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    58N20Q Price and Stock

    IXYS Corporation IXFT58N20Q

    MOSFET N-CH 200V 58A TO268
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    IXYS Corporation IXFH58N20Q

    MOSFET N-CH 200V 58A TO247AD
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    IXYS Corporation IXFT58N20Q-TRL

    MOSFET N-CH 200V 58A TO268
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    58N20Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    58N2

    Abstract: 58N20
    Text: HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS on Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 58N20Q O-268 O-268 58N2 58N20

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet


    Original     		PDF 58N20Q ISOPLUS247TM 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM Q-Class IXFR 58N20Q VDSS = 200 V = 50 A ID25 RDS on = 40 mW trr £ 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    Original     		PDF ISOPLUS247TM 58N20Q

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM Q-Class IXFR 58N20Q VDSS = 200 V ID25 = 50 A RDS on = 40 mW trr £ 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    Original     		PDF ISOPLUS247TM 58N20Q 247TM E153432

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS on Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 58N20Q O-268 O-268

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS H H ifl JL æ* X HiPerFET Power MOSFETs IXFH 58N20Q IXFT 58N20Q Q-Class VDSS = '□25 = R DS on = 200 V 58 A mQ 4 0 trr < 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, LowQg Preliminary data sheet Symbol Maximum Ratings Test Conditions


    OCR Scan     		PDF 58N20Q O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: nixYS IXFH 58N20Q IXFT 58N20Q HiPerFET Power MOSFETs Q -Class V DSS = ^D25 D DS on — ” 200 V 58 A 40 mQ trr <200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet TO-268 (D3) (IXFT) C ase Style Maximum Ratings


    OCR Scan     		PDF 58N20Q 58N20Q O-268 O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET Power MOSFETs IXFR 58N20Q ISOPLUS247™ Q Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances trr <200 ns Maximum Ratings Symbol Test Conditions


    OCR Scan     		PDF 58N20Q ISOPLUS247TM Cto150 247TM 00A/ns

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q Class = 200 V = 50 A D25 R DS on = 40 mQ 58N20Q V,DSS (Electrically Isolated Back Surface) trr < 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    OCR Scan     		PDF ISOPLUS247â IXFR58N20Q

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10