Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I < DIGITAL A SS P> M 66250P/FP 5 1 2 0 X 8 -B IT L IN E M E M O R Y F IF O /L IF O DESCRIPTION The M 66250P/FP is a h ig h -s p e e d line m em ory w ith a FIFO PIN CONFIGUR P VIEW) (F irs t In First O ut) structure of 5120 -w o r d X 8 -b it configura
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66250P/FP
66250P/FP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL 66250P/FP 5120 X 8-BIT LINE MEMORY (FIFO/LIFO) T he s p e c ific a tio n s are su b je ct to ch a n g e w ith o u t n o tice . DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 66250P/FP is an integrated circuit consisting of a high-speed line memory with a FIFO (First In First Out)
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M66250P/FP
66250P/FP
5120X
M66250
28P4Y
28P2W
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI < DIGITAL ASSP> M 66250P /FP 5 1 2 0 X 8-BIT LINE MEMORY F IF O /L IF O DESCRIPTION The 66250P/FP is a high-speed line memory with a FIFO (First In First Out) structure of 5120 -w o rd X 8 -b it configura tion which uses high-performance silicon gate CMOS pro
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66250P
M66250P/FP
M66250
DG20550
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I < D IG ITAL A S S P > M662S0P/FP 5120 DESCRIPTION The M 66250P/FP is a h ig h -sp e e d line m em ory with a FIFO 8 -B IT L IN E M E M O R Y {F IF O /L IF O PIN CONFIGURATION TOP VIEW) (F irst In First Out) Structure of 5120 -w o rd X 8 -b it configura
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M662S0P/FP
66250P/FP
M66250
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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lifo
Abstract: lfm 5119
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations o f Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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TNR*G
Abstract: 28P2W-C M66250
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M66250P/FP
5120X
TNR*G
28P2W-C
M66250
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LIFO
Abstract: A5119 28P2W-C M66250 fifo "digital delay line" M6625
Text: MITSUBISHI < DIGITAL ASSP> 66250P/FP 5120 DESCRIPTION The 66250P/FP is a high-speed line memory with a FIFO First In First Out structure of 5120 -w o rdX 8 -b it configura tion which uses high-performance silicon gate CMOS pro cess technology. The M66250 can also be used for LIFO (Last In First Out).
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M66250P/FP
5120X8-BIT
M66250P/FP
M66250
LIFO
A5119
28P2W-C
fifo "digital delay line"
M6625
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