Untitled
Abstract: No abstract text available
Text: HB56A840BR Series 8 ,3 8 8 ,6 0 8 -w o rd x 4 0 -b it H ig h D e n s ity D y n a m ic R A M M o d u le The HB56A840BR is a 8 M x 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM H M 5116400AS sealed in SOJ package. An outline of the HB56A840BR is 72-pin single in
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HB56A840BR
16-Mbit
5116400AS)
72-pin
HB56A840BR-6A
HB56A840BR-7A
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PDF
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5116400AJ
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time
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5116400AJ-50/-60/-70/-80
5116400ASJ-50/-60/-70/-80
0235b05
5116400AJ
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 4 M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time
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OCR Scan
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5116400AJ-50/-60/-70/-80
5116400ASJ-50/-60/-70/-80
235b05
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4 M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version
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5116400AJ-50/-60/-70/-80
5116400ASJ-50/-60/-70/-80
385from
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PDF
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MSM5116400
Abstract: MSM5116400A
Text: O K I Semiconductor 5116400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116400A is a 4,194,304-word x 4-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The 5116400A achieves high integration, high-speed operation, and low-power
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MSM5116400A_
304-Word
MSM5116400A
26/24-pin
cycles/64
MSM5116400
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HB56D836SBT-AC
Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Text: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms
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72-pin
A132BV/BU-B/BL
HB56A132SBV-B/BL
HB56A132BV/BU-C/CL
HB56A132SBV-C/CL
HB56A132BW-B/BL
HB56A132SBW-B/BL
HB56A132BW-C/CL
HB56A132SBW-C/CL
HB56A232BT-B/BL
HB56D836SBT-AC
power bank 5v
4Mx1
514400C
m514400c
473e
HM514400BS BLS
B56A
HM5116400ATS
5117800B
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )
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51V16160A
51V18160A
116160A
118160A
256Kx4
514260B/BSL
514256C/CL
51V6800A
51V16100A
51V17100A
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PDF
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m51164
Abstract: ALRS8 a1a511 A255K HM5116400ATS A8819
Text: 5116400A/AL Series 4,194,304-w ord x 4-bit Dynam ic Random Access Memory The H itachi H M 5 116400A /A L is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high perform ance and low power. The
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HM5116400A/AL
304-word
ns/70
ns/80
mW/385
mW/358
16-bit
m51164
ALRS8
a1a511
A255K
HM5116400ATS
A8819
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PDF
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HM5116400ATS
Abstract: No abstract text available
Text: HB56A472E Series 4 ,1 9 4 ,3 0 4 -w o rd X 7 2 -b it EC C High D e n s ity D y n a m ic R A M M o du le Description The HB56A472E belongs to 8 Byte DIMM (Dual In-line M em ory M odule) fam ily, and has been developed as an optimized main memory solution
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HB56A472E
116400A
16244ADGG)
B56A472E
168-pin
B56Acle.
HM5116400ATS
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56A440BR Series 4,1 9 4 ,3 0 4 -w o rd x 4 0 -b it H igh D e n s ity D y n a m ic R A M M o du le The HB56A440BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces o f 16-M bit DRAM H M 5 1 1 6 4 0 0 A S sealed in SO J p ack ag e. An outline o f the HB56A 440BR is 72-pin single in
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OCR Scan
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HB56A440BR
HB56A
440BR
72-pin
HB56A440BR-6A
HB56A440BR-7A
HB56A440BR-8A
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PDF
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514400
Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Text: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1
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P-SOJ-26/20-11
P-SOJ-26/20-52'
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-28/24-1
5116400J
5117400ASJ
5116400ASJ
5116400AJ
514400
511000 dram
ON SEMICONDUCTOR 241
bt 2411
514256
511000
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PDF
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HM5116400ATS
Abstract: No abstract text available
Text: ADE-203-179D Z 5116400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi HM5 116400A /A L is a CM OS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high perform ance and low power. The
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ADE-203-179D
304-word
HM5116400A/AL
16400A
5116400A7AL
HM5116400AS/ALS-6
HM5116400AS/ALS-7
HM5116400AS/ALS-8
HM5116400ATS/ALTS-6
HM5116400ATS/ALTS-7
HM5116400ATS
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PDF
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m51164
Abstract: UD 1208 HM5116400ATS M5116400
Text: M H ~ r 5116400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI T h e H ita c h i H M 5 1 1 6 4 0 0 A /A L is a CM O S dynamic RAM organized 4,194,304 words x 4 bits. It em ploys the m ost advanced CMOS technology fo r h ig h p e r f o rm a n c e a n d low p o w er. T h e
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OCR Scan
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HM5116400A/AL
304-word
116400A/AL
300-mil
24/26-pin
CP-24DB)
2-i/25-pin
TTP-24DA)
24-26-pin
77P-24DA)
m51164
UD 1208
HM5116400ATS
M5116400
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PDF
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DYNAMIC RAM CROSS REFERENCE
Abstract: DYNAMIC RAM dynamic ram module 5116800 hyb 511
Text: SIEM EN S Contents Contents Page Summary of Types incl. ordering codes . 9 Packing Inform
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Q67100-Q765
Abstract: 32200S-70 Q67100-Q470 94500S-70 514256B-80 Q67100-Q840 Q67100-Q914 Q67100-Q437 322120S-70
Text: SIEM EN S Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Type Ordering Code Page Q67100-Q512 Q67100-Q427 Q67100-Q428 Q67100-Q518 Q67100-Q519 Q67100-Q520 Q67100-Q526 Q67100-Q527 Q67100-Q524 Q67100-Q525 Q67100-Q521 Q67100-Q522
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511000B-60
511000B-70
511000B-80
511000BJ-60
511000BJ-70
51100QBJ-80
511000BJL-6Q
511000BJL-70
511000BL-60
511000BL-70
Q67100-Q765
32200S-70
Q67100-Q470
94500S-70
514256B-80
Q67100-Q840
Q67100-Q914
Q67100-Q437
322120S-70
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PDF
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hy5118160b
Abstract: No abstract text available
Text: 5V DIMM TYPE SIZE 8 -B y te 8M B As o f '96.3Q DESCRIPTION 1M X 64 PART NO. SPEED REF. ED O .SL H Y M 564104A X /TX 6 0 /7 0 /8 0 4K H Y 5 1 1616 4 B J /B T x 4 H Y M 564124A X /TX H Y M 5 6 4 1 00 N /T N IK H Y 5 1 1816 4 B J /B T x 4 F P M ,L 5 0 /6 0 /7 0
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64104A
64124A
HYM5641OOAX/ATX
564120X
572A124ATX
572A100TN
572A120X
64204A
64214A
64224A
hy5118160b
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56A464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module The H B 56A 464E J belongs to 8 byte D IM M D ual — S tandby m ode (T TL : 504 m W (m ax) In -lin e M e m o ry M o d u le ) fa m ily , a n d h a s b e e n B uffered input ex cep t R A S and D Q
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OCR Scan
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HB56A464EJ
304-word
64-bit
6244A
168-pin
D0000
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PDF
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