5089 SILICON NPN TRANSISTOR Search Results

sot-23 Marking 3D

Abstract: KST5088 KST5089 5089 silicon npn transistor transistor 5d
Contextual Info: KST5088/5089 KST5088/5089 Low Noise Transistor 2 1 SOT-23 NPN Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088

KST5088

Abstract: KST5089 MARK 5D SOT
Contextual Info: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088

KST5088

Abstract: KST5089
Contextual Info: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088

MARKING 5D NPN

Abstract: MARK 5D SOT sot-23 Marking 3D Kst5089
Contextual Info: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088

dual sot363

Abstract: CMKT5089M10 C9M0
Contextual Info: CMKT5089M10 Central TM Semiconductor Corp. SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two 2 individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAminiTM device is

Contextual Info: Central CMKT5089M10 Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL NPN SILICON MATCHED hpE TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two ¿ individual, iso­ lated 5089 NPN silicon transistors with matched hpE- This ULTRAmini™ device is mapufactured by

sot-363 MARKING l0

Contextual Info: Central CMKT5089M10 SURFACE MOUNT ULTRAmini DUAL NPN SILICON MATCHED hpE TRANSISTORS Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two individual, isolat­ ed 5089 NPN silicon transistors with matched hpE- This ULTRAmini™device is manufactured by

2n508

Abstract: 2N5086 2N5088 2N5089 2N5087 2N5089 power
Contextual Info: 2N5086 2N5088 2N5087 2N 5089 PHP . NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS -%. -C•-'■!■- -% Jy , I CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN ÂP LOW NOISE PREAMPLIFIER CIRCUITS.

100khz 5v transistor npn

Abstract: 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF
Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Cllector-Base Voltage :KST5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two 2 individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAmini device is manufactured by the epitaxial

2N5088

Abstract: 2N5089 2N5088 equivalent 2n5088 transistor transistor 2N5088 2N5089 equivalent transistor amplifier 5v to 15v 5089 silicon npn transistor 2N4403 NPN Transistor transistor 2n5088 equivalent
Contextual Info: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage : KST5088 : KST5089 Collector-Emitter Voltage : KST5088 : KST5089 Emitter-Base Voltage Collector Current

transistor H-R

Abstract: KST5088 KST5089 marking SAI
Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit - Collector-Base Voltage VcbO KST5088 KST5089 Collector-Emitter Voltage 35 30 . V ce O KST5088 KST5089 Emitter-Base Voltage

2n5088

Abstract: 2N5089 2n6088 transistor 2N5088 2n5088 transistor 2N608
Contextual Info: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088: 25V • Collector Dissipation: Pc max '=625mW ABSOLUTE MAXIMUM RATINGS <TA=25t:) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

100khz 5v transistor npn

Abstract: KST5088 KST5089 Transistor marking 0.5 marking code SJ low vce transistor fairchild marking
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST5088/5089 LOW NOISE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage : KST5088 : KST5089 C ollector-E m ltter Voltage : KST5088 : KST5089 Em itter-Base Voltage C ollecto r C urrent

2N5088

Abstract: 2N5089 100khz 5v transistor npn 2n5088 transistor TRANSISTOR D 471 transistor amplifier 5v to 15v transistor CR NPN 2N5089 transistor
Contextual Info: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2NS088: 30V 2N5089: 25V • Collector Dissipation: Pc m ax =625m W V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4 .5 50 625 150 —55^-* 1 5 0

2NS089

Abstract: 2n 5088 transistor 2N5088 STC 5089
Contextual Info: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N5088: 30V 2NS089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4.5 50 62 5 150 -5 5 ^ 1 5 0

2N508

Abstract: 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

2n508

Abstract: 2n5088
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

2n5088 transistor

Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0

Contextual Info: IL CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M ark in g C M BT5088 = 1Q CM BT5089 = 1R _3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors

c 5088

Abstract: CMBT5088 CMBT5089
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS

C9M0

Abstract: MARKING CODE c9m0 SOT363
Contextual Info: Central CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT-363 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage