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    5SMX Price and Stock

    Amphenol Times Microwave Systems EZ-195-SM-X

    SMA-MALE (PLUG) CRIMP CONNECTOR,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EZ-195-SM-X Bag 135 1
    • 1 $11.49
    • 10 $9.362
    • 100 $7.6327
    • 1000 $6.825
    • 10000 $6.825
    		Buy Now
    Interstate Connecting Components EZ-195-SM-X 119
    • 1 $11.6173
    • 10 $11.6173
    • 100 $9.1002
    • 1000 $9.1002
    • 10000 $9.1002
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    Daburn Electronics & Cable P34-5SMX

    AC/DC CONVERTER 5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P34-5SMX Bulk 5
    • 1 -
    • 10 $203.162
    • 100 $203.162
    • 1000 $203.162
    • 10000 $203.162
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    Daburn Electronics & Cable P33-15SMX

    AC/DC CONVERTER 15V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P33-15SMX Bulk 5
    • 1 -
    • 10 $189.526
    • 100 $189.526
    • 1000 $189.526
    • 10000 $189.526
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    Daburn Electronics & Cable P34-5SMXA

    AC/DC CONVERTER 5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P34-5SMXA Bulk 5
    • 1 -
    • 10 $203.162
    • 100 $203.162
    • 1000 $203.162
    • 10000 $203.162
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    Daburn Electronics & Cable P34-5SMXE

    AC/DC CONVERTER 5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P34-5SMXE Bulk 5
    • 1 -
    • 10 $203.162
    • 100 $203.162
    • 1000 $203.162
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    Find more 5SMX price and stock on Findchips.com

    5SMX Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5SMX12E1200 ABB Semiconductors Original PDF
    5SMX12E1250 ABB Semiconductors Original PDF
    5SMX 12E1252 ABB Semiconductors Original PDF
    5SMX12E1273 ABB Semiconductors IGBT-Die Original PDF
    5SMX12H1251 ABB Semiconductors Original PDF
    5SMX 12H1252 ABB Semiconductors Original PDF
    5SMX12H1273 ABB Semiconductors IGBT-Die Original PDF
    5SMX12K1250 ABB Semiconductors Original PDF
    5SMX 12K1252 ABB Semiconductors Original PDF
    5SMX12K1273 ABB Semiconductors IGBT-Die Original PDF
    5SMX 12K1700 ABB Semiconductors Original PDF
    5SMX 12K1701 ABB Semiconductors Original PDF
    5SMX12K1701 ABB Semiconductors IGBT-Die Original PDF
    5SMX12L1251 ABB Semiconductors Original PDF
    5SMX 12L1252 ABB Semiconductors Original PDF
    5SMX12L1273 ABB Semiconductors IGBT-Die Original PDF
    5SMX12L2505 ABB Semiconductors Original PDF
    5SMX12L2508 ABB Semiconductors Original PDF
    5SMX 12L2510 ABB Semiconductors Original PDF
    5SMX12L2510 ABB Semiconductors IGBT-Die Original PDF

    5SMX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    abb press-pack igbt

    Abstract: 5slx12n4506
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4507 5SYA1626-03 sp4507 CH-5600 abb press-pack igbt 5slx12n4506

    6smx

    Abstract: Specification Quartz Crystals
    Text: 6SMX Crystals ISSUE 5; 28 SEPTEMBER 2004 Outline in mm Delivery Options 11.8 5.5 Please contact our sales office for current leadtimes 6SMX surface mount crystals are housed in a hermetically resin sealed ceramic package • A pad to pad replacement for the 5SMX & 32SMX


    Original     		PDF 32SMX 50ppm 6smx Specification Quartz Crystals

    abb igbt die

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1274 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1301-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area


    Original     		PDF 12E1274 CH-5600 abb igbt die

    abb press-pack igbt

    Abstract: 12L2516
    Text: VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2516 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1317-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12L2516 CH-5600 abb press-pack igbt 12L2516

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1262 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1630-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12K1262 CH-5600

    abb igbt die

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 PRELIMINARY Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide


    Original     		PDF 12E1280 5SYA1306-01 CH-5600 abb igbt die

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1280 PRELIMINARY Die size: 12.6 x 12.6 mm Doc. No. 5SYA1309-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide


    Original     		PDF 12L1280 5SYA1309-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1262 Die size: 12.6 x 12.6 mm Doc. No. 5SYA 1631-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12L1262 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1274 Die size: 12.6 x 12.6 mm Doc. No. 5SYA 1304-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area


    Original     		PDF 12L1274 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1262 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1628-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12E1262 CH-5600

    IGBT abb

    Abstract: 5SLX12L2510 a7050 V15C
    Text: VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12L2510 CH-5600 IGBT abb 5SLX12L2510 a7050 V15C

    IGBT abb

    Abstract: 5SMX 12M3300 5SLX12M3301 5SMX12M3300
    Text: VCE IC = = 3300 V 50 A IGBT-Die 5SMX 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1621-02 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12M3300 5SYA1621-02 CH-5600 IGBT abb 5SMX 12M3300 5SLX12M3301 5SMX12M3300

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4507 5SYA1626-01 r4507 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-02 Aug 04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4506 5SYA1624-02 specifications4506 CH-5600

    abb press-pack igbt

    Abstract: No abstract text available
    Text: VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2511 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1640-00 Mar 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride


    Original     		PDF 12L2511 5SYA1640-00 CH-5600 abb press-pack igbt

    5SLX12E1200

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1273 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1641-00 Apr 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area


    Original     		PDF 12H1273 CH-5600 5SLX12E1200

    12K12

    Abstract: 5SLX12F1200
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area


    Original     		PDF 12K1273 CH-5600 12K12 5SLX12F1200

    IGBT abb

    Abstract: 5SLX12E1200
    Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1273 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1632-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area


    Original     		PDF 12E1273 wE1273 CH-5600 IGBT abb 5SLX12E1200

    IGBT 6500 V

    Abstract: No abstract text available
    Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-02 July 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12M6500 5SYA1627-02 CH-5600 IGBT 6500 V

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1262 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1629-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12H1262 CH-5600

    12M6501

    Abstract: No abstract text available
    Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6501 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-03 11 11 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12M6501 5SYA1627-03 CH-5600 12M6501

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1274 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1305-00 May 08 • • • • Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Optimized for paralleling Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12M1274 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1252 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1623-01 Apr 04 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


    Original     		PDF 12M1252 5SYA1623-01 CH-5600

    5SMX 12M6500

    Abstract: 5SMX
    Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-00 Mrz.05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12M6500 5SYA1627-00 CH-5600 5SMX 12M6500 5SMX