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    Vishay Dale CRCW080512K7FKEAC

    RES 12.7K OHM 1% 1/8W 0805
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    DigiKey CRCW080512K7FKEAC Digi-Reel 34,700 1
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    CRCW080512K7FKEAC Cut Tape 34,700 1
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    Vishay Dale CRCW080512K0JNEA

    RES SMD 12K OHM 5% 1/8W 0805
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    DigiKey CRCW080512K0JNEA Digi-Reel 19,550 1
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    CRCW080512K0JNEA Cut Tape 19,550 1
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    Vishay Dale TNPW080512K4BEEA

    RES 12.4K OHM 0.1% 0.26W 0805
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    DigiKey TNPW080512K4BEEA Reel 5,000 5,000
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    Vishay Dale CRCW080512K0FKTA

    RES SMD 12K OHM 1% 1/8W 0805
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    DigiKey CRCW080512K0FKTA Digi-Reel 2,732 1
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    CRCW080512K0FKTA Cut Tape 2,732 1
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    API Delevan 1025-12K

    FIXED IND 470NH 660MA 350MOHM TH
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    DigiKey 1025-12K Cut Tape 581 1
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    Component Electronics, Inc 1025-12K 183
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    512K Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    512KBA000631AAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KBA000631AAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KBA000631BAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KBA000631BAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KBA000828BAG Silicon Laboratories XTAL OSCILLATOR Original PDF
    512KBA000828BAG Skyworks Solutions XTAL OSCILLATOR Original PDF
    512KBA000828BAGR Silicon Laboratories XTAL OSCILLATOR Original PDF
    512KBA000828BAGR Skyworks Solutions XTAL OSCILLATOR Original PDF
    512KBD000927BAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KBD000927BAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCA000230AAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCA000230AAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCB000118BAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCB000118BAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCC000118BAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCC000118BAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCC000953BAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCC000953BAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCC000989BAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF
    512KCC000989BAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 1.8V 6SMD Original PDF

    512K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: o bq4850Y U N I T R O D E - RTC Module with 512Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a non­ volatile 4,194,304-bit SRAM organ­


    OCR Scan     		bq4850Y 512Kx8 304-bit 32-pin PDF

    character generater

    Abstract: No abstract text available
    Text: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.


    OCR Scan     		TC534200P/F 600mil 40pin 525mil 150ns 20/uA TC534200P TC534200P/F-- character generater PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte


    OCR Scan     		TMS28F040 304-BIT SMJS040-DECEMBER A0-A18 32-pin 40-pin PDF

    A18D0

    Abstract: TC534000AP
    Text: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the


    OCR Scan     		TC534000AP/AF 288words TC534000AP 150ns, TC534000AP/ 600mil 32pin 525mil A18D0 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMJ684002 512K BY 84HT STATIC RANDOM-ACCESS MEMORY _ * Single 5-V ± 10% Power Supply HJA/HKE PACKAGE TOP ViEW f • • Fast Access Time 20125/35 ns Equal Address and Chip-Enable Access Time • • • All Inputs and Outputs Are TTL-Compatible


    OCR Scan     		SMJ684002 SGMS736 36-Pin, 400-mil PDF

    Untitled

    Abstract: No abstract text available
    Text: S M J27C 040 4 1 9 4 3 0 4 -B IT U V E R A S A B LE P R O G R A M M A B L E R E A D -O N L Y M E M O R Y SGMS046A-NOVEMBER 1992- REVISEDJUNE 1995 • Organization . . . 512K x 8 Jpackage • Single 5-V Power Supply T0P V1EW • Industry Standard 32-Pin Dual-ln-llne


    OCR Scan     		SGMS046A-NOVEMBER 32-Pin 27C040-10 27C040-12 27C040-15 400-mV SMJ27C040 4194304-BIT S046A PDF

    23A512-I

    Abstract: 23A512 23LC512-I 23LC512
    Text: 23A512/23LC512 512Kbit SPI Serial SRAM with SDI and SQI Interface Device Selection Table Part Number VCC Range Dual I/O SDI Quad I/O (SQI) Max. Clock Frequency 23A512 1.7-2.2V Yes Yes 20 MHz SN, ST, P 23LC512 2.5-5.5V Yes Yes 20 MHz SN, ST, P Packages Features:


    Original     		23A512/23LC512 512Kbit 23A512 23LC512 32-byte DS25155A-page 23A512-I 23LC512-I PDF

    IS42VS16100E

    Abstract: 42VS16100E IS42VS16100E-75BLI
    Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11


    Original     		IS42VS16100E 4000-mil 60-ball 400-mil IS42VS16100E 42VS16100E IS42VS16100E-75BLI PDF

