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    63A 216 Search Results

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    63A 216 Price and Stock

    Samtec Inc FW-07-05-G-D-512-163-A

    Board to Board & Mezzanine Connectors Flexible Micro Board Stacking Header, 0.050" Pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FW-07-05-G-D-512-163-A
    • 1 $3.1
    • 10 $3.1
    • 100 $2.31
    • 1000 $2.08
    • 10000 $1.2
    Get Quote

    Samtec Inc FW-15-05-F-D-512-163-A

    Board to Board & Mezzanine Connectors Flexible Micro Board Stacking Header, 0.050" Pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FW-15-05-F-D-512-163-A
    • 1 $4.7
    • 10 $4.7
    • 100 $3.86
    • 1000 $3.13
    • 10000 $2.12
    Get Quote

    Samtec Inc FW-20-05-F-D-512-163-A

    Board to Board & Mezzanine Connectors Flexible Micro Board Stacking Header, 0.050" Pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FW-20-05-F-D-512-163-A
    • 1 $5.46
    • 10 $5.46
    • 100 $4.93
    • 1000 $3.63
    • 10000 $2.45
    Get Quote

    Siemens 3RW52163AC04

    Motor Drives 3RW52 480V 32A 24V spring analog
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 3RW52163AC04
    • 1 $1723.49
    • 10 $1723.49
    • 100 $1723.49
    • 1000 $1723.49
    • 10000 $1723.49
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    Siemens 3RW52163AC14

    Motor Drives 3RW52 480V 32A 110-250V spring analog
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 3RW52163AC14
    • 1 $1723.49
    • 10 $1723.49
    • 100 $1723.49
    • 1000 $1723.49
    • 10000 $1723.49
    Get Quote

    63A 216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g30n60c3

    Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
    Text: HGTG30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


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    PDF HGTG30N60C3 230ns 150oC O-247 HGTG30N60C3 150oC. g30n60c3 TA49051 igbt g30n60c3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60

    c60hc

    Abstract: EN60898 C60HD type d 20 circuit-breaker C60H MINIATURE CIRCUIT BREAKER Breaking capacity C60H dc Circuit Breakers to BS EN 60898 C60H c60h 2p C60HD
    Text: C60H Miniature circuit breakers Ratings 1 to 63A, breaking capacity 15kA Installation • ■ ■ Symmetrical DIN rail. Direct panel mounting. Isobar 4 pan assemblies. Technical data ■ ■ ■ 1, 2, 3 and 4 pole Type B Miniature circuit breakers Current ratings: 1 to 63A at 300C to BS EN60898.


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    PDF EN60898. -300C BS7671. C60HC c60hc EN60898 C60HD type d 20 circuit-breaker C60H MINIATURE CIRCUIT BREAKER Breaking capacity C60H dc Circuit Breakers to BS EN 60898 C60H c60h 2p C60HD

    No 42 G30N60C3D

    Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
    Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


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    PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. TA49051. 1-800-4-HARRIS No 42 G30N60C3D g30n60c3d LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C

    g30n60c3d

    Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
    Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


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    PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. 1-800-4-HARRIS g30n60c3d G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 N-channel enhancement 200V 60A

    G30N60

    Abstract: G30N60C3 G30N60C3S HGTG SC-15 HGT4E30N60C3S HGTG30N60C3 LD26 RHRP3060 TA49051
    Text: HGTG30N60C3, HGT4E30N60C3S Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 and HGT4E30N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


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    PDF HGTG30N60C3, HGT4E30N60C3S HGTG30N60C3 HGT4E30N60C3S 150oC. G30N60 G30N60C3 G30N60C3S HGTG SC-15 LD26 RHRP3060 TA49051

    Circuit Breakers to BS EN 60898

    Abstract: 2 pole mcb C60HD vigi C60 1 pole C60H RCBO C60HC mcb C60HB 3 pole vigi vigi C60H 3p 63a
    Text: C60H Miniature circuit breakers Ratings 1 to 63A C60HB type B 3 - 5In Applications Protection and control of circuits against overloads and short circuits. • In applications with general load characteristics. ■ Tripping characteristics: BS EN 60898 type B:


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    PDF C60HB C60HC 110/240V, 50/60Hz, 240/415V, 50/60Hz. 25mm2, 35mm2. Circuit Breakers to BS EN 60898 2 pole mcb C60HD vigi C60 1 pole C60H RCBO mcb C60HB 3 pole vigi vigi C60H 3p 63a

