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    KSA634

    Abstract: transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 KSB1151 SO-330 F33-C transistor bI 240
    Text: SAMSUNG SEMICONDUCTOR INC ^ KSB1151 14E D | T 'ìt M lM à QaO?S5fl PNP EPITAXIAL SILICON TRANSISTOR T LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT - Ì 3 - Ì ? TO-126 HIGH POWER DISSIPATION: PT=1.3W <T.=25°C Complementary to KSD1891 ABSOLUTE MAXIMUM RATINGS Ta=25°C)


    OCR Scan     		PDF KSB1151 KSD1891 O-126 KSA634 transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 SO-330 F33-C transistor bI 240