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ROHM Semiconductor MSM51V18160F-60T3-K7 IC DRAM 16MBIT PARALLEL 50TSOP
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DigiKey	MSM51V18160F-60T3-K7	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
OK International MSM51V18160F60TSKR1
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Bristol Electronics	MSM51V18160F60TSKR1		1,676			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC51V18160AFTS-70
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Bristol Electronics	TC51V18160AFTS-70		852			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC51V18160CFT60 Electronic Component
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ComSIT USA	TC51V18160CFT60		2,250			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others MSM51V18160F-60T3KR1 INSTOCK
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Chip 1 Exchange	MSM51V18160F-60T3KR1		408			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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51V18160 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MSM51V18160DSL Abstract: No abstract text available Text: E2G0131-17-61 O K I Semiconductor MSM5 1V I8 1 6 0 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESC R IPTIO N The M SM 51V18160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon gate CMOS technology. The 51V18160D / DSL achieves high integration, high-speed operation,	OCR Scan	E2G0131-17-61 MSM51VI8160P/PSL 576-Word 16-Bit MSM51V18160D/DSL heMSM51V18160D/DSLachieveshighintegration 42-pin MSM51V18160DSL	PDF
Untitled Abstract: No abstract text available Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 \|3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )	OCR Scan	51V16160A 51V18160A 116160A 118160A 256Kx4 514260B/BSL 514256C/CL 51V6800A 51V16100A 51V17100A	PDF
Untitled Abstract: No abstract text available Text: O K I Semiconductor 51V18160A 1,048,576-Word x 16-Bit DYN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The 51V18160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V18160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The 51V18160A is	OCR Scan	MSM51V18160A 576-Word 16-Bit MSM51V18160A 42-pin 50/44-pin	PDF
intel 82c51 Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288 Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160	OCR Scan	51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288	PDF
Untitled Abstract: No abstract text available Text: NN51V16160A/ 51V18160A series Fast Page Mode CMOS 1M x 16bit Dynamic RAM M x w D N /a x Preliminary Specification d e s c rip tio n The NN51V16160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga nized as 1,048,576 words by 16 bits. The NN51V16160A/18160A series is fabricated with advanced CMOS	OCR Scan	NN51V16160A/ NN51V18160A 16bit NN51V16160A/18160A 128ms NN51V18 60AXX	PDF