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    1E05 Search Results

    1E05 Result Highlights (4)

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    TPD1E05U06DPYR Texas Instruments 1-channel ultra-low-capacitance IEC ESD protection diode 2-X1SON -40 to 125 Visit Texas Instruments Buy
    TPD1E05U06DPYT Texas Instruments 1-channel ultra-low-capacitance IEC ESD protection diode 2-X1SON -40 to 125 Visit Texas Instruments Buy
    TPD1E05U06QDPYRQ1 Texas Instruments Automotive 1-channel ultra-low-capacitance IEC ESD protection diode 2-X1SON -40 to 125 Visit Texas Instruments Buy
    TPD1E05U06DYAR Texas Instruments 0.5-pF, 5.5-V, ±12-kV ESD protection diode in 0402 package for High Speed Interfaces 2-SOT-5X3 -40 to 125 Visit Texas Instruments
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    1E05 Price and Stock

    Texas Instruments TPD1E05U06DPYR

    TVS DIODE 5.5VWM 14VC 2X1SON
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    DigiKey TPD1E05U06DPYR Cut Tape 190,710 1
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    Bristol Electronics TPD1E05U06DPYR 136,045
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    TPD1E05U06DPYR 3,932
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    TPD1E05U06DPYR 860 23
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    TDK Corporation CGA1A2C0G1E050C030BA

    CAP CER 5PF 25V C0G 0201
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    DigiKey CGA1A2C0G1E050C030BA Digi-Reel 70,123 1
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    TDK Corporation C0603C0G1E050C030BA

    CAP CER 5PF 25V C0G 0201
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    DigiKey C0603C0G1E050C030BA Digi-Reel 28,400 1
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    TDK Corporation C0603C0G1E050C030BG

    CAP CER 5PF 25V C0G 0201
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    DigiKey C0603C0G1E050C030BG Cut Tape 12,067 1
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    C0603C0G1E050C030BG Digi-Reel 12,067 1
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    UMW TPD1E05U06DPYR

    TVS DIODE 5VWM 15VC 2X1SON
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    DigiKey TPD1E05U06DPYR Digi-Reel 10,000 1
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    1E05 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1E05UM Altech 1E05UM 0.5ACIRCUIT BREAKER 3 CHA Original PDF

    1E05 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Cross-reference

    Abstract: TE CONNECTIVITY jack socket socket 2011 2-1437012-4
    Text: Instruction Sheet 408-8438 29 SEP 11 Rev B Jack Socket Assembly Install jack socket and  attach lockwasher and  nut. For use with 1.57 [.062] thick panel. 408-8438 was 1E05406 A 408-8438 (was 1E05406 A) 29 SEP 11 Rev B 29 SEP 11 Rev B 3.89 ±0.05 [.153 ±.002]


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    1E05406 609Electronics Cross-reference TE CONNECTIVITY jack socket socket 2011 2-1437012-4 PDF

    tyco

    Abstract: jack socket Tyco Electronics pa 2004 Cross-Reference
    Text: 408-8435 408-8435 408-8435 02 DEC 04 Rev A 02 DEC 04 Rev A 02 DEC 04 Rev A was 1E05407 A Jack Socket Assembly Install jack socket and 3.89+0.05 [.153+.002] Dia. Holes in Panel (was 1E05407 A) Jack Socket Assembly Install jack socket and 3.89+0.05 [.153+.002]


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    1E05407 tyco jack socket Tyco Electronics pa 2004 Cross-Reference PDF

    AOD5B60

    Abstract: No abstract text available
    Text: AOD5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt


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    AOD5B60D AOD5B60D 1E-06 1E-05 AOD5B60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14292 Revision. 6 Product Standards MOS FET FJ3P02100L FJ3P02100L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0 For Load-switching 0.2 3 2.0 0.25  Features 1  Low drain-source ON resistance:RDS(on)typ. = 12.0m (VGS = -2.5 V)


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    TT4-EA-14292 FJ3P02100L PDF

    Untitled

    Abstract: No abstract text available
    Text: VSKDS400/045 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996


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    VSKDS400/045 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    JEDEC-JESD47

    Abstract: vs-30pt100
    Text: VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A FEATURES Base cathode • 175 °C high performance Schottky diode • Very low forward voltage drop 2 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency


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    VS-30PT100 O-247AC 2002/95/EC JEDEC-JESD47 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 JEDEC-JESD47 vs-30pt100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14765 Revision. 1 Product Standards MOS FET FJ3P01130L FJ3P01130L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0  Application 0.2 3  Battery FET  Load switch 2.0 0.25  Features Low drain-source ON resistance:RDS(on)max. = 10.0mΩ (VGS = -3.5 V)


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    TT4-EA-14765 FJ3P01130L PDF

    SEMISOUTH

    Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


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    ASJD1200R085 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R085 O-247 ASJD1200R085 SEMISOUTH JFET semisouth SiC JFET semisouth JFET PDF

    in4577

    Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
    Text: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient


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    150mA CLM2950 CLM2951 LP2950/LP2951 CLM2951 1E-28 in4577 CLM2950ACN-X CLM2950CN-X CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X PDF

    Untitled

    Abstract: No abstract text available
    Text: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms


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    PDF

    BUK542

    Abstract: BUK542-100A BUK542-100B
    Text: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL


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    711QSSb BUK542-100A/B -SOT186 BUK542 -100A -100B BUK542-100A BUK542-100B PDF

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B PDF

    BUK543

    Abstract: BUK543-60A BUK543-60B TTA10
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack


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    BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10 PDF

    BUK104-50L

    Abstract: BUK104-50S BUK104-50US
    Text: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving


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    711002b D0b3fl43 BUK104-50L/S BUK104-50LP/SP pK104-50L/S Ips/lps25 BUK104-60L/S BUK104-50L BUK104-50S BUK104-50US PDF

    KIMD

    Abstract: 1400W Diode RJ 4B HFAN-08 TOSA CWDM
    Text: 19-6025; Rev 0; 9/11 EVALUATION KIT AVAILABLE MAX3711 125Mbps to 3.125Gbps Integrated Limiting Amplifier/ Laser Driver with Dual-Loop Power Control General Description Benefits and Features The MAX3711 limiting amplifier and laser driver provides a highly integrated, low-cost, high-performance PMD


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    MAX3711 125Mbps 125Gbps KIMD 1400W Diode RJ 4B HFAN-08 TOSA CWDM PDF

    RG305

    Abstract: diode 10a 400v
    Text: AOT10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt


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    AOT10B60D O-220 AOT10B60D 1E-06 1E-05 RG305 diode 10a 400v PDF

    BUK443

    Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
    Text: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    711Dfi2b BUK443-60A/B OT186 BUK443 BUK443-60A BUK443-60B TRANSISTOR C 557 B PDF

    JDP2S05FS

    Abstract: No abstract text available
    Text: JDP2S05FS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05FS Unit:mm UHF~VHF Band RF Switch Applications 0.6±0.05 A 0.1 0.8±0.05 Low series resistance: rs = 1.5 Ω typ. Low capacitance: CT = 0.32 pF (typ.) Characteristics 0.07 Absolute Maximum Ratings (Ta = 25°C)


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    JDP2S05FS JDP2S05FS PDF

    480 diode

    Abstract: No abstract text available
    Text: Date:- 9th May, 2013 Data Sheet Issue:- A1 Provisional Data Rectifier Diode Types W5139T#420 to W5139T#480 Development Type No.: WX377T#480 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4200-4800


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    W5139T WX377T 480 diode PDF

    T0258HF65G

    Abstract: No abstract text available
    Text: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C


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    T0258HF65G T0258HF65G PDF

    E137938

    Abstract: 3E50 1E35 1E125UM
    Text: Standard Pack: 12 Weight: 0.3A - 32A 1.8kg 3.97 lb. 40A - 63A 1.98kg (4.37 lb.) Two Pole Standard Pack: 6 Weight: 0.3A - 32A 1.8kg (3.97 lb.) 40A - 63A 1.98kg (4.37 lb.) Rated Current 0.3A 0.5A 0.75A 0.8A 1.0A 1.6A 2.0A 2.5A 3.0A 3.5A 4.0A 5.0A 6.0A 8.0A


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    E137938 UL508 1E03UM 1E05UM 1E075UM 1E10UM 1E12UM 1E125UM 1E13UM 1E15UM E137938 3E50 1E35 PDF

    R1223N252A

    Abstract: R1223N332H CD105 HAT1020R R1223N R1223N152H R1223N332A RB491D Si3443DV
    Text: 12345 ‘99.12.8 PWM/VFM step-down DC/DC Converter R1223N Series n OUTLINE The R1223N Series are PWM step-down DC/DC Converter controllers with low supply current by CMOS process. Each of these ICs consists of an oscillator, a PWM control circuit, a reference voltage unit, an error amplifier,


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    R1223N R1223N332B 100mA) R1223N252A R1223N332H CD105 HAT1020R R1223N152H R1223N332A RB491D Si3443DV PDF

    PD2111

    Abstract: 403CNQ100PBF 403CNQ 40HF P460
    Text: Bulletin PD-21111 12/05 403CNQ100PbF SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Major Ratings and Characteristics Characteristics Description/ Features Values Units IF AV Rectangular 400 A VRRM 100 V 25,500 A


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    PD-21111 403CNQ100PbF 200Apk, 403CNQ. PD2111 403CNQ100PBF 403CNQ 40HF P460 PDF

    CME7660-000

    Abstract: CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000
    Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier and ZBD designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction


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    J-STD-020) 200847C CME7660-000 CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000 PDF