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    13H4501 Search Results

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    13H4501 Price and Stock

    ABB Low Voltage Products and Systems 5SDF 13H4501

    Diode: hockey-puck rectifying; 4.5kV; 1.2kA; Ø94,5/62,8mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 5SDF 13H4501 1
    • 1 $862.66
    • 10 $728.16
    • 100 $728.16
    • 1000 $728.16
    • 10000 $728.16
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    13H4501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1200 25 1.3 0.48 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 13H4501 Doc. No. 5SYA1104-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link


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    PDF 13H4501 5SYA1104-02 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1200 25x103 1.3 0.48 2800 V A A V mΩ V Fast Recovery Diode 5SDF 13H4501 Doc. No. 5SYA1104-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO


    Original
    PDF 13H4501 5SYA1104-02 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1200 25 1.3 0.48 2800 V A kA V Fast Recovery Diode 5SDF 13H4501 mΩ V Doc. No. 5SYA 1104-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link


    Original
    PDF 13H4501 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 1200 IFRMS = 1900 IFSM = 25 VF0 = 1.30 rF = 0.48 VDClink = 2800 V A A kA V Fast Recovery Diode 5SDF 13H4501 mΩ V Doc. No. 5SYA 1104-02 July 98 •Patented free-floating silicon technology •Low on-state and switching losses


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    PDF 13H4501 CH-5600

    GTO thyristor Curve properties

    Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
    Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by


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    PDF 30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan
    PDF 01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031

    ABB GTO

    Abstract: stud type diodes fjs 500
    Text: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.


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    PDF 05D2501 11F2S01 45x100 ABB GTO stud type diodes fjs 500

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan
    PDF 15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502

    FSV 052

    Abstract: No abstract text available
    Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.


    OCR Scan
    PDF 05D2505 11F2501 07F4501 13H4501 5SDF14H4505 10H6004 01R2501 01R2502 01R2503 01R2504 FSV 052