600MILS Search Results

TLA08AAA

Contextual Info: LM4889 LM4889 1 Watt Audio Power Amplifier Literature Number: SNAS157G LM4889 1 Watt Audio Power Amplifier General Description Key Specifications The LM4889 is an audio power amplifier primarily designed for demanding applications in mobile phones and other

CMR3000-D01

Abstract: CMR3000 CMR3100-D01 SPEC-0000096 CMR3000D01 CMR3100-D0X
Contextual Info: Doc.Nr. SPEC-0000096.04 Specification CMR3000-D0X PWB CMR3100-D0X PWB CMR3000-D0X PWB and CMR3100-D0X PWB Specification 1 Introduction The purpose of evaluation PWBs is to enable fast prototyping. This document is applicable following evaluation PWBs: • CMR3000-D0X PWB

intel 915 MOTHERBOARD pcb CIRCUIT diagram

Abstract: B1370 PC MOTHERBOARD intel 915 circuit diagram intel 915 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 845 crb B1370 transistor b1370 e PCI x1 express PCB dimensions artwork
Contextual Info: Intel 80332 I/O Processor Design Guide November 2004 Order Number: 273824 Revision: 002US November 2004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN

LM4889

Abstract: LM4889ITL LM4889ITLX LM4889LD LM4889MA LM4889MM M08A MUA08A TLA08AAA marking code CB SMD ic
Contextual Info: LM4889 1 Watt Audio Power Amplifier General Description Key Specifications The LM4889 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1 watt of continuous average power to an 8Ω BTL

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC521OOOP/J 1MBit 256K X 4 Field Memory PRELIMINARY DESCRIPTION The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K

Contextual Info: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby

PWB 04

Abstract: SCA3000 VTI Technologies
Contextual Info: Doc.Nr. 8258600A.06 SCA3000 PWB Specification SCA3000 PWB Specification 1 Introduction The purpose of SCA3000 PWB is to enable fast prototyping. SCA3000 PWB includes • SCA3000 sensor soldered on PWB • PWB version B: design # VTI29394B0 with pin headers

Contextual Info: LM4889 1 Watt Audio Power Amplifier General Description Key Specifications The LM4889 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1 watt of continuous average power to an 8Ω BTL

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

5962-8961420

Abstract: as27c010 5962-8961420QXA
Contextual Info: UVEPROM SMJ27C010A AS27C010A Austin Semiconductor, Inc. 1 MEG UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS V PP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND

marking code EA SMD 5 pins

Abstract: parallel to ASI
Contextual Info: UVEPROM AS27C256A Austin Semiconductor, Inc. 256K CMOS UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS z z z VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND -55C to 125C operation

7085NS

Abstract: 88128 5962-89598 EDI88128C EDI88128LP EDI88130 EDI88130C EDI88130LP
Contextual Info: White Electronic Designs EDI88128C 128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. FEATURES Access Times of 70, 85, 100ns The device is also available as EDI88130C with an

EDI88257CA

Abstract: EDI88512CA
Contextual Info: EDI88257CA White Electronic Designs 256Kx8 Monolithic SRAM FEATURES The EDI88257CA is a 2 Megabit 256Kx8 bit Monolithic CMOS Static RAM. „ Access Times of 20, 25, 35, 45, 55ns „ Data Retention Function LPA Versions „ TTL Compatible Inputs and Outputs

5962-8606301XA

Abstract: SMJ27C256-25JM 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256 SMJ27C256-30JM
Contextual Info: UVEPR OM UVEPROM SMJ27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063

XCS200 FPGA

Abstract: atx 400w power supply circuit schematic ic 931 SMSC SCH5027 88E1145 schematics SCH5027 XCS200 American Megatrends 2.51 BIOS intel Development Kit 815 EP80579
Contextual Info: Intel EP80579 Integrated Processor Product Line Platform Design Guide May 2010 Order Number: 320068-005US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS

kb3926

Abstract: kb3926 d3 MAX8774 MCP67D Maxim MAX8774 kb3920 short stop 12v p18 30a kb3926 d2 ac30 c51 100v 10p quanta at1
Contextual Info: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2

