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    5CI TRANSISTOR Search Results

    5CI TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    5CI TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FPE100

    Abstract: FPT610 fpe500 FPT570 FPE104 FPE106 FPE510 FPE520 FPT550A FPT560
    Text: FAIRCHILD OPTOELECTRONICS r - OPTO PHOTO TRANSISTORS DEVICE Item NO. Cont’d Description v CEO lc = 1.0mA V Min Typ •CE(lt) VCE = 5.0V mA Min Typ Max VcE(sat) H = 20mW/cm2 V Min Typ Max Typ Package No. 18 0pto-30 tr/tf /US


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    20mW/crri2 FPT550A 0pto-30 FPT560 Opto-29 FPT570 FPT610 500/uA Opto-31 FPE100 fpe500 FPE104 FPE106 FPE510 FPE520 PDF

    BT4124

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SM BT4124 sZ C Q68000-A8316 B SOT-23 E C Maximum Ratings


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    SMBT4124 BT4124 Q68000-A8316 OT-23 EHP0W37 BT4124 PDF

    OF TRANSISTOR BC337

    Abstract: BC337 leads
    Text: BC337 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR / u T E M ir I POWER SEMICONDUCTOR J Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E J L A TO-92


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    BC337 625mW MIL-STD-202, DS21610 OF TRANSISTOR BC337 BC337 leads PDF

    BF337

    Abstract: 2N5832 BF336 2N5058 bf338 se7055 FAIRCHILD TO-106 se7056 BD115 PE7058 transistor
    Text: FAIRCHILD TRANSISTORS S M A L L S IG N A L HIGH VOLTAGE AMPLIFIER TRANSISTORS BY ASCENDING VcEO VCEO Item DEVIC E NO. Poliirity NPN PNP hFE »T @ ic V Min Min/Max mA MHz Min Pd C0b pF Max (Confd) Ta 25° C mW TC 25° C W Package No. 1.79 TO-92 1 BC533 160


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    BC533 MPS5551M 2N5831 2N5832 2N5833 BF336 BD115 BF337 2N4926 MPSA43 BF337 2N5832 BF336 2N5058 bf338 se7055 FAIRCHILD TO-106 se7056 BD115 PE7058 transistor PDF

    BF336

    Abstract: PE7058 transistor SE7055 BF338 2N5832 SE7056 BD115 BF152 fairchild to-106 2N5059
    Text: FAIRCHILD TRANSISTORS PO W ER Item IC = 0.1 A 0» @ lc m VCEO hFE V Max Mln/Max o DEVICE NO. Polarity NPN PNP < POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING VQEO V Max @ ic A *T MHz Min(Typ) PD(Max) W T C= 25°C Package No. A Max Continuous 1 BF257


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    BF257 BF336 BF337 BF338 BF258 D40N1F D40N2F BF259 D40N3F D40N4F BF336 PE7058 transistor SE7055 BF338 2N5832 SE7056 BD115 BF152 fairchild to-106 2N5059 PDF

    KSA634

    Abstract: transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 KSB1151 SO-330 F33-C transistor bI 240
    Text: SAMSUNG SEMICONDUCTOR INC ^ KSB1151 14E D | T 'ìt M lM à QaO?S5fl PNP EPITAXIAL SILICON TRANSISTOR T LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT - Ì 3 - Ì ? TO-126 HIGH POWER DISSIPATION: PT=1.3W <T.=25°C Complementary to KSD1891 ABSOLUTE MAXIMUM RATINGS Ta=25°C)


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    KSB1151 KSD1891 O-126 KSA634 transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 SO-330 F33-C transistor bI 240 PDF

    2SC2995Y

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2995 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS ? < ; r 7 Q Q <5 Unit in mm F M / A M RF, M IX , OSC, IF HIGH FREQUENCY AMPLIFIER APPLICATIONS. 4.2MAX. • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM /AM RF, MIX, OSC and IF.


