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STMicroelectronics STL52N60DM6 N-CHANNEL 600 V, 0.084 OHM TYP.,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL52N60DM6	Cut Tape	2,460		1	1 $8.88 10 $6.068 100 $8.88 1000 $3.9325 10000 $3.9325	Buy Now
	STL52N60DM6	Digi-Reel	2,460		1	1 $8.88 10 $6.068 100 $8.88 1000 $3.9325 10000 $3.9325	Buy Now
	STL52N60DM6	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $3.6835	Buy Now
Avnet Americas	STL52N60DM6	Reel		14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $3.59366	Buy Now
Mouser Electronics	STL52N60DM6		1,994			1 $7.08 10 $6.07 100 $5.05 1000 $4.01 10000 $3.76	Buy Now
Newark	STL52N60DM6	Cut Tape	2,235		1	1 $6.83 10 $6.13 100 $5.22 1000 $3.61 10000 $3.52	Buy Now
STMicroelectronics	STL52N60DM6		1,994		1	1 $6.94 10 $5.95 100 $4.95 1000 $4.37 10000 $4.37	Buy Now

TME	STL52N60DM6				1	1 $7.68 10 $6.91 100 $6.1 1000 $4.94 10000 $4.35	Get Quote
Avnet Silica	STL52N60DM6			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STL52N60DM6			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHP052N60EF-GE3 MOSFET EF SERIES TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP052N60EF-GE3	Tube	934		1	1 $7.46 10 $7.46 100 $7.46 1000 $3.12376 10000 $3.12376	Buy Now
Vishay Siliconix SIHG052N60EF-GE3 MOSFET N-CH 600V 48A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG052N60EF-GE3	Tube	293		1	1 $7.9 10 $5.369 100 $7.9 1000 $3.3725 10000 $3.3725	Buy Now
IXYS Corporation IXFK52N60Q2 MOSFET N-CH 600V 52A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK52N60Q2	Tube			25	1 - 10 - 100 $15.454 1000 $15.454 10000 $15.454	Buy Now
Mouser Electronics	IXFK52N60Q2					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFX52N60Q2 MOSFET N-CH 600V 52A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFX52N60Q2	Tube			30	1 - 10 - 100 $15.33733 1000 $15.33733 10000 $15.33733	Buy Now
Mouser Electronics	IXFX52N60Q2					1 - 10 - 100 - 1000 - 10000 -	Get Quote

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52N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
52N60AU1 Abstract: IXSN52N60AU1 15-05J 52N60 Text: IGBT with Diode IXSN 52N60AU1 VCES IC25 VCE sat Combi Pack Short Circuit SOA Capability = 600 V = 80 A = 3V 3 2 4 Symbol Test Conditions VCES TJ = 25°C to 150°C 1 Maximum Ratings 600 miniBLOC, SOT-227 B 1 V 2 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A	Original	PDF	52N60AU1 OT-227 IXSN52N60AU1 IXSN52N60AU1 15-05J 52N60
52N60AU1 Abstract: No abstract text available Text: IGBT with Diode IXSN 52N60AU1 Combi Pack Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 80 A = 3V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 A VGES	Original	PDF	52N60AU1 52N60AU1
52N60Q2 Abstract: IXFK52N60Q2 Text: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFK 52N60Q2 IXFX 52N60Q2 Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±30	Original	PDF	52N60Q2 728B1 52N60Q2 IXFK52N60Q2
Untitled Abstract: No abstract text available Text: IGBT with Diode IXSN 52N60AU1 VCES IC25 VCE sat Combi Pack Short Circuit SOA Capability = 600 V = 80 A = 3V 3 2 4 Symbol Test Conditions VCES TJ = 25°C to 150°C 1 Maximum Ratings 600 miniBLOC, SOT-227 B 1 V 2 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A	Original	PDF	52N60AU1 OT-227 IXSN52N60AU1
52N60 Abstract: 52N60Q2 IXFK52N60Q2 Text: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFK 52N60Q2 IXFX 52N60Q2 Q-Class = = = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions Maximum Ratings	Original	PDF	52N60Q2 247T9 728B1 52N60 52N60Q2 IXFK52N60Q2
IXSN52N60AU1 Abstract: No abstract text available Text: IGBT with Diode IXSN 52N60AU1 VCES IC25 VCE sat Combi Pack Short Circuit SOA Capability = 600 V = 80 A = 3V 3 2 4 Symbol Test Conditions VCES TJ = 25°C to 150°C 1 Maximum Ratings 600 miniBLOC, SOT-227 B 1 V 2 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A	Original	PDF	52N60AU1 OT-227 IXSN52N60AU1 IXSN52N60AU1
BERULUB FR 16 B Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power	Original	PDF	IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
b1113 Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14 Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2	Original	PDF	PLUS247 247TM O-247 O-264 O-268 16N60U1 24N60U1 30N60U1 62N60U1 24N60AU1 b1113 diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
40n60 igbt Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263	Original	PDF	O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
52N60A Abstract: 52N60 1XSN52N60AU1 Text: IGBT with Diode IXSN 52N60AU1 VCES I = 600 V = 80 A = 3V C25 v CE sat Short Circuit SOA Capability Symbol V CES Test Conditions T, = Maximum Ratings 25°C to 150CC V 600 Tj = 25°C to 150°C; Rge = 1 Mfi 600 A v" g e s Continuous ±20 V vy g e m T ransient	OCR Scan	PDF	52N60AU1 OT-227B, 52MB0AU1 52N60A 52N60 1XSN52N60AU1
4588d Abstract: C8750 2814H Text: □IXYS IGBT with Diode IXSN 52N60AU1 Short Circuit S O A Capability E é Test Conditions VCES Tj =25°C to150°C 600 V vCGR vGES T.J = 25° C to 150° C;’ RrP = 1 MQ BE 600 A Continuous ±20 V VGEM Transient ±30 V 'c 2 5 Tc =25°C 80 A Tc =90°C 40 A 160	OCR Scan	PDF	52N60AU1 to150 OT-227B, 52N60AU1 4588d C8750 2814H
Untitled Abstract: No abstract text available Text: QIXYS IGBT with Diode IXSN 52N60AU1 VCES I C25 vCE sat Combi Pack = 600 V = 80 A = 3V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V v CGR T, = 25°C to 150°C; RGE = 1 Mi2 600 A V GES Continuous +20 V	OCR Scan	PDF	52N60AU1 OT-227 4bflb22b

40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
30n60 Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100	OCR Scan	PDF	00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Untitled Abstract: No abstract text available Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62	OCR Scan	PDF	20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â
BTS 3900 a Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1 Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device	OCR Scan	PDF	T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	PDF	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
40N60A Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A	OCR Scan	PDF	2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
mm036 Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100 Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA	OCR Scan	PDF	DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	PDF	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
b14 smd diode Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60 Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60	OCR Scan	PDF	T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60

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52N60 Search Results

52N60 Price and Stock

STMicroelectronics STL52N60DM6

Vishay Siliconix SIHP052N60EF-GE3

Vishay Siliconix SIHG052N60EF-GE3

IXYS Corporation IXFK52N60Q2

IXYS Corporation IXFX52N60Q2

52N60 Datasheets Context Search

52N60AU1

52N60AU1

52N60Q2

Untitled

52N60

IXSN52N60AU1

BERULUB FR 16 B

7n60b

b1113

7N60B equivalent

40n60 igbt

52N60A

4588d

Untitled

40n80

30n60

Untitled

BTS 3900 a

8n80

40N60A

mm036

DSE 130 -06A

b14 smd diode