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    5N60 Search Results

    5N60 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TK125N60Z1 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 600 V, 20 A, 0.125 Ω@10 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    5N60 Price and Stock

    onsemi FQD5N60CTM

    MOSFET N-CH 600V 2.8A DPAK
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    DigiKey FQD5N60CTM Cut Tape 16,383 1
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    FQD5N60CTM Digi-Reel 16,383 1
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    FQD5N60CTM Reel 15,000 2,500
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    ComSIT USA FQD5N60CTM 608
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    FQD5N60CTM 2,623
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    Richardson RFPD FQD5N60CTM 2,500
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    Avnet Asia FQD5N60CTM 8 Weeks 2,500
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    Vishay Siliconix SIHK075N60E-T1-GE3

    E SERIES POWER MOSFET POWERPAK 1
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    DigiKey SIHK075N60E-T1-GE3 Reel 2,000 2,000
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    SIHK075N60E-T1-GE3 Cut Tape 25 1
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    Samsung Semiconductor SPHWH1L5N607YEV3A2

    LED LH502C WARM WHT 3000K 2020
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    DigiKey SPHWH1L5N607YEV3A2 Cut Tape 1,205 1
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    SPHWH1L5N607YEV3A2 Digi-Reel 1,205 1
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    Samsung Semiconductor SPHWH1L5N603YEQ5A2

    LED LH502C COOL WHITE 5700K SMD
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    DigiKey SPHWH1L5N603YEQ5A2 Digi-Reel 1,110 1
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    STMicroelectronics STP25N60M2-EP

    MOSFET N-CH 600V 18A TO220
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    DigiKey STP25N60M2-EP Tube 1,006 1
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    Newark STP25N60M2-EP Bulk 44 1
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    TME STP25N60M2-EP 1
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    Avnet Silica STP25N60M2-EP 1,000 15 Weeks 50
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    Find more 5N60 price and stock on Findchips.com

    5N60 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5N60 Unisonic Technologies 4.5 Amps, 600 Volts N-CHANNEL MOSFET Original PDF
    5N60L Unisonic Technologies 4.5 Amps, 600 Volts N-CHANNEL MOSFET Original PDF
    5N60-TA3-T Unisonic Technologies 4.5 Amps, 600 Volts N-CHANNEL MOSFET Original PDF
    5N60-TF3-T Unisonic Technologies 4.5 Amps, 600 Volts N-CHANNEL MOSFET Original PDF

    5N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5n60p

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		5N60P O-220 O-263 O-263 O-220) 405B2 5n60p PDF

    5N60B

    Abstract: 5N60 5n60-b 5N60A utc 5n60l 5N60 datasheet 5N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-252 O-251 QW-R502-065 5N60B 5N60 5n60-b 5N60A utc 5n60l 5N60 datasheet 5N60L PDF

    utc 5n60l

    Abstract: 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION „ The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		O-220 O-220F O-220F1 O-220F2 QW-R502-065 utc 5n60l 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G PDF

    5N60

    Abstract: 5N60L 5N60-TA3-T UTC5N60 5N60 datasheet 5N60-TF3-T utc 5n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-220 O-220F 5N60L QW-R502-065 5N60 5N60L 5N60-TA3-T UTC5N60 5N60 datasheet 5N60-TF3-T utc 5n60l PDF

    5N60G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		QW-R502-065 5N60G PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		5N60L QW-R502-065 PDF

    5n60p

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 ID25 = 5 RDS on ≤ 1.7 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSS VGSM Continuous Transient ID25 IDM


    Original     		5N60P 5n60p PDF

    igbt 300V 5A

    Abstract: SGW5N60RUF 5A IGBT
    Text: SGW 5N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		SGW5N60RUF igbt 300V 5A SGW5N60RUF 5A IGBT PDF

    SGW5N60RUFD

    Abstract: No abstract text available
    Text: SGW 5N60RUFD FE A TU R ES C O -P A K IG B T D2-PAK * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) 4* A P P LIC A TIO N S


    OCR Scan     		SGW5N60RUFD SGW5N60RUFD PDF

    5N60K

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60K-MT Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		5N60K-MT 5N60K-MT QW-R205-038 5N60K PDF

    5n60b

    Abstract: 5N60A 5n60-b
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-220 O-220F 5N60L QW-R502-065 5n60b 5N60A 5n60-b PDF

    5N60P

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 ID25 = 5 RDS on ≤ 1.7 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSS VGSM Continuous Transient ID25 IDM


    Original     		5N60P O-263 O-220 5N60P PDF

    5N60A

    Abstract: 5N60B 5N60 5n60 mosfet UTC5n60 utc 5n60l 5N60 datasheet 100SU MOSFET having TO-252 PAckage 5N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		QW-R502-065 5N60A 5N60B 5N60 5n60 mosfet UTC5n60 utc 5n60l 5N60 datasheet 100SU MOSFET having TO-252 PAckage 5N60L PDF

