65NH Search Results

Contextual Info: SMT POWER INDUCTORS Power Beads - PA2983.XXXHL Series Current Rating: Over 24Apk Inductance Range: 65nH Height: 4.0mm Max Footprint: 4.0mm x 5.0mm Max Halogen Free Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 7 Part Number

Contextual Info: SMT Power Inductors Power Beads - PA2983.XXXHL Series Current Rating: Over 52Apk Inductance Range: 23nH to 65nH Height: 4.0mm Max Footprint: 4.0mm x 5.0mm Max Halogen Free Electrical Specifications @ 25°C - Operating Temperature -40°C to +125°C Part Number

PA2983-650HLT

Contextual Info: smt POWer inductors Power Beads - PA2983.XXXHL Series Current Rating: Over 24Apk Inductance Range: 65nH Height: 4.0mm Max Footprint: 4.0mm x 5.0mm Max Halogen Free Electrical Specifications @ 25°C — Operating Temperature - 40°C to +130°C 7 Part Number

Contextual Info: SMT Power Inductors Power Beads - PA2983.XXXHL Series Current Rating: Over 52Apk Inductance Range: 23nH to 65nH Height: 4.0mm Max Footprint: 4.0mm x 5.0mm Max Halogen Free Electrical Specifications @ 25°C - Operating Temperature -40°C to +125°C 1 Part Number

arco trimmer

Contextual Info: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:

915 MHz RFID

Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
Contextual Info: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz

Contextual Info: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03010 R5 MBN1600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: SW/TEK INCORPORATED 131 MHZ Low-Loss Filter D ata S h e e t Part Number 854156 Horizontal: 250 kHz/Div Vertical: 10 dB/Div Parameter Center Frequency Insertion Loss Horizontal: 70 kHz/Div Vertical: 1 dB/Div Vertical: 1 deg/Div Unit Minimum Typical Maximum

Contextual Info: Typical Performance Horizontal: 200 kHz/Div Horizontal: 60 kH z/D iv Vertical: 10 dB/Div Vertical: 1 dB/Div Vertical: 2 deg/Div Specifications Parameter Center Frequency Unit M inim um Typical Maximum MHz - 70.875 - dB - 18.5 20 Insertion Loss 1 dB Bandwidth

HSMS-285x model

Abstract: ZERO Bias diode marking code e1 DIODE microstrip RFID tag agilent model marking code marking code e6 sot363 HSMS-285C
Contextual Info: Surface Mount Zero Bias Schottky Detector Diodes Technical Data HSMS-285x Series Features • Surface Mount SOT-23/ SOT-143 Packages SOT-23/SOT-143 Package Lead Code Identification top view • Miniature SOT-323 and SOT-363 Packages SINGLE 3 SERIES 3 1 1

Improved Gate Drive for GTO Series Connections

Abstract: gto Gate Drive circuit snubber IGCT GTO gate drive unit gto 20A GTO switching circuit dynex GTO gtos AN5177-3 DGT409
Contextual Info: AN5177 Application Note AN5177 Improved Gate Drive For GTO Series Connections Application Note Replaces September 2000 version, AN5177-3.0 AN5177-3.1 July 2002 Using an improved gate drive to ease GTO series connection problems. INTRODUCTION There are problems encountered with dynamic voltage sharing

MBN1600EB17D

Contextual Info: Spec.No.IGBT-SP-03002 R5 IGBT MODULE MBN1600EB17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03007 R8 MBN1200E17D Silicon N-channel IGBT FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.

AV02-1377EN

Abstract: HSMS-285C HSMS-285X S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j
Contextual Info: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below

RFID 5.8Ghz

Abstract: phase shift detector at 2.45GHz rf power detector voltage doubler HSMS-286K ATC100A101MCA50 AN1124 ATC100A1 rfid reader 915MHZ microstrip Antenna 5.8ghz ct 4060
Contextual Info: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications

S11 SCHOTTKY diode

Abstract: zero bias diode AV02-1377EN HSMS-285x 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List
Contextual Info: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below

MBN2400ES17D

Abstract: D0C545AB MBN2400E D055A U059 B-057
Contextual Info: IGBT MODULE MBN2400ES17D Preliminary SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

MBN1200E17D

Abstract: 676C DTT11 SFECB
Contextual Info: IGBT MODULE MBN1200E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Microwave detector diodes

Abstract: HSMS-286x Series METAL DETECTOR circuit for make AN1124 high range METAL detector circuit HSMS-286x IC RFID 2.45 GHz k 2865 SCHOTTKY DIODE SOT-143 HSMS-286K
Contextual Info: Agilent HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Features • Surface Mount SOT-23/ SOT-143 Packages SOT-23/SOT-143 Package Lead Code Identification top view • Miniature SOT-323 and SOT-363 Packages SINGLE 3 SERIES 3

SCHOTTKY DIODE SOT-143

Abstract: METAL DETECTOR circuit for make AN1124 HSMS-285x chip diode 047 diode MARKING A1 diode schottky code 10 esd diode a2 on semiconductor marking code sot marking code nt
Contextual Info: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector diodes has been designed and optimized for use in small signal Pin < -20 dBm applications at frequencies below

HSMS2851

Abstract: 3BT SOT-23 sot 23 marking code rad transistor tag 306 marking 2u sma microstrip RFID tag HSMS-2851 HSMS2850 HSMS-285X
Contextual Info: Whpt HEW LETT WLk M PACKARD Surface Mount Zero Bias Schottky D etector D iodes Technical Data HSMS-285X S eries F ea tu res • Surface Mount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: 40 mV/fiW at 915 MHz 30 mV/|iW at 2.45 GHz 22 mV/|uW at 5.80 GHz

100A101MCA50

Contextual Info: That H E W L E T T ' mLfim P A C K A R D Surface Mount Microwave Schottky D etector D iodes in SOT-323 SC -70 Technical Data HSMS-285A Series HSMS-286A Series F eatures Package Lead Code Identification (Top View) • S u rface M ount SOT-323 P ackage • H igh D e te c tio n S en sitiv ity :

circuit for flyback transformer driver

Abstract: zener diode 6w
Contextual Info: Application Report SNOA554C – October 2011 – Revised May 2013 AN-2090 LM3448 -120VAC, 6W Isolated Flyback LED Driver .