60MADC Search Results

Contextual Info: LED-CONVERTER UNIT PS-LD0301-020-B S (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED converter is developed for max. 3 LED-lines Optimized for Sharp: LQ121S1LG62 APPLICABLE: 1~3 LED lines (Serial Mode) Pout max. 7W LED Voltage max. 25Vdc Lamp Current max. 60mAdc

TMT30077CT

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 6-3 :(5-4):(2-7)=1:1:1.25±3% Inductance: L5-3 (6,4 connected) 14.5mH±10% @1kHz,0.1V,60mAdc DC Resistance: @25ºC (2-7) 2.0 Ohms Max (5-3)(6,4 connected) 2.2 Ohms Max Leakage Inductance: L5-3(6,4 connected,2-7short) 55uH Max @100kHz,0.1V

Contextual Info: LED-CONVERTER UNIT PS-LD0301-028-B S (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED converter is developed for max. 3 LED-lines Optimized for Sharp: LQ070Y3LG1C APPLICABLE: 2 LED lines (Serial Mode) Pout max. 7W LED Voltage max. 25Vdc Lamp Current max. 60mAdc

Contextual Info: 6C 5V 767m ADC SCHOTTKY .0 7 0 (1 0 ) [1.78] <1) J+ •w PRI 1 6 - 40V 4 0 k - 1QQkHz .1 4 8 (8 ) [3.75] 24V 1 60mADC SEC FAST RECOVERY ~y .828 [21 .03] □ □ □ .05 8 (1 0 ) [1 -47] □ .0 3 9 (1 0 ) y [.99] ^1 ) Ao) 24V 1 60mADC FAST RECOVERY □ .1 2 4 (1 0 )

SK70720

Abstract: SK70721
Contextual Info: HDSL Transformer DESIGNED DOR USE WITH LEVEL ONE HDSL 1C D.C. RESISTANCE 4-2 = 6-7 = 2 .3 5 OHMS ± 10% @ 20"C 2.10 OHMS ± 10% 9 - 1 0 = 2.10 OHMo^ INDUCTANCE : 3 .6 0 mH + 10% ± 10% @ 1KHz, 1.0 VAC, 0 / 1 60mADC, 4 - 2 , Ds LEAKAGE INDUCTANCE : 17.5/iH MAX. 10OKHz , lO O m A A C , 4 —2 TIE 6 + 10 , 7 + 9 Ls.

Contextual Info: LED-CONVERTER UNIT PS-LD0401-081 S (22W) (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED converter is developed for 2 LED-lines. Optimized for Mitsubishi: AA084VG01 / AA084XB01 APPLICABLE: 2 LED lines LED Voltage max. 48Vdc Lamp Current per line: typ. 60mAdc

PI122868

Contextual Info: PI122868 Transformer for ISDN U Interface Feature ♦ Operating temperature range: 00C to +700C ♦Idc: 60mA Specifications @ 250C Parameter Turn Ratio Condition Min. Typ. Max. Unit Pin 5-8 : (2-11) : (7-6) 0.8 : 1 : 0.8 ±2% @10KHz,100mV with 60mADC Pin(8-6) tie(5+7)

208H

Contextual Info: 2 .S c h e m a tic : 1. D im e n s io n a : Line Chip XF1313 -13H D S YYWW . \ ] ITT ] \ -8 - Dot Pin# Front view E 0 .098 Typ 0.030 Typ 6 10 3 .E l e c t r i c a l S p e c i f i c a t i o n s : 25°C 0.4-90 Max rl PIN 1 — 5 OCL: 2.0m H ±10% <910KHz 0.1V

1N4532

Abstract: 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 1N643 1N662
Contextual Info: 1N643; JAN 1N643 1N662; JAN 1N662 1N663; JAN 1N663 COMPUTER DIODE Switching FEATU RES DESCRIPTION • M etallurgical Bond T h is device is particularly suited to a pp licatio ns where m ediu m speed sw itching is required. M oisture free stability is ensured through herm etic

750510041

Abstract: 75051 750510
Contextual Info: C U ST O M ER TERMINAL RoH S LE A D P b — FR EE Sn96% , A g4% Ye s Ye s r 7 f— p|lGn) fc O w E -M ID C O M PART MUST INSERT FULLY TO SURFACE A IN RECOMMENDED GRID .021 SQ.(10) [.53] .100/.130 * [2.54/3.30] ELECTRICAL SPECIFICATIONS <D 25°C u n less otherw ise noted:

