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    abb press-pack igbt

    Abstract: 5slx12n4506
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4507 5SYA1626-03 sp4507 CH-5600 abb press-pack igbt 5slx12n4506

    KDS 6.000

    Abstract: 5slx12n4506
    Text: 9& ,&  9  $ ,*%7'LH 60; 1 35(/,0,1$5< 'LH VL]H  [  PP Doc. No. 5SYA1624-00 Dec.03 • • • • /RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH ERQGDEOH HPLWWHU DUHD 3DVVLYDWLRQ 6,326 DQG 6LOLFRQ 1LWULGH SOXV 3RO\LPLGH 0D[LPXP UDWHG YDOXHV  


    Original     		PDF 5SYA1624-00 CH-5600 KDS 6.000 5slx12n4506

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4507 5SYA1626-01 r4507 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-02 Aug 04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4506 5SYA1624-02 specifications4506 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4506 5SYA1624-03 CH-5600

    IGBT abb

    Abstract: abb press-pack igbt IGBT abb datasheets 5slx12n4506
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-00 Aug.04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4507 5SYA1626-00 speN4507 CH-5600 IGBT abb abb press-pack igbt IGBT abb datasheets 5slx12n4506