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    2SC2995 55MAX. 200MHz 2SC2995Y PDF

    TTPC

    Abstract: BUK474-500B rm3 transistor BUK474
    Text: Philips Components Data sheet status Preliminary specification date of issue March 1991 INTERNATIONAL N -channel en han cem en t m ode field-effect pow er transistor in a plastic full-pack envelope. T h e device is intended for use in Switched M ode P ow er Supplies


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    BUK474-500B 7110fl2b -SOT186A 711Dfl2b 0D44b23 TTPC BUK474-500B rm3 transistor BUK474 PDF

    MTM5N40

    Abstract: mtp5n40 MTP5N40E 221A-06 AN569
    Text: b 3 b 7 2 5 H D [ H a 5 S 2 HIT • H 0 T b bflE D M O T O R O L A SC X S T R S / R F MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 5N40 *MTP5N40E Designer's Data Sheet •Motorola Preferred Device Pow er Field Effect Transistor N-Channel Enhancem ent-Mode


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    b3b725H MTM5N40 MTP5N40E MTM/MTP5N40 MTM5N40 mtp5n40 MTP5N40E 221A-06 AN569 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbSB'lBl 00300^7 38b • APX Product specification UHF power MOS transistor BLF522 N AMER PHILIPS/DISCRETE FEATURES b'lE » PIN CONFIGURATION • High power gain o • Easy power control - ''l • Gold metallization • Good thermal stability


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    BLF522 OT171 MRA248 PDF

    Untitled

    Abstract: No abstract text available
    Text: ATF-44100 AT-8141 2-8 GHz Medium Power Gallium Arsenide FET Wfijm HEWLETT mLfim PACKARD Chip Outline Features • • • High Output Power: 32.0 dBm typical Pi dBat 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz High Power Efficiency:


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    ATF-44100 AT-8141) ATF-44100 PDF

    philips blx14

    Abstract: BLX14
    Text: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DQ2TSbl T52 I BLX14 H .F./V .H .F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, AB and B operated transmitting equipment in the h.f. and v.h.f. band. • rated fo r 50 W P.E.P. at 1,6 MHz to 28 MHz


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    bbS3T31 BLX14 philips blx14 BLX14 PDF

    TBA311

    Abstract: TCA511 TCA 420 s0212 vertical section horizontal section of tv and the block diagram transistor horizontal section tv s0214
    Text: TCA 511 LINEAR INTEGRATED CIRCUIT TV HORIZONTAL AND VERTICAL PROCESSOR The TCA 511 is a silico n m on olithic integrated circ u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: high sta b ility horizontal oscilla to r,


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    16-lead TBA311 TCA511 TCA 420 s0212 vertical section horizontal section of tv and the block diagram transistor horizontal section tv s0214 PDF

    Untitled

    Abstract: No abstract text available
    Text: c Overdrive-Protected Wideband Op Amp i. -i- • ir „H i APPLICATIONS: FEATURES: • • • • • • • • • • • • • fast, precision A /D conversion automatic test equipment input/o u tp u t amplifiers photodiode, CCD preamps IF processors


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    LC205 170MHz 570mW CLC205 PDF

    marking se sot 23-5

    Abstract: U G N 3140 sensor transistor tic 2260 MARKING VA SOT-23-5 TK71635
    Text: r& TO K O TK716xx LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Available in ± 2.0 % or ± 1.0 % Output Tolerance ■ Battery Powered Systems ■ Active High On/Off Control ■ Cellular Telephones ■ Very Low Quiescent Current ■ Pagers ■ Very Low Dropout Voltage


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    TK716xx TK716xx 98TokO marking se sot 23-5 U G N 3140 sensor transistor tic 2260 MARKING VA SOT-23-5 TK71635 PDF

    marking R5C

    Abstract: marking a hA packages SC70-5 sot23-5 marking ha marking c7 sot-23-5 transistor R5C 5-30V LMV331 LMV339 LMV393 SC70-5
    Text: & Semiconductor LMV331 Single / LMV393 Dual / LMV339 Quad General Purpose, Low Voltage, TinyPack Comparators General Description Features The LM V393 and LM V339 are low voltage 2.7-5V versions of th e dual and quad com parators, LM 393/339, w hich are specified at 5-30V. The LMV331 is the single version, which


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    LMV331 LMV393 LMV339 LM393/339, SC70-5 OT23-5 marking R5C marking a hA packages SC70-5 sot23-5 marking ha marking c7 sot-23-5 transistor R5C 5-30V PDF

    CI SG3524

    Abstract: No abstract text available
    Text: IN T E G R A T E D C IR C U IT S UC1524 UC2524 UC3524 U N IT R O D E Advanced Regulating Pulse Width Modulators DESCRIPTIO N FEATURES Complete PWM Power Control Circuitry • Uncommitted Outputs for Single-ended or Push-pull Applications • Low Standby Current. 8mA