Contextual Info: TITLE TRANSFORMER HDSL 160 kB, 8 mH 1 : 1 SCHOTT 1000 PARKERS LAKE ROAD CORPORATION WAYZATA, MN 55391 SPECIFICATIONS 6. RETURN LOSS: 1-2-3-4 Ref 135 ohms 5-8 loaded 32 ohms @ 10-25 Khz > 20 dB 20 dB/DECADE ABOVE AND BELOW 1 END SCHOTT 29872 YYWW .780 MAX

Contextual Info: 5 0 0 MAX. [1 2 .7 0 ] . 6 9 9 MAX. [1 7 .7 5 ] tn . 5 3 0 MAX. [13 .4 6 ] DOT LOCATES TERM. £ ° 1— CD < CD 2 o u o in 2 n 1 1 1 L 1 L l\ J \ #1 LOT CODE & DATE CODE C A A AREA REPRESENTS TERMINAL PAD DIMENSIONS G> .0 3 4 9 "T PRI (Line) & CD- [.8 6 ]

xl 1507

Abstract: IN270 1N270 JAN part marking lvb diode germanium 1n270 GE 141L gold bonded germanium diode 1N270 1N270 diode equivalent xl 4016 1N270
Contextual Info: ., i_ I TNcR=mml MI L-S- 195001200B 9 JUNE 1989 u lNG MIL-s-19500/2ooA 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR OEVICE, OIOOE, GERMANIUM TYPE 1N270 JAN, JANTX, ANO JANTXV This specification is ments and Agencies 1. approved of the for use by all DepartDepartment

Contextual Info: 1. Mechanical Dimensions: 0.490 Max 1— 0.030 0.098 D u ho ± 0 .0 0 5 _BJL T XFMRS iO r- o 2. Schematic: c B L ine S id e o o YYWW • o .o o s— i Min F yyuuy 5 A 1 0,530 Max 4 -0 Sense Tape Winding Electrical Specifications: @25°C -0 .0 2 0 ± 0.005

Contextual Info: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max

2N3700UB

Abstract: 2N3700 2n3019 equivalent 000-inch 2N3700 JAN 2N3019 2N3019S 2N3057A to-206aa
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR

NTE454

Abstract: 200MHZ VG15
Contextual Info: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max

MC145572

Abstract: PI122608 60mAdc
Contextual Info: YCL PI122608 Transformer for ISDN U Interface Feature • Designed to used to MOTORLA MC145572 • Transformer models with 1500Vrms isolation . chip. Specification Parameters Condition Min. Typ Max. Unit 26.25 mH Turn ratio line : (device) Pin(1-11) : (7-5) tie pin(12-2)

165BSC

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BU323 Features • • • Designed for automotive ignition, switching regulator and motor control applications. With TO-3 package Photoglass passivation for reliability and stability

u 6204

Abstract: MC145572
Contextual Info: defining a degree of excellence ISDN “U” INTERFACE TRANSFORMERS 0559-6204-00 and 0559-6204-01 TM0035 Bel introduces a new ISDN “U” Interface transformer. The transformer is designed to be used with the Motorola ISDN "U" Interface Chip MC145572. * Dielectric Strength - 1500 Vrms measured Primary to

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR

2n3019 equivalent

Abstract: 2N3019S
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR

750510

Contextual Info: C U ST O M ER TERMINAL RoH S LE A D P b — FR EE Sn96% , A g4% Ye s Ye s P C 1“ k O w E - M ID C O M ELECTRICAL SPECIFICATIONS 25°C u n less otherw ise noted: TEST CONDITIONS VALUE D.C. RESISTANCE PARAMETER 1 -4 @20”C 5.05 ohms ±10% D.C. RESISTANCE

Contextual Info: Sn63%, Pb37% Sn96X, Ag4% LF1 = 15 I No Yes No Yes WURTH ELEKTRO N IK * DIMENSION MAY BE EXCEEDED WITH SOLDER ONLY MAX.* .500 MAX. —- .400 [10.16] [12.70] 41 - — □ “HZ .400 MAX. [10.16] if if PRI Line g> (D- 2o o Q 1 r* TERM. NO.’s FOR REF. ONLY