    Untitled

    Abstract: No abstract text available
    Text: SRAM 512K8 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View HIGH SPEED SRAM with REVOLUTIONARY PINOUT 36-Pin SOJ (DJ & ECJ) 36-Pin CLCC (EC) AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-95600 •MIL-STD-883 FEATURES • Ultra High Speed Asynchronous Operation


    Original     		AS5C512K8 36-Pin MIL-STD-883 compatibl60004MMA 5962-9560008MMA 5962-9560014MMA 5962-9560013MMA AS5C512K8F-45/883C AS5C512K8F-45L/883C PDF

    Untitled

    Abstract: No abstract text available
    Text: SRAM AS5C4008 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATION 32-Pin DIP (CW), 32-Pin LCC (EC) 32-Pin SOJ (ECJ) • SMD 5962-95600 • MIL STD-883 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1


    Original     		AS5C4008 32-Pin STD-883 5962-9560004MZA 5962-9560003MZA 5962-9560002MZA 5962-9560001MZA 5962-9560008MZA PDF

    Untitled

    Abstract: No abstract text available
    Text: M27W401 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ ■ Pin Compatible with M27C4001 1 Programming Time 100 µs/byte


    Original     		M27W401 512Kb M27C4001 FDIP32W PDIP32 PLCC32 TSOP32 PDF

    fm25v05-g

    Abstract: FM25V05 fm25v05g
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR FM25V05 fm25v05g PDF

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive


    Original     		AS4SD2M32 64-Mb) 133MHz TSOPII-86LD -40oC -55oC 125oC AS4SD2M32 PDF

    Untitled

    Abstract: No abstract text available
    Text: SRAM 512K32 & 512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 (Military Pinout)


    Original     		AS8S512K32 AS8S512K32A MIL-STD-883 512Kx32 AS8S512K32Q1-12/Q AS8S512K32Q1-15/Q AS8S512K32Q1-17/Q AS8S512K32Q1-20/Q AS8S512K32Q1-25/Q AS8S512K32Q1-35/Q PDF

    K4S643233H

    Abstract: K4S643233H-F
    Text: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,


    Original     		K4S643233H 32Bit 90FBGA K4S643233H-F PDF

    MS-026

    Abstract: MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512L18P MT55L512V18P
    Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM 8Mb ZBT SRAM MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • • • •


    Original     		MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 100-Pin 119-Pin 165-pin MT55L512L18P MS-026 MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512V18P PDF

    16mb HIGH-SPEED ASYNCHRONOUS SRAM

    Abstract: IBM041816CHLBC IBM043616CHLBC SA37T
    Text: . IBM043616CHLBC IBM041816CHLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation


    Original     		IBM043616CHLBC IBM041816CHLBC 16mb HIGH-SPEED ASYNCHRONOUS SRAM IBM041816CHLBC IBM043616CHLBC SA37T PDF

    SA37T

    Abstract: cq 721 IBM041816CBLBC IBM043616CBLBC
    Text: . IBM043616CBLBC IBM041816CBLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation


    Original     		IBM043616CBLBC IBM041816CBLBC SA37T cq 721 IBM041816CBLBC IBM043616CBLBC PDF

    a29040al-70

    Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
    Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current


    Original     		A29040A a29040al-70 A29040A-55 A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064 PDF

    K7Q161852A

    Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
    Text: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control


    Original     		K7Q163652A K7Q161852A 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161852A K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16 PDF

    K7Z327285M

    Abstract: No abstract text available
    Text: K7Z327285M Preliminary 512Kx72 DLW Double Late Write RAM Document Title 512Kx72 DLW(Double Late Write) RAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Device name change from Double Late Write SigmaRAM to Double Late Write RAM


    Original     		K7Z327285M 512Kx72 512Kx72 11x19 00x10 00x18 K7Z327285M PDF

    MT48LC2M32B2P

    Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
    Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


    Original     		MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 MT48LC2M32B2P MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612 PDF

    IBM0418A41NLAB

    Abstract: IBM0418A81NLAB IBM0436A41NLAB IBM0436A81NLAB
    Text: IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM . Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • Registered outputs • 30 Ω drivers


    Original     		IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crrL3325 IBM0418A41NLAB IBM0436A81NLAB PDF

    IS61WV51232BLL-10BLI

    Abstract: IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3
    Text: IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS IS61WV51232Axx) IS61/64WV51232Bxx) 90-ball IS61WV51232BLL-10BI IS61WV51232BLL-10BLI IS61WV51232BLL-10BLI IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3 PDF