RTM880N-796

Abstract: RTL8111DL KB3926 RTS5159 G786P8 RTL8103E 8111DL 966a quanta ut12 kb3926 d2
Contextual Info: 1 2 3 A 1 2 3 4 5 6 : : : : : : 5 6 7 8 UT12 UMA SYSTEM DIAGRAM PCB STACK UP LAYER LAYER LAYER LAYER LAYER LAYER 4 TOP IN1 IN2 VCC IN3 BOT DDRII DDRII-SODIMM1 667/800 MHz AMD Lion Sabie Griffin PAGE 6,7 DDRII DDRII-SODIMM2 01 CPU THERMAL SENSOR S1G2 Processor

max8770

Abstract: bpm t105 ICS9LPRS355AGLFT G545B1 ac41 cn19 100v 1p0 quanta h48 diode zener Zener diode H48 quanta computer MMBS3904
Contextual Info: 1 2 3 4 5 7 8 LE5 BLOCK DIAGRAM module PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 A 6 CPU THERMAL SENSOR CPU Merom LAYER 3 : IN1 LAYER 4 : SVCC 14.318MHz A PAG 5 478P (uPGA)/35W PAG 3,4 LAYER 5 : IN2 01 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK#

cx20561-12z

Abstract: IT8502 IT8502E fds8884 8502E CX20561 RT8204 ISL6251 ALPRS355B R5538
Contextual Info: 1 2 3 4 5 7 8 LE6 BLOCK DIAGRAM PCB STACK UP 6L LAYER 1 : TOP LAYER 3 : IN1 01 CPU THERMAL SENSOR CPU Penryn LAYER 2 : GND A 6 14.318MHz PAGE 6 478P uPGA /35W PAGE 4,5 LAYER 4 : IN2 A CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 5 : VCC

L50RI0

Abstract: ASP-68200-07 SP8K10SFD5 ATI SB460 ITE it8510e 2N3904 h23 ICS951462AGLF OZ818 Z0920 2N3904 e23
Contextual Info: 5 D C 3 2 1 L50RI0 REV:A L50RI0 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 4 M/B PCB P/N:xxxxxxxxx COVER PAGE GPIO DEFINITION & Sequence BLOCK DIAGRAM CPU HT INTERFACE CPU DDR II INTERFACE CPU POWER / GND

kb3926

Abstract: RTM875T-606 RTM875 G3-64 820p fcbga G966-25 cntr cd1 100 1p0 Quanta AT3 at3 block diagram KB3920 KB3926 AT5 C833
Contextual Info: 1 2 PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 A 3 04-06-08-12-F- 4 0402 footprint 0603 footprint 0805 footprint 1206 footprint 1% tolerance 5 6 7 8 AT3 BLOCK DIAGRAM CPU THERMAL SENSOR CPU Merom LAYER 3 : IN1 01 14.318MHz A PAG 5 LAYER 4 : IN2 478P uPGA /35W

c5129

Abstract: C5149 C5148 88E8001 CPUTEST29H D4203 D4004 u6202 R6130 R6503
Contextual Info: 5 4 3 2 A6M 1 REVISION: 2.0 128-BIT AMD S1g1 D Unbuffer DDR2 SO-DIMM Channel A/B x16 HyperTransport 200/400/800 MHz 638 PIN PACKAGE LVDS nVIDIA Gigabit Ethernet RTL8111B PCI-E x1 CRT C51MV C TV OUT X8 /X4 HyperTransport 200/400/800 MHz BGA 468 PCMCIA 33MHz

G545A1

Abstract: KB926 SLG8SP556V DTA144EUA_SC70-3 AS0A626 OZ129TN FBMA-L11-201209-221LMA30T SILEGO q27b AS0A626-U2 si7686
Contextual Info: A B C D E 1 1 JITR1/R2_DDR3 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 Friday, April 18, 2008 REV:1.0 4 4 Compal Secret Data Security Classification 2007/10/15 Issued Date 2008/10/15 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

5962-8764802XA

Abstract: 5962-8764803XA 5962-8764801XA SMJ27C512 SMJ27C512-15JM SMJ27C512-20JM SMJ27C512-25JM 59628764801XA
Contextual Info: UVEPROM SMJ27C512 Austin Semiconductor, Inc. 512K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY SPECIFICATIONS A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-87648 • MIL-STD-883