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    2SA1700 Search Results

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    2SA1700 Price and Stock

    3M Interconnect 1U30E-MB2-SA1-700

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30E-MB2-SA1-700 Bulk 25 1
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    3M Interconnect 1U30A-MB2-SA1-700

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30A-MB2-SA1-700 Bulk 22 1
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    3M Interconnect 1U30G-MB2-SA1-700

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30G-MB2-SA1-700 Bulk 8 1
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    Avnet Americas 1U30G-MB2-SA1-700 Bulk 19 Weeks, 1 Days 25
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    Rochester Electronics LLC 2SA1700E-E

    BIP PNP 0.2A 400V
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    DigiKey 2SA1700E-E Bulk 987
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    Rochester Electronics LLC 2SA1700E-TL-E

    BIP PNP 0.2A 400V
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    DigiKey 2SA1700E-TL-E Bulk 1,110
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    2SA1700 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1700 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Original PDF
    2SA1700 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1700 Unisonic Technologies HIGH VOLTAGE DRIVER APPLICATION Original PDF
    2SA1700 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1700 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1700 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1700 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1700 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1700 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SA1700D Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor, High Voltage Driver Apps Scan PDF
    2SA1700E Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor, High Voltage Driver Apps Scan PDF

    2SA1700 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1700 TRANSISTOR PNP TO-252 FEATURES z High Breakdown Voltage z Adoption of MBIT Process z Excellent hFE Linearity 1.BASE 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    PDF O-252 2SA1700 O-252 -300V -50mA -50mA -10mA -150V

    2SA1700

    Abstract: QW-R213-011
    Text: UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 TO-251 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage


    Original
    PDF 2SA1700 O-251 QW-R213-011 2SA1700

    2SA1700

    Abstract: 2044B ITR04202 ITR04203 ITR04204
    Text: 注文コード No. N 2 9 7 4 A 2SA1700 No. N2974A 20400 *半導体ニューズ 2974 とさしかえてください。 2SA1700 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高耐圧ドライバ用 ・高耐圧である。


    Original
    PDF 2SA1700 N2974A 2044B --150V 10IB1 --10IB2 ITR04206 ITR04207 2SA1700 2044B ITR04202 ITR04203 ITR04204

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR H I GH V OLT AGE DRI V ER APPLI CAT I ON ̈ FEAT U RES * High breakdown voltage. * Excellent hFE linearity. ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free 2SA1700L-x-TM3-T


    Original
    PDF 2SA1700 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T 2SA1700L-x-TN3-R 2SA1700G-x-TN3-R 2SA1700L-x-TN3-T 2SA1700G-x-TN3-T O-251 O-252

    2SA1700

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SA1700 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM : 1 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current : -200 mA ICM Collector-base voltage V V(BR)CBO : -400


    Original
    PDF O-251 2SA1700 O-251 -300V, -50mA -50mA, -10mA 2SA1700

    2SA1700

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SA1700 TRANSISTOR PNP TO-251 TO-252-2L FEATURES z High breakdown voltage z Adoption of MBIT process z Excellent hFE linearity 123 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original
    PDF O-251/TO-252-2L 2SA1700 O-251 O-252-2L -300V -50mA -50mA -10mA -150V 2SA1700

    RB200

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION „ FEATURES * High breakdown voltage. * Excellent hFE linearity. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T


    Original
    PDF 2SA1700 O-251 O-252 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T 2SA1700L-x-TN3-R 2SA1700G-x-TN3-R 2SA1700L-x-TN3-T 2SA1700G-x-TN3-T RB200

    2SA1700

    Abstract: TRANSISTOR A30
    Text: UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 TO-252 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage


    Original
    PDF 2SA1700 O-252 QW-R209-009 2SA1700 TRANSISTOR A30

    TRANSISTOR A30

    Abstract: 2SA1700 c2535 B1032
    Text: UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 TO-252 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage


    Original
    PDF 2SA1700 O-252 100ms QW-R209-009 TRANSISTOR A30 2SA1700 c2535 B1032

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SA1700 TO-251 TRANSISTOR PNP FEATURES Power dissipation PCM 1. BASE : 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400


    Original
    PDF O-251 2SA1700 O-251 -300V, -50mA -50mA, -10mA

    2SA1700

    Abstract: No abstract text available
    Text: 2SA1700 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original
    PDF 2SA1700 O-251/TO-252-2L O-251 O-252-2L -300V -50mA -10mA -150V

    2SA1700

    Abstract: No abstract text available
    Text: 2SA1700 2SA1700 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM : 1 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -200 mA Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original
    PDF 2SA1700 O-251 -300V, -50mA -50mA, -10mA 2SA1700

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 TO-251 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage


    Original
    PDF 2SA1700 O-251 100ms QW-R213-011

    2SA1700

    Abstract: 2044B 29744
    Text: Ordering number:EN2974A PNP Epitaxial Planar Silicon Transistor 2SA1700 High-Voltage Driver Applications Features • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2045B [2SA1700] 1 : Base 2 : Collector


    Original
    PDF EN2974A 2SA1700 2045B 2SA1700] 2044B 2SA1700 2044B 29744

    2SA1700

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 2SA1700 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM : 1 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current : -200 mA ICM Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range


    Original
    PDF O-251 2SA1700 O-251 -300V, -50mA -50mA, -10mA 2SA1700

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original
    PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original
    PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2974A 2SA 1700 No.2974A J SAXYO = P N P E p ita x ia l P la n a r S ilicon T ra n s is to r High-Voltage Driver Applications i F eatures . H ig h b reak d o w n voltage • A doption of M B IT pro cess • E x c e lle n t hpE lin e a rity


    OCR Scan
    PDF 8219MO/6139MO 2974-l/3 2SA1700

    2SD1300

    Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
    Text: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.


    OCR Scan
    PDF O-126 T0-220AB 2SA164830 2SC4734 2SA1749 2SC4564 min2000 min4000 2SD894 2SD1153 2SD1300 transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205

    2SB816

    Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
    Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3


    OCR Scan
    PDF 2SA1253 2SB849 2SB775 2SA1264 2SB965 2SB1371 2SA1264 2SB1372 2SB816 2SA1265 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416

    2sb892

    Abstract: 2sc4645 2sC4389 2SB1406
    Text: SASYO NMP New MPJTransistor Series * Small-sized package containing the same chip that has been so far placed in * Small-sized package making it possible to make application setssmaller and * Can meet tape-used automatic mounting requirements. * Full line-up of products for wide application.


    OCR Scan
    PDF 2SA1701 2SC4481 2SA1702* 2SC4482 2SA1703 2SC4483 2SA1704* 2SC4484* 2SC4485* 2SA1706* 2sb892 2sc4645 2sC4389 2SB1406

    2044B

    Abstract: 2SA1700
    Text: Ordering number : EN 2974A _2 S A 1 7 0 0 PNP Epitaxial Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A bsolute M axim um R atings at Ta = 25°C


    OCR Scan
    PDF 2SA1700 2044B 2SA1700

    2SA1301 TOSHIBA

    Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
    Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207


    OCR Scan
    PDF 2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266