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    5609 TRANSISTOR Search Results

    5609 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5609 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5609 transistor

    Abstract: transistor 5609 TRANSISTOR-5609 5609 npn transistor 5609 npn 5609 a/TRANSISTOR-5609
    Text: 5609 YOUDA TRANSISTOR Si NPN TRANSISTOR—5609 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 25V *Collector current up to 1A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF TRANSISTOR--5609 5609 transistor transistor 5609 TRANSISTOR-5609 5609 npn transistor 5609 npn 5609 a/TRANSISTOR-5609

    5609

    Abstract: DATASHEET 5609 2*5609 2N5607 2N5609 2N5605 5609 c 2N5611
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 5609 c 2N5611

    5609

    Abstract: DATASHEET 5609 2N5605 2*5609 2N5607 2N5609 2N5611
    Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 2N5611

    5609

    Abstract: DATASHEET 5609 2N5609 5609 c 2N5607 S 5609 2N5605 2N5611 ic 5611
    Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 5609 c S 5609 2N5611 ic 5611

    5609

    Abstract: I334 DATASHEET 5609 I334-I363-IZ DATASHEET 5609 transistor 90K-600 5609 6 LC h5609 5609 filter LM363D
    Text: LM363 Precision Instrumentation Amplifier General Description The LM363 is a monolithic true instrumentation amplifier It requires no external parts for fixed gains of 10 100 and 1000 High precision is attained by on-chip trimming of offset voltage and gain A super-beta bipolar input stage gives


    Original     		PDF LM363 5609 I334 DATASHEET 5609 I334-I363-IZ DATASHEET 5609 transistor 90K-600 5609 6 LC h5609 5609 filter LM363D

    H5609

    Abstract: ultronix 105A LM363 oven rtd sensor
    Text: LM363 LM363 Precision Instrumentation Amplifier Literature Number: SNOSBG8A LM363 Precision Instrumentation Amplifier General Description e eliminate bandwidth loss due to cable capacitance Compensation pins allow overcompensation to reduce bandwidth and output noise or to provide greater stability with


    Original     		PDF LM363 LM363 H5609 ultronix 105A oven rtd sensor

    Untitled

    Abstract: No abstract text available
    Text: MMBT2907A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23


    Original     		PDF MMBT2907A OT-23 -55OCto 150OC OT-23 MIL-STD-202E

    Untitled

    Abstract: No abstract text available
    Text: MMBT4403 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23


    Original     		PDF MMBT4403 OT-23 -55OC 150OC OT-23 MIL-STD-202E

    mc33074

    Abstract: TL3474 equivalent 5609 transistor CI MC34074 transistor 5609 T3474A tl3474idr
    Text: TL3474, TL3474A HIGH-SLEW-RATE, SINGLE-SUPPLY OPERATIONAL AMPLIFIERS SLVS461A – JANUARY 2003 – REVISED APRIL 2003 D D D D D D D D D D D, N, OR PW PACKAGE TOP VIEW Low Offset . . . 3 mV (Max) for A-Grade Wide Gain-Bandwidth Product . . . 4 MHz High Slew Rate . . . 13 V/µs


    Original     		PDF TL3474, TL3474A SLVS461A MC33074/A MC34074/A TL3474IPWR OPAMPEVM-SOT23 MSOP/SOIC/SOT-23 SLVC003A, mc33074 TL3474 equivalent 5609 transistor CI MC34074 transistor 5609 T3474A tl3474idr

    XB1005-BD-000V

    Abstract: 5609 transistor XB1005 XB1005-BD XB1005-BD-EV1 720-0164 15-1090 MAX 77693 143-028 876-1424
    Text: XB1005-BD Buffer Amplifier 35.0-45.0 GHz Rev. V1 Features Chip Device Layout •       High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias


    Original     		PDF XB1005-BD Mil-Std-883 XB1005-BD-000V 5609 transistor XB1005 XB1005-BD XB1005-BD-EV1 720-0164 15-1090 MAX 77693 143-028 876-1424

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    STR W 5753 a

    Abstract: LA 42072 str w 5753 str 5753 STR S 5741 uc 8343 hai 7358 PA 0016 PIONEER Str W 5754 STR G 6352
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book LEADED SOLID ELECTROLYTE TANTALEX CAPACITORS vishay vse-db0029-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0029-0805 STR W 5753 a LA 42072 str w 5753 str 5753 STR S 5741 uc 8343 hai 7358 PA 0016 PIONEER Str W 5754 STR G 6352

    sgm 8905

    Abstract: 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t
    Text: December 19, 2000 Preface to the 13th Edition The Harmonized Tariff Schedule of the United States, Annotated for Statistical Reporting Purposes HTS 2001 is being published pursuant to section 1207 of the Omnibus Trade and Competitiveness Act of 1988 (P.L.


    Original     		PDF \FR\FM\21DED1 pfrm02 21DED1 sgm 8905 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t

    schematic diagram inverter delta free

    Abstract: 423104
    Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer


    Original     		PDF ARM926EJ-STM 16-bits 24-bit 6242D 06-Jan-09 schematic diagram inverter delta free 423104

    117L7

    Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
    Text: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.


    OCR Scan     		PDF 19JN8 19JN8 117L7 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7

    R5612

    Abstract: R5609 R5611 TS8510 TS8511 TS8512 TS8513 TS8514 TS8532 TS8540
    Text: T S 8 5X X S W IT C H E D CA P A C ITO R M A S K P R O G R A M M A B LE FILTER The T S 85 X X circuits are HCMOS universal filters containing a mask programmable switched-capacitor cascadable structure and two uncom­ mitted genera! purpose operational amplifiers.


    OCR Scan     		PDF TS85XX 250/iA) TS8511 R5612 R5609 R5611 TS8510 TS8511 TS8512 TS8513 TS8514 TS8532 TS8540

    diode I334

    Abstract: 110V AC to 3V DC, 13v DC, 24v power B509 LM363D I334
    Text: S e m i c o n d u c t o r LM363 Precision Instrumentation Amplifier General Description The LM363 is a monolithic true instrumentation amplifier. It requires no external parts for Fixed gains o f 10, 100 and 1000. High precision is attained by on-chip trimming of off­


    OCR Scan     		PDF LM363 81-043-299-240S b5D1124 diode I334 110V AC to 3V DC, 13v DC, 24v power B509 LM363D I334

    TS8531

    Abstract: R5609 R5611 R5612 TS8510 TS8511 TS8512 TS8513 TS8514 TS8532
    Text: T S 8 5X X SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER The TS 85X X c irc u its are HC M O S unive rsa l filte r s c o n ta in in g a m ask pro g ra m m a b le s w itch e d -ca p a c ito r cascadable s tru c tu re and tw o un co m ­ m itte d genera! purpose ope ra tio n a l am p lifie rs .


    OCR Scan     		PDF TS85XX TS8531 IE98S1 TS8531 R5609 R5611 R5612 TS8510 TS8511 TS8512 TS8513 TS8514 TS8532

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


    OCR Scan     		PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    led 7 segment LDS 5161 AK

    Abstract: led 7 segment LDS 5161 AH 7-segment 4 digit LFD 5522 AKO 701 434 tdso 5160 k lds 7 segment LDS 5161 AK led 7 segment LDS 5161 As manual LG VARIABLE FREQUENCY DRIVE is3 -20/led 7 segment LDS 5161 AH ako 544 126
    Text: NAM E; C O M P A N Y :. ADDRESS; . . C IT Y ; S TA TE: Z IP : C O U N T R Y :. P H O N E N O .; . .I — ;.-,. ' - V- ORDER NO. QTY. TITLE fTTT ±j . • . n i i lU . . II 11 1 i i 1111 1-T 2 .-.


    OCR Scan     		PDF X011-6 178Erasm X011-2712-803-8294 12thFloor, 15thFloor, 18479R X23756S led 7 segment LDS 5161 AK led 7 segment LDS 5161 AH 7-segment 4 digit LFD 5522 AKO 701 434 tdso 5160 k lds 7 segment LDS 5161 AK led 7 segment LDS 5161 As manual LG VARIABLE FREQUENCY DRIVE is3 -20/led 7 segment LDS 5161 AH ako 544 126