 6R165P 6r165p Infineon 6R165P PG-TO220-3-31 DF 331 TRANSISTOR IPA60R165CP PG-TO-220-3-31 SP000096437 JESD22 transistor marking code AR3 6R165

    6r165p

    Abstract: Infineon 6R165P IPP60R165 IPP60R165CP JESD22 SP000084279 Energy Technologies 6r165
    Text: IPP60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R165CP PG-TO220 SP000084279 6R165P 6r165p Infineon 6R165P IPP60R165 IPP60R165CP JESD22 SP000084279 Energy Technologies 6r165

    6r165p

    Abstract: Marking d12 DF marking code smd transistor 6R165 smd diode UJ 09 Transistor d12 t f12 SMD TRANSISTOR Infineon 6R165P
    Text: IPB60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R165CP PG-TO263 IPP60R165CP SP000096439 6R165P 6r165p Marking d12 DF marking code smd transistor 6R165 smd diode UJ 09 Transistor d12 t f12 SMD TRANSISTOR Infineon 6R165P

    IPB60R165CP

    Abstract: 6R165P f12 SMD TRANSISTOR transistor SMD f12 JESD22 SP000096439 smd transistor marking F12 marking code ff p SMD Transistor 6R165 SMD TRANSISTOR MARKING code DD
    Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V 39 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R165CP PG-TO263 SP000096439 6R165P IPB60R165CP 6R165P f12 SMD TRANSISTOR transistor SMD f12 JESD22 SP000096439 smd transistor marking F12 marking code ff p SMD Transistor 6R165 SMD TRANSISTOR MARKING code DD

    6R165P

    Abstract: Infineon 6R165P Transistor d12 t 6R165
    Text: IPW60R165CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R165CP PG-TO247-3-1 SP000095483 6R165P 6R165P Infineon 6R165P Transistor d12 t 6R165

    6R165P

    Abstract: 6R165 CoolMOS Power Transistor Infineon 6R165P IPI60R165CP JESD22 Marking d12 Transistor d12 t
    Text: IPI60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R165CP PG-TO262 6R165P 6R165P 6R165 CoolMOS Power Transistor Infineon 6R165P IPI60R165CP JESD22 Marking d12 Transistor d12 t