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    5N50P Search Results

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    5N50P Price and Stock

    IXYS Corporation IXTA5N50P

    MOSFET N-CH 500V 4.8A TO263
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    DigiKey IXTA5N50P Tube
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    IXYS Corporation IXTY5N50P

    MOSFET N-CH 500V 4.8A TO252
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    DigiKey IXTY5N50P Tube 70
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    IXYS Corporation IXTP5N50P

    MOSFET N-CH 500V 4.8A TO220AB
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    IXYS Corporation IXTU5N50P

    MOSFET N-CH 500V 4.8A TO252
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    DigiKey IXTU5N50P Tube 75
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    IXYS Corporation IXFY5N50P3

    MOSFET N-CH 500V 5A TO252
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    Mouser Electronics IXFY5N50P3
    • 1 $2.23
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    5N50P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N50P IXTP 5N50P VDSS = 500 = 5 ID25 RDS on ≤ 1.3 V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings


    Original     		5N50P 5N50P O-220 O-263 PDF

    5N50

    Abstract: 5N50P
    Text: PolarHVTM Power MOSFET IXTA IXTP IXTV IXTY N-Channel Enhancement Mode Avalanche Rated VDSS = 500 V ID25 = 4.8 A RDS on ≤ 1.4 Ω 5N50P 5N50P 5N50P 5N50P TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		5N50P O-263 5N50 5N50P PDF

    5N50

    Abstract: 5N50P
    Text: Advance Technical Information PolarHVTM Power MOSFET VDSS = 500 V = 4.8 A ID25 RDS on ≤ 1.4 Ω IXTA 5N50P IXTP 5N50P IXTY 5N50P N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		5N50P 405B2 5N50P 5N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V = 4.8 A ID25 RDS on ≤ 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		5N50P 5N50P O-263 O-220 O-252 405B2 PDF

    5N50

    Abstract: HiperFET TR 505 diode 5N50PM ixtp.m
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFP 5N50PM VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500 3.2 1.4 200 V A Ω ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		5N50PM -55ions 405B2 5N50 HiperFET TR 505 diode 5N50PM ixtp.m PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50-P Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50-P is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original     		5N50-P 5N50-P QW-R205-027 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF