09JUL2010 Search Results

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION B3 B4 B5 C DWN DATE Printing New HF3 46E ECR-12-003906, New HF3 43I S REVISED PER ECO-13-009645 HD BK AK AK UKo UKo UKo UKo 09JUL2010 12JAN2012 29FEB2012 18JUN2013 APVD Mark 1)

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR B1 B2 B3 C DESCRIPTION DWN DATE New HF3 51S, HF3 56S, HF3 91S Printing , new HF3 53RS New HF3 91R, HF3 93R, HF3 96R REVISED PER ECO-13-009645 HD HD BK AK UKo UKo UKo UKo 06APR2010 09JUL2010

Contextual Info: RF Signal Relays AXICOM HF3 Relay n Y-Design n Frequency range DC to 3GHz n Impedance 50Ω or 75Ω n Small dimensions 14.6x7.2x10mm n 1 form C contact (1 changeover contact) n Immersion cleanable n Low power consumption (≤140mW) Typical applications Cable modems and linecards/ CATV, Tabs, measurement and test

Contextual Info: SM1060DS1 VOLTAGE 60 V 10Amp. Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-252 D-PACK FEATURES z z z z z Low forward voltage drop High current capability High reliability

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. REVISIONS DIST HJ - P LTR DESCRIPTION E F F1 F2 New Coplanarity, Solder Pad Layout Printing REVISED PER ECO-11-005150 REVISED PER ECO-11-017072 ECR-13-009645 14JUN2013 A 0.9+0.3 3 3 2006 4° 4° 4.9 Coplanarity<=0.10mm

520100204

Contextual Info: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.

tda7851

Abstract: TDA7851A TDA-7851 AC00024 TDA785 4X72 D05AU1613 Complementary Audio Power Amplifier Flexiwatt AC00034
Contextual Info: TDA7851A 4 x 45 W MOSFET quad bridge power amplifier Features • Multipower BCD technology ■ High output power capability: – 4 x 45 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max. ■ MOSFET output power stage ■ Excellent 2 Ω driving capability

FERRITE lcc

Abstract: SOC2484
Contextual Info: 2N2484HR Hi-Rel NPN bipolar transistor 60 V, 50 mA Datasheet - production data Features 1 Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics

AXICOM Relay

Abstract: 9121
Contextual Info: T H IS IT A C O N T R O L L E D D O C UM E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N T O C H A N G E A ND T H E C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N S H O U L D BE C O N T A C T E D F OR T H E L A T E S T R E V I S I O N .

Contextual Info: SMAJ Transil Features • Peak pulse power: – 400 W 10/1000 µs – 2.3 kW (8/20 s) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types K ■ Low leakage current: – 0.2 A at 25 °C – 1 A at 85 °C Unidirectional

J2N2222

Abstract: 520100204
Contextual Info: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified

520100204

Abstract: 2N2222A* LCC SOC2222ASW
Contextual Info: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN bipolar transistor Features Parameter Value BVCEO 40 V IC max 0.8 A hFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 1 1 2 • Linear gain characteristics ■ Hermetic packages

SM1150B

Contextual Info: SM1150B VOLTAGE 150 V 1.0 A Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High Current Capability  Extremely Low Thermal Resistance  For Surface Mount Application

Contextual Info: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified

SMAJ12CA-TR

Abstract: SMAJ15CA SMAJ24CA eua code transil diode
Contextual Info: SMAJ Transil Features • Peak pulse power: – 400 W 10/1000 µs – 2.3 kW (8/20 s) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types K ■ Low leakage current: – 0.2 μA at 25 °C – 1 μA at 85 °C Unidirectional

SOC2222ASW

Abstract: SOC2222A 2N2222AUB1 5201-002-05 ESCC 5201-002 SOC2222A smd smd marking codes list 2N2222AUB add 5201 520100204
Contextual Info: 2N2222AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A hFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 • Linear gain characteristics 1 1 2 ■ Hermetic packages ■ ESCC qualified

FLEXIWATT25

Abstract: tda785 TDA7850LVH SMD L5 TDA7850LV
Contextual Info: TDA7850LV 4 x 50 W quad bridge amplifier suitable for low voltage car radio systems Data brief Features • High output power capability: – 4 x 50 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 80 W/2 Ω max. – 4 x 53 W/2 Ω @ 14.4V, 1 kHz, 10 %

TDA7851A

Contextual Info: TDA7851A 4 x 48 W MOSFET quad bridge power amplifier Datasheet  production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4  Max. – 4 x 28 W/4  @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2  Max. ■ MOSFET output power stage

TDA7851F

Contextual Info: TDA7851F 4 x 48 W MOSFET quad bridge power amplifier Datasheet  production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4  max. – 4 x 28 W/4  @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2  max. ■ MOSFET output power stage

SOC2222AHR

Contextual Info: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.

Contextual Info: 2N2484HR Hi-Rel NPN bipolar transistor 60 V, 50 mA Datasheet - production data Features 1 Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. REVISIONS DIST HJ - P LTR DESCRIPTION E F F1 F2 New Coplanarity, Solder Pad Layout Printing REVISED PER ECO-11-005150 REVISED PER ECO-13-009645 18JUN2013 3 4° 0.9+0.3 A 2006 4° 3 4.9 Coplanarity<=0.10mm 6.7 16+0.5 -0.5

Contextual Info: RF Signal Relays AXICOM Telecom-, Signal and RF Relays Sep. 07, Rev. B HF6 HF6 Relay Relay Terminal assignment n Y-Design Relay top viewDC n Frequency range n Impedance to 6GHz 50Ω n Small dimensionstype, 16x7.6x10mm Non-latching n 1 form C contact (1condition

SOC2222A

Abstract: 520100204 15mAIB 520100205R SOC2222ARHRT JANS2N2222AUB 2N2222A marking code 2N2222A* LCC SOC2222ARHRG 2N2222A st marking
Contextual Info: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 LCC-3UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.