    HGTG30N60C3D

    Abstract: IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060
    Text: HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


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    PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060

    Transient Voltage Suppressors 340 V

    Abstract: 170VDC
    Text: MFV- - - MUTIL-FUNCTION VARISTORS C SERIES RATINGS z Maximum allowable Voltage : 130Vac to 420Vac or 170Vdc to 560 Vdc z Rating current: 63A z Imax.: 50kA 8/20µs Peak Surge Current z Clamping Voltage : max. 1120V z Operating Temperature: -45°C to 85°C


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    PDF 130Vac 420Vac 170Vdc MFVC201 MFVC221 MFVC391 MFVC431 MFVC471 MFVC511 MFVC621 Transient Voltage Suppressors 340 V

    Merlin Gerin c60hd

    Abstract: Circuit Breakers to BS EN 60898 Merlin Gerin c60hb Merlin Gerin CIRCUIT BREAKER merlin gerin C60H merlin gerin C60H characteristics c60hc C60H dc 4P 63A MERLIN C60H 3p 63a
    Text: C60H Isobar 4 outgoers miniature circuit breakers 1 - 63A Installation • ■ ■ ■ In Merlin Gerin Isobar 4 distribution boards Symmetrical DIN rail Direct panel mounting Isobar 4 pan assemblies Technical data ■ 1, 2, 3 and 4 pole Type B Miniature circuit breakers


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    PDF 440Vac -300C Dime24880 C60HD C60HD Merlin Gerin c60hd Circuit Breakers to BS EN 60898 Merlin Gerin c60hb Merlin Gerin CIRCUIT BREAKER merlin gerin C60H merlin gerin C60H characteristics c60hc C60H dc 4P 63A MERLIN C60H 3p 63a

    g30n60c3d

    Abstract: TA49051 G30N60 HGTG30N60C3D 63a 216 LD26 RHRP3060 TA49053
    Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


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    PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d TA49051 G30N60 63a 216 LD26 RHRP3060 TA49053

    g30n60c3d

    Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
    Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


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    PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d G30N60 TA49053 TA49051 LD26 RHRP3060

    g30n60

    Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
    Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


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    PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60 g30n60c3d RHRP3060 TA49051 TA49053

    TA49053

    Abstract: g30n60c3d
    Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


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    PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC TA49053 g30n60c3d

    2xM20

    Abstract: 2CMA178728R1000
    Text: Surface socket-outlet IP67 Enclosure : Thermoplastic Cable entry for 16A knock-outs on top 2xM25,from bottom 2xM20 Cable entry for 32A knock-outs on top 2xM20,from bottom 2xM25 Cable area for 16A : 1.5 - 4.0 mm2 Cable area for 32A : 2.5 - 10 mm2 Cable area for 63A : 6.0 - 25 mm2


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    PDF 2xM25 2xM20 2xM20 2xM25 2CMA178728R1000 2CMA178727R1000 2CMA178731R1000 2CMA178740R1000 2CMA178728R1000

    G30N60C3

    Abstract: igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 TA49051
    Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC G30N60C3 igbt g30n60c3 LD26 RHRP3060 TA49051

    g30n60c3

    Abstract: TA49051 HGTG30N60C3 LD26 RHRP3060 g30n60
    Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC g30n60c3 TA49051 LD26 RHRP3060 g30n60

    ST3PA

    Abstract: st3pa-d HH52P LW5-16 K15555 AC33A IEC60947-6-1 LA38-11 ST3P three phase automatic changeover switch
    Text: Load-isolation Switch 1- Switch Disconnectors GL series load-isolation switch http://www.greegoo.com 1 GL-63A GL-100A GL-160A/3 GL-160A/4 GL-250A/3 GL-250A/4 GL-400A/3 GL-400A/4 GL-630A/3 GL-630A/4 GL-1000A/3 GL-1250A/3 GL-1250A/4 GL-1600A/3 GL-2500A/3 Greegoo Electric 7.2007


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    PDF GL-100A GL-160A/3 GL-160A/4 GL-250A/3 GL-250A/4 GL-400A/3 GL-400A/4 GL-630A/3 GL-630A/4 GL-1000A/3 ST3PA st3pa-d HH52P LW5-16 K15555 AC33A IEC60947-6-1 LA38-11 ST3P three phase automatic changeover switch

    RCCB 300MA

    Abstract: 480B rccb SS97 216B ELCB 263-B 240b Ce 263b
    Text: 2 and 4 pole residual current devices RCCBs/ELCBs Description to open a circuit automatically in the case of an earth leakage fault between phase and earth and / or neutral greater or equal to 10, 30, 100, 300 or 500mA; use in domestic, commercial and industrial installations.