    5N60G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 „ TO-220F TO-220 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		O-220F O-220 O-220F1 O-220F2 QW-R502-065 5N60G PDF

    G5N60

    Abstract: 5n60 100SU utc 5n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION „ The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-252 O-251 O-220 QW-R502-065 G5N60 5n60 100SU utc 5n60l PDF

    5n60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		QW-R502-065 5n60 PDF

    5N60M

    Abstract: No abstract text available
    Text: 5N60M2, 5N60M2, 5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes 3 1 VDS @ TJmax RDS on max ID 650 V 1.4 Ω 3.7 A 5N60M2


    Original     		STD5N60M2, STP5N60M2, STU5N60M2 O-220 STD5N60M2 STP5N60M2 O-220 DocID025318 5N60M PDF

    12v to 230v inverters circuit diagrams

    Abstract: 800 kva inverter circuit diagrams IR2112 application note IGBT inverter calculation 10n60rufd 12V 230V Inverter Diagram for IGBT PC817 example circuits 800 kva inverter diagrams IR2112 equivalent pc817 application note
    Text: Application Note 9017 June, 2001 Manufacturing Technology of a Small Capacity Inverter Using a Fairchild IGBT by Kee Ju Um, Yeong Joo Kim CONTENTS 1. 2. How to choose gate resistance .2


    Original     		SGP5N60RUFD 12v to 230v inverters circuit diagrams 800 kva inverter circuit diagrams IR2112 application note IGBT inverter calculation 10n60rufd 12V 230V Inverter Diagram for IGBT PC817 example circuits 800 kva inverter diagrams IR2112 equivalent pc817 application note PDF

    2N80

    Abstract: 5P30
    Text: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _


    OCR Scan     		DIP-14 DIP-G14* 2N100 3KI33 3N100 5N100 2N80 5P30 PDF

    br 5n60

    Abstract: 5N60 MOSFET IGSS 100nA VDS 20V MIL-HDBK-263
    Text: E 5N60 VDSS=600V; ID=5.0A; RDS ON =2.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO­220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain­to­Source Breakdown Voltage


    Original     		100nA br 5n60 5N60 MOSFET IGSS 100nA VDS 20V MIL-HDBK-263 PDF

    HC 5287

    Abstract: sck 104 thermistor 16T202DA1 RBS 3101 pm3a104k 16t202da1e 103 2KV ZNR 471 710 opto coupler HA 1156 wp
    Text: D C B A VDC_AD support DA1 KDS226 MC_CON AC2 AC1 PV3.3 DCP 1 3 PV3.3 C35 104,50V DCP 2 PV5 Q2 KRC101S R9 4.7KJ0 R39 100KF,1W R40 100KF,1W 100KF,1W R41 R42 100KF,1W VDC_FB Z1 ZNR 471 R51 4.7KJ0 support 2 1 R38 2.8KF0 2 1 PV5 U1 KA5H0280R SPS 2 2 support 500K,2W


    Original     		KDS226 KRC101S 100KF KA5H0280R 474/AC275V PM3A104K U1DL-44A HC 5287 sck 104 thermistor 16T202DA1 RBS 3101 pm3a104k 16t202da1e 103 2KV ZNR 471 710 opto coupler HA 1156 wp PDF

    Infineon Specific HCI Commands bluetooth

    Abstract: PBA31308 Q2331308 G0644 CLK32 PMB8753 bluemoon crystal 26 Mhz Bluetooth RSSI circuit diagram infineon HCI
    Text: P rod uc t O v erv i ew T3130-8XV10PO5-7600 Jan 2007 PBA 31308 Bluetooth QD ID : B012097/B012098 UniStone BlueMoon Universal Platform N e v e r s t o p t h i n k i n g . Edition 2007-01-31 Published by Infineon Technologies AG 81726 Munich, Germany Infineon Technologies AG 2007.


    Original     		T3130-8XV10PO5-7600 B012097/B012098 T3130-8XV10PO5-7600, Infineon Specific HCI Commands bluetooth PBA31308 Q2331308 G0644 CLK32 PMB8753 bluemoon crystal 26 Mhz Bluetooth RSSI circuit diagram infineon HCI PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P PDF

    K6R4016V1D-UI10

    Abstract: LD0506 BLM21PG331SN1D TP0950 R1004 lm4480 transistor c1026 K6R4016V1D 7-segment LED display 1 to 99 vhdl FB0701
    Text: LatticeMico32/DSP Development Board for LatticeECP2 User’s Guide June 2009 Revision: EB26_02.6 LatticeMico32/DSP Development Board for LatticeECP2 User’s Guide Lattice Semiconductor Introduction This document describes the features and functionality of the LatticeMico32 /DSP Development Board for


    Original     		LatticeMico32/DSP LatticeMico32TM/DSP LatticeMico32 100mm, 150mm, 120mm, K6R4016V1D-UI10 LD0506 BLM21PG331SN1D TP0950 R1004 lm4480 transistor c1026 K6R4016V1D 7-segment LED display 1 to 99 vhdl FB0701 PDF