GTOS Search Results

5SDF01R2501

Abstract: 5SGA 5SGA30J2501 RTK 031
Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­

Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE E5E D ^^53= 131 aaaa343 a • B Y 359 SERIES 7 = <93-1 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,

M1045

Abstract: BY359 M104 M1040
Contextual Info: N AMER PHILIPS/DISCRETE 55E D • bbS3T31 □□22343 Ö ■ MAINTENANCE TYPE B Y359 SERIES J 7 =^3 -1 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T0-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,

BY359-1000

Abstract: BY359
Contextual Info: BY359 SERIES M AIN TEN ANC E TYPE J v_ FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T 0-22 0 plastic envelopes, featuring fast recovery times. They are intended fo r use as an anti-parallel diode to GTOs and similar high-voltage switches,

Contextual Info: SbE D • 711002b DDM114Ö Ibö HIPHIN BY359 SERIES MAINTENANCE TYPE 5bE D PHILIPS INTERNATIONAL T-03 ' / 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T0-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,

GE capacitor CATALOG

Abstract: A97F8622 GE commutation capacitors A97F8672 SCR 131- 6 W 58 A97F8614 a97f8615 A97F8616 A97F8620 SCR 131- 6 W 40
Contextual Info: SCR Commutation Capacitors 97F8600 Series 600 to 1500 Volts Peak This family of capacitors is designed for high-current applications, such as 1 SCR commutation, (2) snubbers for SCRs, GTOs and other power semiconductors, and (3) for any other circuits where

module bsm 20 gp 60

Abstract: module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge
Contextual Info: Power electronics Permanent innovation in IGBT modules Since the mid-80s, the technical specifications of IGBTs have improved substantially, opening up applications long reserved for bipolar components such as thyristors or GTOs. ver since the Siemens Semiconductor Group and eupec GmbH, a power

Contextual Info: ASC HVSC High Voltage Snubber Capacitors are designed with very high surge/peak current capabilities for demanding low-to-medium voltage applications such as traction inverters, industrial inverters, adjustable-speed/variablefrequency drives and rail grid interties where GTOs and IGCTs

Contextual Info: t¡ T O S H I B A -CDISCRETE/OPTO> 9097250 TOSHIBA CDIS C R E T E /OPTO SEMICONDUCTOR dFI^gtosd 99D 16743 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 9 4 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S I ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: INTRODUCTION Toshiba is one of the world leader in high power semiconductors, today. Since 1972, we have been making great efforts on developing and producing high power GTOs. The first production type of high power GTO was 600V/200A. Since then, the ratings and characteristics of GTO, such as switching perform­

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

GTO thyristor Curve properties

Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Contextual Info: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by

motor control

Abstract: toshiba motor Inverter toshiba
Contextual Info: Industrial M o to r Control System s From large to small, power variation is in high demand for the industrial motor control systems. Generally, Toshiba applies GTOs in large-capacity motor control systems of more than several hundred kilowatts kW . In general

Inverter high voltage power transistor

Abstract: Insulated Gate Bipolar Transistors motor control power transistor motor control
Contextual Info: Industrial M otor Control System s From large to small, power variation is in high demand for the industrial motor control systems. Generally, Toshiba applies GTOs in large-capacity motor control systems of more than several hundred kilowatts kW . In general

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that

FSV 052

Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.

TD4792

Abstract: TD4902 1N4786 1N4815 T0100 TD4791 TD4797 1N481
Contextual Info: TELEDYNE EÒE COMPONENTS a= J17baH D Q Q Q bb Sâ 3 •_ _ T r Q 7 " / ?- LOW LEAKAGE TD4786 THRU TD4815 SILICON EPITAXIAL VARACTRON VOLTAGE-VARIABLE CAPACITANCE DIODES GEOMETRY 415 Replaces 1N4786 & 1N48,15 DO-7 Package GtossBody Dumef Leads, Treied

MTD48

Abstract: V44A
Contextual Info: April 2002 COP8CBE9/CCE9/CDE9 8-Bit CMOS Flash Microcontroller with 8k Memory, Virtual EEPROM, 10-Bit A/D and Brownout Reset General Description The COP8CBE9/CCE9/CDE9 Flash microcontrollers are highly integrated COP8 Feature core devices, with 8k Flash memory and advanced features including Virtual EEPROM, A/D, High Speed Timers, USART, and Brownout

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MTD48

Abstract: MTD56 V44A V68A sine wave inverter 220v
Contextual Info: April 2002 COP8CBR9/COP8CCR9/COP8CDR9 8-Bit CMOS Flash Microcontroller with 32k Memory, Virtual EEPROM, 10-Bit A/D and Brownout General Description The COP8CBR/CCR/CDR9 Flash microcontrollers are highly integrated COP8 Feature core devices, with 32k Flash memory and advanced features including Virtual EEPROM, A/D, High Speed Timers, USART, and Brownout

COP8SG

Abstract: TE-32 44-PIN COP8SGR728Q3 M28B N28B
Contextual Info: ß COP8SGx7 Family 8-Bit CMOS OTP Microcontrollers with 8k or 32k Memory, Two Comparators and USART General Description Note: C O P 8S G x7 devices are lo rm -fit-fun ction com pat­ ible supersets of th e C O P888xG /C S and C O P87L88xG Fam ily devices, and are replacem ents for th e s e in new

GTO ABB 5SGA 2046

Abstract: IG 2200 19
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

COP8FGR728Q3

Abstract: COP8FGXY28M8 COP8FGXY28N8 COP8FGXY40N8 M28B
Contextual Info: COP8FG Family 8-Bit CMOS ROM Based Microcontrollers with 8k to 32k Memory, Two Comparators and USART General Description Note: COP8FG devices are 15 MHz versions of the COP8SG devices. The COP8FGx5 Family ROM based microcontrollers are highly integrated COP8 Feature core devices with 8k to

Contextual Info: COP8SGx7 8-Bit One-Time Programmable OTP Microcontroller General Description CPU Features The COP8SGE7/COP8SGR7 OTP microcontrollers are members of the COP8 feature family using an 8-bit single chip core architecture. These devices are fabricated in a