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    UC1524 UC2524 UC3524 SG1524, SG2524 SG3524, UC1524, UC2524 UC3524 UC1524 CI SG3524 PDF

    Untitled

    Abstract: No abstract text available
    Text: M ITSU BISH I M IC R O C O M P U T E R S M37733EHLXXXHP . PROM VERSION OF M37733MHLXXXHP DESCRIPTION • S in g le pow er s u p p ly . 2 .7 -5 .5 V The M 37733E H LX X X H P is a single-chip m icrocom puter using the


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    M37733EHLXXXHP M37733MHLXXXHP 37733E 16-bit 37733EH 37733EH PDF

    DIP42S

    Abstract: LC66304A LC66599 LC66E308 QIP48E rom 512x4 cms ZF1 LC66404 date code Sanyo semiconductor 3113B FLAN Series murata
    Text: Ordering num ber:EN3113B CMOS LSI No.3i 13b I LC66304A,66306A,66308A r S A i IÌ Y 4K /6K /8K -B Y TE ROM -CON TAIN ED SIN G LE-C H IP 4-BIT M ICRO CO M PU TER FO R C O N T R O L-O R IE N T ED A P P LIC A T IO N S


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    EN3113B 3113B LC66304A, 6306A, 6308A 6308A 42-pin 12-bit DIP42S LC66304A LC66599 LC66E308 QIP48E rom 512x4 cms ZF1 LC66404 date code Sanyo semiconductor 3113B FLAN Series murata PDF

    Untitled

    Abstract: No abstract text available
    Text: IM P O R T A N T N O TIC E All new designs should use XC3000A or XC3100A. Information on XC3000 and XC3100 is presented here as reference for existing designs. £ x il in x XC3000, XC3000A, XC3000L, XC3100, XC3100A Logic Cell Array Families Product Description


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    XC3000A XC3100A. XC3000 XC3100 XC3000, XC3000A, XC3000L, XC3100, XC3100A PDF

    CL100 transistor

    Abstract: transistor E 13009 1024x4 bit ram transistor cl100 if6 hall 13009 TRANSISTOR equivalent gm f131 13005 TRANSISTOR HALL EFFECT TRANSISTOR 17S IAIO 3Y
    Text: MIL-M-38510/245A 28 January 1987 _ s u p e r s iin r MIL-H-38510/2455 USAF 5 April 1983 " m ilit a r y spec ific a t io n MICROCIRCUITS, DIGITAL. CMOS, 4096 BIT, STATIC RANDOM ACCESS MEHORY SRAM), BULK SILICON AND SILICON 0# SAPPHIRE This specification 1s approved f ° r use


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    mil-m-38510/245A mil-m-38510, NIL-M-3S510/24SA CL100 transistor transistor E 13009 1024x4 bit ram transistor cl100 if6 hall 13009 TRANSISTOR equivalent gm f131 13005 TRANSISTOR HALL EFFECT TRANSISTOR 17S IAIO 3Y PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PM Datasheet PMC-980618 PMC-Sierra, Inc. Issue 2 PM 73487 QRT 622 Mbps ATM Traffic Management Device PM73487 QRT 622 Mbps ATM Traffic Management Device DATASHEET Preliminary Issue 2: October 1998 m room'll DDEisaa 7^? n _ PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE


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    PMC-980618 PM73487 PM73487 73487-P PDF

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


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    AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent PDF

    IXP2400 and IXP2800 Network Processor Programmer

    Abstract: IXP2800 programmers reference manual IXP2850 argus IXP2800 IXP2800 programmer reference manual IXP1200 programming IXP2400 programmers Reference Manual IXP2400 IXP2850 programmer
    Text: IX P 2400/2800 Programming The Complete Microengine Coding Guide Erik J. Johnson Aaron R. Kunze IN TEL PRESS Copyright 2003 Intel Corporation. All rights reserved. ISBN 0-9717861-6-X No part of this publication may be reproduced, stored in a retrieval system or trans­


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    IXP2400/2800 0-9717861-6-X IXP2400 and IXP2800 Network Processor Programmer IXP2800 programmers reference manual IXP2850 argus IXP2800 IXP2800 programmer reference manual IXP1200 programming IXP2400 programmers Reference Manual IXP2400 IXP2850 programmer PDF