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    PDF 500mA; 110/230V 50/60Hz 230/400V 0-100A 500mA 100mA RCCB 300MA 480B rccb SS97 216B ELCB 263-B 240b Ce 263b

    IC60N

    Abstract: IC60N C CURVE A9A26948 A9C30811 NG125L vigi C60 C60H VIGI IC60N c 6a TM 18311 DB4050
    Text: Applications Guide 1 Acti 9 Protection for specialised applications Acti 9 is Schneider Electric’s new core modular system In addition, we offer back-up tables providing quick, that makes your power distribution installation safer, at-a-glance overview of everything you need to know


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    PDF 202L5020 A9S60120 202L5532 A9S60432 202L5563 A9S60463 SE1042DK IC60N IC60N C CURVE A9A26948 A9C30811 NG125L vigi C60 C60H VIGI IC60N c 6a TM 18311 DB4050

    ELCB wiring diagram

    Abstract: IEC-947-2 IEC-898 EARTH LEAKAGE RELAY elcb 100mA 63A tripping curve of elcb bs 1361 ELCB CONNECTION DIAGRAM My 350 BS6651
    Text: Circuit protection devices MCBs, RCCBs, RCBO, ELR, surge arresters, fuse carriers, complete range of auxiliaries, busbars and connectors EA 2002/1 Welcome to the new edition of our general catalogue For easy reference purposes, Hager general catalogue is divided into three separate catalogues each representing


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    PDF U8/84 ELCB wiring diagram IEC-947-2 IEC-898 EARTH LEAKAGE RELAY elcb 100mA 63A tripping curve of elcb bs 1361 ELCB CONNECTION DIAGRAM My 350 BS6651

    100-A38

    Abstract: 100ADT6 100ADT6S 160ADT6 160ADT6S 200ADT6 200ADT6S 63ADT6 63ADT6S 63A45
    Text: ADT Series High Performance Filters for High Current Three Phase Applications ADT6 / ADT6S UL Recognized† ADT Series Specifications Designed with very high insertion loss for Delta applications, these three phase filters work well in industrial applications to bring high current motor drives


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    PDF 63ADT6S 100ADT6 100ADT6S 160/200ADT6 160/200ADT6S 63ADT6 160ADT6 200ADT6 100-A38 100ADT6 100ADT6S 160ADT6 160ADT6S 200ADT6 200ADT6S 63ADT6 63ADT6S 63A45

    merlin gerin multi 9 ihp 1c manual

    Abstract: NS800N telemecanique contactor catalogue schneider NS1250N merlin gerin multi 9 ihp 1c Merlin Gerin NS1250N merlin gerin multi 9 ihp 1c program timer NS1250n 29450 SCHNEIDER schneider pm710
    Text: Ready to install Distribution boards, DIN rail mounted equipment, enclosures and connection systems Contents Isobar 4 distribution boards and protective devices Section one 7 Modular control products Section two 31 Unit mounted residual current devices Section three


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    PDF 16kA11000 MGLV5750 merlin gerin multi 9 ihp 1c manual NS800N telemecanique contactor catalogue schneider NS1250N merlin gerin multi 9 ihp 1c Merlin Gerin NS1250N merlin gerin multi 9 ihp 1c program timer NS1250n 29450 SCHNEIDER schneider pm710

    G30N60

    Abstract: g30n60c3 TA49051 igbt g30n60c3 C110 HGTG30N60C3 LD26 U5025 40422
    Text: HGTG30N60C3 in t e r r ii J a n u a ry . D ata S h eet m i 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan
    PDF HGTG30N60C3 HGTG30N60C3 TA49051. O-247 G30N60 g30n60c3 TA49051 igbt g30n60c3 C110 LD26 U5025 40422

    g30n60c3d

    Abstract: G30N60 TA49014 TA49051 G30N60C TA49053 ic lg 631 LG 631 C110 HGTG30N60C3D
    Text: in t e HGTG30N60C3D r r ii J a n u a ry . m D ata S h eet 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    OCR Scan
    PDF HGTG30N60C3D HGTG30N60C3D TA49051. TA49053. TA49014. g30n60c3d G30N60 TA49014 TA49051 G30N60C TA49053 ic lg 631 LG 631 C110