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    Globetek Inc JACK-USBC-163SMT-4BLS1735

    USB TYPE C JACK IPX7 SMT
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    DigiKey JACK-USBC-163SMT-4BLS1735 Bulk 4,626 1
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    Amphenol Sine Systems AT06-3S-MM01

    CONN PLUG HSG 3POS
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    DigiKey AT06-3S-MM01 Bulk 765 1
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    Newark AT06-3S-MM01 Bulk 938 1
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    Interstate Connecting Components AT06-3S-MM01
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    Amphenol Sine Systems AT06-3S-MM01BLK

    CONN PLUG HSG 3POS
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    DigiKey AT06-3S-MM01BLK Bulk 675 1
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    onsemi MOC3063SM

    OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
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    DigiKey MOC3063SM Tube 122 1
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    Newark MOC3063SM Bulk 771 1
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    Rochester Electronics MOC3063SM 3,000 1
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    TME MOC3063SM 182 1
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    Ameya Holding Limited MOC3063SM 2,295
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    Mini-Circuits 086-3SM-

    COAX CABLE SMA TO SMA 3"
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    DigiKey 086-3SM- Bag 83 1
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    63SM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UP78

    Abstract: Aaa SMD MARKING
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 UP78 Aaa SMD MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI-8100D

    Abstract: si8100 Si8100DB
    Text: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si8100DB 2002/95/EC Si8100DB-T2trademarks 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 SI-8100D si8100 PDF

    Fuses A

    Abstract: fuse base IEC 269
    Text: NH KNIFE BLADE NH fuses are typically used for power distribution applications and to protect large electrical devices such as motors, drives, etc. They are available in seven sizes with a current range of 2 to 1600 Amps. NH fuses have knife blades at both ends,


    Original     		NHC00 2/660V 4/660V 6/660V 10/660V 16/660V 20/660V 25/660V 32/660V 35/660V Fuses A fuse base IEC 269 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 25hay 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 11-Mar-11 PDF

    smd marking AAAA

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		Si8402DB Si8402DB-T1-E1 11-Mar-11 smd marking AAAA PDF

    UP78

    Abstract: No abstract text available
    Text: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		Si8413DB Si8413DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 UP78 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		Si8405DB Si8405DB-T1-E1 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline


    Original     		Si8487DB Si8409DB 848xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		Si8413DB Si8413DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC


    Original     		Si8424DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8475EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 VDS (V) - 20 • • • • TrenchFET Power MOSFET Typical ESD Protection 3000 V Gate-Source OVP


    Original     		Si8475EDB 8475E Si8475EDB-T1-E1 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8409DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS 2 D D S G 4 • TrenchFET Power MOSFET


    Original     		Si8409DB Si8401DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		Si8402DB Si8402DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    5SE2250

    Abstract: 5sh20 500NH3B 5SB12 100NH1B
    Text: SIEMENS / ALTECH FUSE CROSS REFERENCE Note: Not all crosses are 100% identical but all are sufficient substitutes for fit, form and function. Siemens No. 3NA1431-6 3NA1432-6 3NA1434-6 3NA2105 3NA2107 3NA2110 3NA2114 3NA2117 3NA2120 3NA2122 3NA2124 3NA2130


    Original     		3NA1431-6 3NA1432-6 3NA1434-6 3NA2105 3NA2107 3NA2110 3NA2114 3NA2117 3NA2120 3NA2122 5SE2250 5sh20 500NH3B 5SB12 100NH1B PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		Si8901EDB 8901E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8407DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View S S 4 6 G S 3 • TrenchFET Power MOSFET


    Original     		Si8407DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8439DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () Max. (A)a, e ID 0.025 at VGS = - 4.5 V - 9.2 0.030 at VGS = - 2.5 V - 8.4 0.037 at VGS = - 1.8 V - 7.6 0.061 at VGS = - 1.5 V - 5.9 0.125 at VGS = - 1.2 V


    Original     		Si8439DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		Si8901EDB 8901E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8902AEDB www.vishay.com Vishay Siliconix N-Channel 24 V D-S MOSFET FEATURES PRODUCT SUMMARY 24 • TrenchFET power MOSFET RS1S2 (Ω) Max. IS1S2 (A) a 0.028 at VGS = 4.5 V 5.9 • Small 2.4 mm x 1.6 mm outline 0.029 at VGS = 3.7 V 5.8 • Thin 0.6 mm max. height


    Original     		Si8902AEDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF