52S MARKING Search Results

amphenol 74868

Abstract: 903-284P-52S amphenol 349-50521
Contextual Info: 903-284P-52S NOTES: 1. MATERIALS AND FINISHES: BODYS - BRASS, GOLD PLATING CONTACT - BERYLLIUM COPPER, GOLD PLATING INSULATOR - PTFE 2. ELECTRICAL: A. IMPEDANCE: 50 OHM 3. MECHANICAL: A. DURABILITY: 500 CYCLES MIN. B. TEMPERATURE RANGE: -65 $C TO +165 $C 4. PACKAGING:

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR B1 B2 B3 C DESCRIPTION DWN DATE New HF3 51S, HF3 56S, HF3 91S Printing , new HF3 53RS New HF3 91R, HF3 93R, HF3 96R REVISED PER ECO-13-009645 HD HD BK AK UKo UKo UKo UKo 06APR2010 09JUL2010

MESFET Application

Abstract: 52s marking MARKING 52S
Contextual Info: HITACHI 3SK239A-GaAs N-Channel Dual Gate MESFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 4 1. 2. 3. 4. Source Gatel Gate2

52s marking code

Abstract: 52s marking Silicon N Channel MOSFET Tetrode
Contextual Info: Silicon N Channel MOSFET Tetrode BF 995 F o r F M and V H F T V input and m ixer sta g e s Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B F 995 MB Q 62702-F872 Q 62702-F936 S O T 143 Maximum ratings Parameter

BSP225

Contextual Info: Philips Com ponents Data sheet status Product specification date of issue November 1990 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • LOW BSP225 RDS on SYMBOL • Direct interface to C-MOS, TTL, etc. • High-speed switching

3SK177

Abstract: U7210 transistor d 2389 52S marking
Contextual Info: MES FIELD EFFECT TRANSISTOR 3SK177 RF A M P. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS • Suitable fo r use as R F a m p lifie r in U H F T V tuner. in millimeters • L o w C ,; : 0 .0 2 pF TYP.

PMST3904

Contextual Info: • Philips Semiconductors APX bb53^3]. 0D25e132 lib Product specification AMER PHILIPS/DISCRETE b?E D PMST3904 NPN switching transistor FEATURES PIN CONFIGURATION • S-mini package • Short switching time. DESCRIPTION NPN transistor in a plastic SOT323

Contextual Info: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 27 mA 7 d B m PidB T Y P IC A L A T 1.9 GHz LO W V O LT A G E : 3 Volts W ID E BAN D W ID T H : 2.9 GHz at -3 dB UPC2762T HIGH G AIN : 20 dB at 1.9 GHz (UPC2763T)

MMHZ5270BPT

Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)

52s marking code

Abstract: 52S marking marking 52s
Contextual Info: 3.5 V, 6.5 V RATED VOLTAGE SERIES 3.5 V, 6.5 V RATED VOLTAGE SERIES FSH TYPE, FYD TYPE These 3.5 V and, 6.5 V rated voltage are suitable for use in portable or battery-driven equipment. These capacitors are especially ideal as backup devices for cameras, remote controllers, headphone and

SAW MARKING CODE SOT23

Abstract: SAW MARKING CODE SOT-23 52S marking 52s marking code AZP51SG AZP52 AZP53 AZP54VG AZP51 AZP51S
Contextual Info: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input

SAW MARKING CODE SOT23

Abstract: H8 SOT-23 SOT23 marking D1G SAW MARKING CODE SOT-23 52s marking code AZP51SG marking Z6 AZP51 52S marking microtek
Contextual Info: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD431008L 1M-BIT CM OS FAST STATIC RAM 128K-WORD BY 8-BIT D escription The,uPD431008L is a high speed, low power, 1, 048, 576 bits 131,072 w ords by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

52S marking

Abstract: 52s marking code sc409
Contextual Info: INTL MICROCIRCUITS INC MAE » IMISC409 MflSOMlfl G O G C m M fl45 HflT SYSTEM CLOCK CHIP CMOS LSI PLL FREQUENCY SYNTHESIZER April 1992 Preliminary 7 - r ö PRODUCT FEA TURES PRODUCT DESCRIPTION Generates all Essential Clock Signals for the Motherboards. 3V to 7V Operating Supply Range.

pt 4515

Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7

D485505

Abstract: PD485505G-25
Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT /¿P D 4 8 5 5 0 5 LINE BUFFER 5K-WORD BY 8-BIT Description The fiPD485505 is a 5 048 words by 8 bits high speed FIFO First In First Out line buffer. Its CMOS static circuitry provides high speed access and low power consumption.

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

clarostat POTENTIOMETER

Abstract: clarostat RV4 potentiometers LA 2786 sj 2907 J-D1N clarostat cm POTENTIOMETER rheostat 25 watt 1000 ohm JAIN200P 201 200 OHM Variable Resistors Potentiometer Logarithmic Potentiometer B 203
Contextual Info: Type J Hot-Molded Panel Potentiometers F eatures _ B e n e fits - • 2.25 Watts @ 70 C . ■ 50 Ohms to 5 Megohms . ■ Multiple Sections/Concenti» Shafts . . ■ UL Approved Switches . . .

nec 424100

Abstract: upd424100 424100 424100-L upd424100-80 upd424100-80l 408L4
Contextual Info: NEC MOS INTEGRATED CIRCUII /¿ P D 4 2 4 1 0 0 , 4 2 4 1 0 0 -1 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE Description The fiPD 424100, 424100-L are 4 194 304 words by 1 bit dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

uPD4265160

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /iPD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / jtfPD42S4400L, 424400L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description T h e /iP D 4 2 S 4 4 0 0 L , 4 2 4 4 0 0 L a re 1 ,0 4 8 ,5 7 6 w o r d s b y 4 b its d y n a m ic C M O S R A M s .

Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD42S16400L; 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 w o rd s by 4 bits dyn am ic CMOS RAMs.

4218160-60

Abstract: NEC 4218160 TI42 upd4218160 NEC A2C MARKING LE50 PD4218160 IR35-207 4218160
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160,4218160 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿tPD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

424260-60

Abstract: 4275a5
Contextual Info: DATA SHEET \ I F f~ / MOS INTEGRATED CIRCUIT / uPD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode