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    50A POWER TRANSISTOR FOR SMPS Search Results

    50A POWER TRANSISTOR FOR SMPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A682KE19L
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224ME01D
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    50A POWER TRANSISTOR FOR SMPS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUK453-50B

    Abstract: BUK453-50A R2d DIODE BUK453 T0220AB buk453 50B
    Contextual Info: BUK453-50A BUK453-50B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK453-50A BUK453-50B BUK453 T0220AB; M89-1138/RST BUK453-50B BUK453-50A R2d DIODE T0220AB buk453 50B PDF

    BUK455-50A

    Abstract: BUK455-50B buk455 15 1E41 DPP100-24 T0220AB
    Contextual Info: Philips Components BUK455-50A BUK455-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK455-50A BUK455-50B BUK455 M89-1155/RC BUK455-50A BUK455-50B 15 1E41 DPP100-24 T0220AB PDF

    BUK553-50B

    Abstract: BUK553-50A buk553 T0220 PACKAGE buk553 T0220AB 50A POWER TRANSISTOR FOR SMPS
    Contextual Info: Philips Components BUK553-50A BUK553-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK553-50A BUK553-50B BUK553 M89-1153/RC BUK553-50B BUK553-50A T0220 PACKAGE buk553 T0220AB 50A POWER TRANSISTOR FOR SMPS PDF

    Contextual Info: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    bb53131 0D50445 BUK453-50A BUK453-50B BUK453 inK453-50A T-39-n PDF

    BUK543

    Abstract: BUK543-50A BUK543-50B
    Contextual Info: N AMER PHILIPS/DISCRETE SSE D ODEQSÖQ 1 BUK543-50A BUK543-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    BUK543-50A BUK543-50B BUK543 PDF

    t100c

    Abstract: BUK452-50A BUK452-50B T0220AB
    Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • btS3*131 002D430 4 ■ PowerMOS transistor BUK452-50A BUK452-50B T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    002DM3Ã BUK452-50A BUK452-50B BUK452 t100c BUK452-50B T0220AB PDF

    DD 127 D TRANSISTOR

    Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
    Contextual Info: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    G0E0345 BUK443-50A BUK443-50B BUK443 ID/100 DD 127 D TRANSISTOR BUK443-50B TRANSISTOR K 135 J 50 PDF

    BUK452-50A

    Abstract: BUK452-50B T0220AB
    Contextual Info: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    002D43G BUK452-50A BUK452-50B BUK452 ID/100 T0220AB PDF

    buk443

    Abstract: KYW 30 40 diode
    Contextual Info: 5SE D N AMER P H I L IPS/DISCRETE m bbS3T31 0020345 2 PowerMOS transistor BUK443-50A BUK443-50B T - 3 ^ -0 7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    bbS3T31 BUK443-50A BUK443-50B BUK443 T-39-09 buk443 KYW 30 40 diode PDF

    BUK542

    Abstract: BUK542-50A BUK542-50B 1-B-03
    Contextual Info: N AMER PHILIPS/DISCRETE: 5SE D • bbB3T31 0G2G5fe.5 S ■ PowerMOS transistor Logic Level FET BUK542-50A BUK542-50B T~ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    bbS3T31 002Q5t BUK542-50A BUK542-50B BUK542 1-B-03 PDF

    Contextual Info: N AMER PHILIPS/DISCRETE ^ SSE D 53=131 0 0 2 0 4 3 0 4 BUK452-50A BUK452-50B PowerMOS transistor T-37-IJ GENERAL DESCRIPTION SYMBOL > « O N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    BUK452-50A BUK452-50B T-37-IJ BUK452 PDF

    Contextual Info: N AflER P H IL IP S /D IS CRETE 2SE D • bbS3T31 0Q2D330 0 ■ PowerMOS transistor BUK442-50A BUK442-50B r-39-o <? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    bbS3T31 0Q2D330 BUK442-50A BUK442-50B r-39-o BUK442 PDF

