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    BUK545-50A

    Abstract: BUK545 BUK545-50B
    Text: N AMER PH IL IP S/ DISCR ET E 5SE D fc>h53T31 DDEOSTQ 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r -3 7 -,3 < 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF h53T31 BUK545-50A BUK545-50B BUK545 ID/100

    D 1398 Transistor

    Abstract: d 1398 BLV98 32Q1 ci 1404
    Text: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.


    OCR Scan     		PDF bfci53Ii31 D013b3b BLV98 OT-171 BLV98 D 1398 Transistor d 1398 32Q1 ci 1404