60V N-CHANNEL ENHANCEMENT MODE MOSFET - ESD PROTECTED Search Results

mosfet motor dc 48v

Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496
Contextual Info: RF1K49154 S E M I C O N D U C T O R 2A, 60V, ESD Rated, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2A, 60V The RF1K49154 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

CMPDM7002AE

Abstract: PB CMPDM7002AE 2N7002 60V SOT-23
Contextual Info: Product Brief CMPDM7002AE 60V, 300mA N-Channel MOSFET in SOT-23 package SOT-23 Typical Electrical Characteristics Central Semiconductor’s CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-channel MOSFET designed for high speed pulsed amplifier and driver

p30N06LE

Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0
Contextual Info: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN

Contextual Info: HIP0061 S e m iconductor 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transis­

AN8610

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET KAPPA RELAY HIP0061 HIP0061AS1 HIP0061AS2 MO-169AC relay spice model
Contextual Info: HIP0061 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The

KAPPA RELAY

Abstract: AN8610 HIP0061 HIP0061AS1 HIP0061AS2 6v ls1 relay
Contextual Info: HIP0061 TM 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The

f3055l

Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
Contextual Info: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN

6v ls1 relay

Contextual Info: HIP0061 S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The

6v ls1 relay

Abstract: AN8610 HIP0061 HIP0061AS1 HIP0061AS2 MO-169AC mosfet array vgs 5v 2A BSC 75N AN-8610
Contextual Info: HIP0061 S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array June 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

K2765

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

sot-363 n-channel mosfet

Abstract: K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363
Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

Contextual Info: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@200mA=4 0.0 44(1.10) 0.0 35(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) 0.009(0.23) • RDS(ON), VGS@10V,IDS@500mA=3 • Advanced Trench Process Technology

Contextual Info: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@200mA=4 • Advanced Trench Process Technology 0.0 44(1.10) 0.0 35(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) 0.009(0.23) • RDS(ON), VGS@10V,IDS@500mA=3

Contextual Info: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected 0.044 1.10 0.035(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.009(0.23) SOT-523 FEATURES • Advanced Trench Process Technology

K27 SOT-363 MARKING

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20) 0.078(2.00)

Contextual Info: 2N7002K 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-23 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns

2n7002kdW

Contextual Info: 2N7002KDW 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-363 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns

k72 diode

Abstract: 2N7002KW K723
Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

k72 wn

Abstract: k72 diode 2N7002KW
Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

K72 marking diode

Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

Contextual Info: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω

K27 mOSFET

Abstract: MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected
Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 • RDS ON , VGS@10V,IDS@500mA=3Ω Unit: inch (mm) 0.054(1.35) 0.045(1.15) • High Density Cell Design For Ultra Low On-Resistance 0.030(0.75) 0.021(0.55) 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology

2N7002K

Contextual Info: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition