530 TRANSISTOR Search Results

V62C518256LL-70P

Abstract: basic stamp2 AN-051 DS1225 DS1230 T2400 8kx8 RAM AN052 32kx8 sram AN051
Contextual Info: RAMPack B Serial RAM Module *Byte/Block Addressing *Sequential Buffer Mode *Multiple Baud Rates *8K to 32K Bytes of RAM SOLUTIONS CUBED 3029-F Esplanade Chico, CA 95973 phone 530 891-8045 fax (530) 891-1643 www.solutions-cubed.com MINIATURE ENGINEERING MODULES

pic tachometer circuit

Abstract: of pwm based bidirectional dc motor speed con AN253 maxim motor mind c basic stamp 2 Tachometer circuit 09C4H 5-30V A3952SLB AN-252
Contextual Info: Shown without heat sink Motor Mind B DC Motor Control Module *Adjust Speed/Direction *Easy Serial Interface *Tachometer/Counter Input SOLUTIONS CUBED 256 East 1st Street Chico, CA 95928 phone (530) 891-8045 fax (530) 891-1643 www.solutions-cubed.com MINIATURE ENGINEERING MODULES

PWR530

Contextual Info: User's Guide SLVU890 – April 2013 TPS54531EVM-530, 5-A Regulator Evaluation Module This user's guide contains information for the TPS54531EVM-530 evaluation module as well as for the TPS54531. Included are the performance specifications, schematic, and the bill of materials of the

Solutions Cubed

Contextual Info: Shown without heat sink Motor Mind B DC Motor Control Module *Adjust Speed/Direction *Easy Serial Interface *Tachometer/Counter Input SOLUTIONS CUBED 3029-F Esplanade Chico, CA 95973 phone (530) 891-8045 fax (530) 891-1643 www.solutions-cubed.com MINIATURE ENGINEERING MODULES

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E IR F 530 IR F 530 F I • . . . . . . V dss RDS on Id 100 V 100 V < 0 .1 6 ß < 0 .1 6 ß 16 A 10 A TYPICAL R D S (on) = 0.095 £2 AVALANCHE RUGGED TECHNOLOGY

logitech x 530

Abstract: JU-226A273FC nokia 1200 lcd television lg ultra slim samsung colour tv kit circuit diagram nokia 1200 circuit diagram hp BIOS 2.6 nokia mobile phone 1600 circuit diagram tv lg ultra slim mouse genius diagram
Contextual Info: Acer TravelMate 530 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: VD.T24V5.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 530 service guide.

"7 segment display" 3102

Contextual Info: Temperature measurement with current output and PNP/NPN transistor switching output output 2 reprogrammable as switching output TS-530-LI2UPN8X-H1141-L016 • ■ ■ ■ Rotatable after mounting the process connection Reading of adjusted values without tools

Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201

2SK1530

Abstract: 2SJ201
Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SJ201

74149

Abstract: TFK 19 001 TBA520 colour television block diagram tfk 332 aj60 TFK 108 TFK diodes application Y178
Contextual Info: TBA 530 'W Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendung: RGB-Matrix und -Vorverstärker für PAL-Farbfernsehempfänger Application: RGB matrix and pre-amplifier for PAL colour television receivers Besondere Merkmale: Features:

Contextual Info: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm Low ON-resistance: Ron = 530 m max (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) 2.1±0.1 1.7±0.1 Drain-source voltage Rating Unit

Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH PO W ER AM PLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201

Contextual Info: EPC8002 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 65 V • RDS on , 530 mΩ • ID, 2 A • Optimized eGaN FET for high frequency applications • Pb-Free (RoHS Compliant), Halogen Free EPC8002 eGaN FETs are supplied only in

Contextual Info: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm 2.1±0.1 Low ON-resistance: 1.7±0.1 Ron = 530 mΩ max (@VGS = 4 V) Ron = 310 mΩ (max) (@VGS = 10 V) Lead (Pb)-free 2.0±0.1 •

Contextual Info: Philips Semiconductors k b S 3 T 3 1 Q 031535 530 • A P X ^Pfoductspecification PNP 4 GHz wideband transistor BFQ32C N AUER PHILIPS/DISCRETE DESCRIPTION blE » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes. It is

SSM3K106TU

Contextual Info: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: 2.1±0.1 Ron = 530 mΩ max (@VGS = 4 V) 1.7±0.1 Unit VDS 20 V V VGSS ± 20 DC ID 1.2 Pulse

SSM3K106TU

Contextual Info: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: 2.1±0.1 Ron = 530 mΩ max (@VGS = 4 V) 1.7±0.1 Unit VDS 20 V V VGSS ± 20 DC ID 1.2 Pulse

Contextual Info: FQB11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Contextual Info: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: 2.1±0.1 Ron = 530 mΩ max (@VGS = 4 V) 1.7±0.1 Rating Unit VDS 20 V V VGSS ± 20 DC ID 1.2

A720 transistor

Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
Contextual Info: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.

sot62

Abstract: BUW14
Contextual Info: N AUER PHILIPS/DISCRETE bTE T> m bbSBTBl 0 C]E05b 3 =530 • APX P hilips S em roduct sp e cifica tio n Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in

Contextual Info: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.)

dvr schematic

Contextual Info: PRELIMINARY TECHNICAL DATA Preliminary Technical Data Ultra Precision Shunt-Mode Voltage Reference ADR520/525/530/540/545/550 FEATURES Ultra Compact SC70 and SOT23 Packages Temperature Coefficient: 25 ppm/؇C Max. Initial Accuracy: +0.2% Low Output Voltage Noise: 4 ␮V p-p

Contextual Info: MCP6491 7.5 MHz, Low-Input Bias Current Op Amps Features Description • Low Input Bias Current - 150 pA typical, TA = +125°C • Low Quiescent Current - 530 µA/amplifier (typical) • Low Input Offset Voltage - ±1.5 mV (maximum) • Supply Voltage Range: 2.4V to 5.5V