MBN2400E Search Results

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-02007 R8 MBN2400E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) ∗ High thermal fatigue durability. (∆Tc=70K, N>30,000cycles)

diode byx 64 600

Abstract: MBN2400E17D
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-02007 R7 MBN2400E17D Silicon N-channel IGBT 1. FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)

MBN2400ES17D

Abstract: D0C545AB MBN2400E D055A U059 B-057
Contextual Info: IGBT MODULE MBN2400ES17D Preliminary SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-02007 R8 MBN2400E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) ∗ High thermal fatigue durability. (∆Tc=70K, N>30,000cycles)

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12005 R1 P1 MBN2400E17F Target Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12005 R1 P1 MBN2400E17F Target Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.

MBN2400E17D

Abstract: Measurement of stray inductance for IGBT
Contextual Info: Spec.No.IGBT-SP-02007 R4 IGBT MODULE MBN2400E17D PRELIMINARY SPEC. Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: DUAL DIODE MODULE Spec.No.SR2-SP-08004 R4 MDM1200E17D OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K)

MBN2400E17D

Abstract: Hitachi DSA00281
Contextual Info: DUAL DIODE MODULE Spec.No.SR2-SP-06009R2 P1 MDM900E17D FEATURES OUTLINE DRAWING Unit in mm ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K)

Contextual Info: DUAL DIODE MODULE Spec.No.SR2-SP-08004 R5 MDM1200E17D FEATURES ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Repetitive Peak Reverse Voltage

Contextual Info: DUAL DIODE MODULE Spec.No.SR2-SP-06009R3 MDM900E17D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (TC=25 C) Item Repetitive Peak Reverse Voltage

Contextual Info: DUAL DIODE MODULE Spec.No.SR2-SP-06009R3 MDM900E17D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (TC=25 C) Item Repetitive Peak Reverse Voltage

mbm150gr12

Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Contextual Info: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics

C2E1

Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
Contextual Info: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