60n6
Abstract: 60N60 IC tl 072 IC100 60N60U1
Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600
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60N60U1
ISOPLUS247TM
IC100
60n6
60N60
IC tl 072
IC100
60N60U1
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MOSFET 60n60
Abstract: 60N60 transistor 60N60 TAB 429 H
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR
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60N60
OT-227
E153432
MOSFET 60n60
transistor 60N60
TAB 429 H
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PDF
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60N60C2
Abstract: ixgh60n60c2
Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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60N60C2
IC110
O-247
O-268
728B1
123B1
728B1
065B1
60N60C2
ixgh60n60c2
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PDF
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IXGN60N60C2
Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A
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60N60C2
IXGN60N60C2D1
OT-227B,
IC110
2x61-06A
IXGN60N60C2
60N60C2
60N60C2D1
ixgn60N60
IGBT 60N60C2D1
siemens igbt
siemens igbt 75a
high current igbt
60N60C2D
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Untitled
Abstract: No abstract text available
Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600
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60N60B2D1
IC110
O-264
PLUS247
2x61-06A
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PDF
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siemens igbt 75a
Abstract: PLUS247
Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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60N60C2D1
IC110
2x61-06A
siemens igbt 75a
PLUS247
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PDF
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IXGR60N60C2
Abstract: No abstract text available
Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings
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ISOPLUS247TM
60N60C2
60N60C2D1
IC110
IF110
IXGR60N60C2D1)
ISOPLUS247
2x61-06A
IXGR60N60C2
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IXFN 60N60 HiPerFET Power MOSFETs Single Die M OSFET VDSS ^D25 D DS on = 600 V = 60 A = 75 mQ N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test C onditions V DSS Td = 25°C to 150°C
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60N60
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PDF
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60-06A
Abstract: 60N60C2D1 60N60C2D IF110 PLUS247
Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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60N60C2D1
IC110
IF110
O-264
0-06A
60-06A
60N60C2D
IF110
PLUS247
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PDF
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60N60C2
Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1
Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings
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ISOPLUS247TM
60N60C2
60N60C2D1
IC110
IF110
IXGR60N60C2D1)
2x61-06A
60N60C2
gr60n60
IXGR60N60C2D1
siemens igbt 75a
60N60C2 DI
GR60N60C2
60N60
ISOPLUS247
IF110
GR60N60C2D1
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PDF
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3580J
Abstract: No abstract text available
Text: Ultra-Low VCE sat IGBT ixg n 60N60 VCES ^C 25 VCE(sat) u Ë oE Test Conditions V «s T, = 25”C to 150°C 600 VcOR ^ 600 V v GES v GEM Continuous ±20 V Transient ±30 V 'c 2 5 Tc =25«C 100 A Tc = 90°C 60 A 200 A l CM = 1 0 0 e 0.8 v CES A 'c 9 0 Maximum Ratings
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60N60
OT-227B,
IXGN6QN60
3580J
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PDF
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60N60
Abstract: No abstract text available
Text: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous
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OCR Scan
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60N60
60N60
O-247
O-268
O-264
1999IXYS
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PDF
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60n60 igbt
Abstract: ic 307 ex 60N60
Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient
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60N60
OT-227B
60n60 igbt
ic 307 ex
60N60
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IXGH50N60BD1-P1
Abstract: ISOPLUS247TM 60N60U1
Text: Advanced Technical Information IXGR 60N60U1 Low VCE sat IGBT with Diode ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
60N60U1
IC100
50/60Hz,
IXGH50N60BD1-P1
IXGH50N60BD1-P1
ISOPLUS247TM
60N60U1
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ixgn60n60
Abstract: No abstract text available
Text: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous
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OCR Scan
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60N60
OT-227BminiBLOC
ixgn60n60
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C
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ISOPLUS247TM
60N60B2
60N60B2D1
PLUS247
E153432
IC110
2x61-06A
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PDF
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60N60C2D1
Abstract: No abstract text available
Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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60N60C2D1
IC110
O-264
IF110
PLUS247
0-06A
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PDF
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MOSFET 60n60
Abstract: 60N60 IXFL60N60 Z 728
Text: HiPerFETTM Power MOSFETs IXFL 60N60 VDSS ISOPLUS264TM = 600 V = 60 A Ω = 80 mΩ ID25 Electrically Isolated Backside RDS(on) Single Die MOSFET Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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60N60
ISOPLUS264TM
728B1
123B1
728B1
065B1
MOSFET 60n60
IXFL60N60
Z 728
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PDF
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60n60b
Abstract: PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A
Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C
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ISOPLUS247TM
60N60B2
60N60B2D1
IC110
2x61-06A
60n60b
PLUS247
IXGR60N60B2
SiEMENS 3 leads EC 350
2x61-06A
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PDF
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60N60B2D1
Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1
Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600
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60N60B2D1
IC110
2x61-06A
ixgk60n60b2d1
PLUS247
ixgx60n60b2d1
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PDF
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60N60
Abstract: G 60N60
Text: ID1XYS Ultra-Low VCE sat IGBT IXGH 60N60 v v CES ^C25 Symbol Test Conditions Maximum Ratings v*C E S v CGR Tj = 25°C to 150°C 600 V ^ = 25DC to 150°C; RGE = 1 M£2 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C, limited by leads 75
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60N60
O-247
60N60
G 60N60
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PDF
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ixgh 1500
Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•
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OCR Scan
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
32N60BS
40N60A
ixgh 1500
25N120
200n60
60n60 igbt smd
10N60A
30N60A
.25N100
20n60a
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PDF
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MOSFET 60n60
Abstract: IXFN SOT227
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR
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60N60
OT-227
E153432
MOSFET 60n60
IXFN SOT227
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PDF
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600
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60N60U1
ISOPLUS247TM
IC100
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PDF
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