    Contextual Info: N AMER P H I L I P S / D I S C R E T E 55E D ooso4fls ? BUK455-50A BUK455-50B PowerMOS transistor r-s ^ -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    BUK455-50A BUK455-50B BUK455 bbS3T31 777ali PDF

    BUK453-50B

    Abstract: 1B05 BUK453-50A 1B-05 T0220AB D0504 buk453 bfa53
    Contextual Info: N AUER P H I L I P S / D I S C R E T E 25E D • bbSBTBl 0020445 b PowerMOS transistor BUK453-50A BUK453-50B T-3^-}| GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    bfa53T31 0G20445 BUK453-50A BUK453-50B BUK453 ID/100 1B05 1B-05 T0220AB D0504 bfa53 PDF

    Contextual Info: N AMER PHILIPS/DISCRETE 25E D ^53=131 0D20240 T • BUK426-50A BUK426-50B PowerMOS transistor G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies


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    0D20240 BUK426-50A BUK426-50B BUK426 0Q2QE44 1E-02 PDF

    BUK545-50A

    Abstract: 1E05 BUK545 BUK545-50B
    Contextual Info: N AMER PHILIPS/DISCRETE 5 SE D • fc.hS3T31 DDEOSTQ 4 ■ PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r - 3 7 -< 0 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    h53T31 BUK545-50A BUK545-50B BUK545 ID/100 1E05 BUK545-50B PDF

    BUK545-50A

    Abstract: BUK545 BUK545-50B
    Contextual Info: N AMER PH IL IP S/ DISCR ET E 5SE D fc>h53T31 DDEOSTQ 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r -3 7 -,3 < 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    h53T31 BUK545-50A BUK545-50B BUK545 ID/100 PDF

    BUK543-50A

    Abstract: BUK543 BUK543-50B
    Contextual Info: N AMER P HI LI PS /D IS CRE TE SSE D ODEQSÖQ 1 B U K 543-50A B U K 543-50B PowerMOS transistor Logic Level FET QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    BUK543-50A BUK543-50B BUK543 BUK543-50B PDF

    BUK445

    Abstract: SO-020 417K BUK445-50A BUK445-50B
    Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D • bbSBiai 00SD3aS 3 ■ PowerMOS transistor BUK445-50A BUK445-50B T -3 7 -0 ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    BUK445-50A BUK445-50B T-37-0? BUK445 ID/100 SO-020 417K PDF

    Contextual Info: N AMER PHIL I P S / D I S CR E T E 5SE D fc.b53^31 DDEOSTO 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    BUK545-50A BUK545-50B BUK545 PDF

    BUK555-50A

    Abstract: BUK555-50B T0220AB 418 NDS
    Contextual Info: N AMER PHILIPS/DISCRETE SSE J> bfciS3ci31 0 D 2 0 t 3 S m G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    bfaS3T31 0D20t3S BUK555-50A BUK555-50B BUK555 BUK555-50B T0220AB 418 NDS PDF

    BUK456-50A

    Abstract: BUK456 N25Y 15 1E41 BUK456-50B T0220AB
    Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • k b S 3 c131 002ÜSE0 5 ■ BUK456-50A BUK456-50B PowerMOS transistor T - 3 T - 13 GENERAL DESCRIPTION N-channel enhancement mode field-etfect power transistor in a plastic envelope. The device is intended for use in


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    BUK456-50A BUK456-50B BUK456 N25Y 15 1E41 T0220AB PDF

    BUK455-50A

    Abstract: BUK455 BUK455-50B T0220AB
    Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D m Ljfci53ci31 O G S O M a S 7 • PowerMOS transistor BUK455-50A BUK455-50B T-31-Ì3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    bfci53cà BUK455-50A BUK455-50B BUK455 -ID/100 T0220AB PDF

    Contextual Info: ^ 33= 131 0 0 2 0 5 2 0 25E D N AMER P H I L I P S / D I S C R E T E S BUK456-50A BUK456-50B PowerMOS transistor T - 3^-13 GENERAL DESCRIPTION SYM BO L Cfl Q > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    BUK456-50A BUK456-50B BUK456 PDF