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Schneider Electric 9001KN260WP PUSH BUTTON LEGEND PLATE 30MM T-
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	9001KN260WP	Box	10		1	1 $7.52 10 $6.773 100 $6.773 1000 $6.773 10000 $6.773	Buy Now
Mouser Electronics	9001KN260WP					1 $7.49 10 $6.77 100 $6.72 1000 $6.7 10000 $6.7	Get Quote
Schneider Electric 9001KN160WP PUSH BUTTON LEGEND PLATE 30MM T-
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	9001KN160WP	Box			1	1 $8.17 10 $8.17 100 $8.17 1000 $8.17 10000 $8.17	Buy Now
Mouser Electronics	9001KN160WP					1 $8.16 10 $7.98 100 $7.22 1000 $6.5 10000 $6.5	Get Quote
Tripp Lite B125-101-60-WP HDMI EXTDR WALLPLATE KIT 125FT
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DigiKey	B125-101-60-WP	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	B125-101-60-WP	Bulk		8 Weeks	20	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Beyschlag HPZ060WP20238AX1 CAP CER 2000PF 20KV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HPZ060WP20238AX1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Integrated Silicon Solution Inc IS71LD32160WP128-25BPLI IC FLASH RAM 128MBIT PAR 168BGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IS71LD32160WP128-25BPLI	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IS71LD32160WP128-25BPLI					1 - 10 - 100 - 1000 - 10000 -	Get Quote

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60WP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC2290 Abstract: 2SC2290A Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)	Original	PDF	2SC2290A 30MHz 28MHz 60WPEP -30dB 2SC2290 2SC2290A
2SC2290 Abstract: TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp Text: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.)	Original	PDF	2SC2290 30MHz 28MHz 60WPEP -30dB 001MHz 000MHz, 2SC2290 TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp
2sc2290 Abstract: No abstract text available Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)	Original	PDF	2SC2290A 30MHz 28MHz 60WPEP -30dB 2-13B1A 2sc2290
2SC2290 equivalent Abstract: 2SC2290A 2SC2290 60WPEP Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)	Original	PDF	2SC2290A 30MHz 28MHz 60WPEP -30dB 2SC2290 equivalent 2SC2290A 2SC2290 60WPEP
2SC2290 Abstract: TRANSISTOR 2sC2290 Linear IC Guide 2-13B1A 2SC22 Text: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)	Original	PDF	2SC2290 30MHz 28MHz 60WPEP -30dB 001MHz 000MHz, 2SC2290 TRANSISTOR 2sC2290 Linear IC Guide 2-13B1A 2SC22
300 watt hf transistor 12 volt Abstract: arco 467 sd1405 150 watt hf transistor 12 volt arco 465 60WP 100 watt hf transistor 12 volt arco 463 Text: SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS COMMON EMITTER IMD −32 dB GOLD METALLIZATION P OUT = 75 W MIN. WITH 13 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1405 BRANDING SD1405 PIN CONNECTION DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon	Original	PDF	SD1405 SD1405 300 watt hf transistor 12 volt arco 467 150 watt hf transistor 12 volt arco 465 60WP 100 watt hf transistor 12 volt arco 463
POWER 28V 3A 60W Abstract: 0809LD60 200 watt hf mosfet Text: R.0.2P.991602-BEHRE 0809LD60 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QT Common Source The 0809LD60 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The	Original	PDF	991602-BEHRE 0809LD60 0809LD60 900MHz, 60WPEP, POWER 28V 3A 60W 200 watt hf mosfet
FUJITSU MICROWAVE TRANSISTOR Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band	Original	PDF	FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
POWER 28V 3A 60W Abstract: 0809LD60P 200 watt hf mosfet mosfet ghz Text: R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QU Common Source The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The	Original	PDF	991602-BEHRE 0809LD60P 0809LD60P 900MHz, 60WPEP, POWER 28V 3A 60W 200 watt hf mosfet mosfet ghz
HJM280M-24 Abstract: HJM075M-12 HJM025M-12 210WP HJM260M-24 solar panel circuit HJM205P-18 HJM180M-24 MM 1646 solar panel Text: Mono & Poly Solar panel specification mono solar panel（125mmx125mm ） Module Type HJM025M-12 HJM030M-12 HJM035M-12 HJM040M-12 HJM045M-12 HJM075M-12 HJM080M-12 HJM085M-12 HJM160M-24 HJM165M-24 HJM170M-24 HJM175M-24 HJM180M-24 Power Rating Wp 25Wp 30Wp	Original	PDF	panel125mm 125mm HJM025M-12 HJM030M-12 HJM035M-12 HJM040M-12 HJM045M-12 HJM075M-12 HJM080M-12 HJM085M-12 HJM280M-24 HJM075M-12 HJM025M-12 210WP HJM260M-24 solar panel circuit HJM205P-18 HJM180M-24 MM 1646 solar panel
An Introduction to Broadband Impedance Transformation for RF Power Amplifiers Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors Text: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T	Original	PDF	AN-721, An Introduction to Broadband Impedance Transformation for RF Power Amplifiers transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors
2SC2290 Abstract: 12ID 2SC2290 equivalent Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain Gp = 11.8dB (Min.)	OCR Scan	PDF	2SC2290 30MHz 28MHz 60Wpep 000MHz 001MHz 961001EAA2' 2SC2290 12ID 2SC2290 equivalent
2SC2290 Abstract: 2SC2290 equivalent Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 ~3 0MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power PO=60WPEP Minimum Gain Gpe=ll.8dB Efficiency nc=35/¡ (Min.) IMD=-30dB(Max.)	OCR Scan	PDF	2SC2290 28MHz 60WPEP -30dB Iidle-50mA, 60WpEP 150pF 200pF 2SC2290 2SC2290 equivalent
2-13B1A Abstract: Transistor S5B 2SC2290 equivalent 2sc2290 Text: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)	OCR Scan	PDF	2SC2290 28MHz 60WpEP --30dB 961001EAA2' 2-13B1A Transistor S5B 2SC2290 equivalent 2sc2290

60WpEp Abstract: 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290 Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • • V / / / A Xr i X > T \ X * IA c A X . \ < ' X "H 02 ^ x ^ = r) Q = 'V i S b % — MAXIMUM RATINGS (Tc 25°C)	OCR Scan	PDF	2SC2290 30MHz 28MHz 60Wpep -30dB 961001EAA2' 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290
SD1405 Abstract: No abstract text available Text: S G S -T K O M S O N SD1405 \u RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ . ■ ■ 30 MHz 12.5 VOLTS COMMON EMITTER IMD -3 2 dB GOLD METALLIZATION ■ P out = 75 W MIN. WITH 13 dB GAIN DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon	OCR Scan	PDF	SD1405 SD1405 GD7D42S