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6139MO Datasheets Context Search

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Contextual Info: Ordering number: EN 2974A 2SA 1700 No.2974A J SAXYO = P N P E p ita x ia l P la n a r S ilicon T ra n s is to r High-Voltage Driver Applications i F eatures . H ig h b reak d o w n voltage • A doption of M B IT pro cess • E x c e lle n t hpE lin e a rity	OCR Scan	8219MO/6139MO 2974-l/3 2SA1700	PDF
pa 2030a Abstract: 2SC4498 LB 1001 SANYO 2SA1722 k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95 Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).	OCR Scan	2SA1722, 2SC4498 QQ073bb T-31-13 10ki2) 2SA1722/2SC4498-applied 2SA1722 pa 2030a 2SC4498 LB 1001 SANYO k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95	PDF
2SA1730 Abstract: EN3134 Contextual Info: Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.	Original	EN3134 2SA1730 2SA1730] 2SA1730 EN3134	PDF
2044B Abstract: 2SA1731 ITR04425 Contextual Info: Ordering number:ENN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.	Original	ENN3135A 2SA1731 2045B 2SA1731] 2044B 2044B 2SA1731 ITR04425	PDF
2SA1730 Abstract: ITR04415 ITR04416 ITR04418 Contextual Info: Ordering number:ENN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions unit:mm 2038A [2SA1730] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage.	Original	ENN3134 2SA1730 2SA1730] 25max 2SA1730 ITR04415 ITR04416 ITR04418	PDF
3135a Contextual Info: O rd e rin g n u m b e r : EN 3 1 3 5 A 2SA1731 No.3135A PN P Epitaxial P lan ar Silicon T ransistor High-Speed Switching Applications Features Package D im ensions 2045B unit: mm \|^_ :.5 so & 1 P ackage Dim ensions 2044B (unit : mm) H Ke 6.5 i r 0"5 5.	OCR Scan	2SA1731 --40V --500mA 8219MO/6139MO -20lB2 3135a	PDF
2044B Abstract: 2SA1700 Contextual Info: Ordering number : EN 2974A _2 S A 1 7 0 0 PNP Epitaxial Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A bsolute M axim um R atings at Ta = 25°C	OCR Scan	2SA1700 2044B 2SA1700	PDF
2SA1731 Contextual Info: SANYO SEMICONDUCTOR CÔRP SSE D 7 cH 7 0 7 b 0007CH1 2SA1731 1 T - 3 7 - I S PNP Epitaxial Planar Silicon Transistor 2044 High-Speed Switching Applications S3135A F e a tu re s • Adoption of FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage	OCR Scan	711707b 2SA1731 T-37-/5 S3135A	PDF
2SC4003 Abstract: bau 95 Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T c1707b 0CUJ7G34 0 2SC4003 7 -Z 9 - 23 NPN Triple Diffused Planar Silicon Transistor 2044 High-Voltage Driver Applications 2959A F e a tu re s . H igh breakdow n voltage • Adoption of MBIT process • Excellent hpE lin earity	OCR Scan	7cH707b 2SC4003 2SC4003 bau 95	PDF
Contextual Info: Ordering number:EN 2960 _2SC4002 J SAXYO N P N Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of M BIT process • Excellent hpE linearity A b s o lu t e M a x im u m R a tin g s a tTa = 25°C	OCR Scan	2SC4002 2SC4002 6139MO	PDF
2SA1730 Contextual Info: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.	Original	2SA1730 EN3134A 2SA1730	PDF
2SA1730 Contextual Info: O rd e rin g n u m b e r : E N 3 1 3 4 2 S A 1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage ■Fast switching speed	OCR Scan	EN3134 250mm2 2SA1730	PDF
2SC4002 Contextual Info: Ordering number: EN 2960 No.2960 _ 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity Absolute Maximum Ratings at Ta = 25°C	OCR Scan	2SC4002	PDF
2005A Abstract: 2SC4002 Contextual Info: Ordering num ber: EN 2 9 6 0 r. 2SC4002 No.2960 S AïYOi NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F e a tu re s . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A b so lu te M axim um R atin g s at Ta = 25°C	OCR Scan	2SC4002 2034/2034A SC-43 7tlt17D7b 2005A 2SC4002	PDF

2SA1700 Abstract: 2044B 29744 Contextual Info: Ordering number:EN2974A PNP Epitaxial Planar Silicon Transistor 2SA1700 High-Voltage Driver Applications Features • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2045B [2SA1700] 1 : Base 2 : Collector	Original	EN2974A 2SA1700 2045B 2SA1700] 2044B 2SA1700 2044B 29744	PDF
2SA1700 Abstract: 2044B ITR04202 Contextual Info: Ordering number:ENN2974A PNP Epitaxial Planar Silicon Transistors 2SA1700 High-Voltage Driver Applications Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2045B [2SA1700] 2.3 5.5 1.5 6.5 5.0 4	Original	ENN2974A 2SA1700 2045B 2SA1700] 2044B 2SA1700 2044B ITR04202	PDF