336E-01
Abstract: No abstract text available
Text: Order this data sheet by MRF10005H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10005H* Microwave Power Transistor 5 Watt NPN 960-1215 MHz Designed for CW and long pulsed common base amplifiers. C P liO Guaranteed Performance at 1215 MHz - Output Power = 5 Watts CW
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MRF10005H*
MRF10005HX
MRF10005HXV
MRF10005HS
MRF10005HC
336E-02
MRF10005H/D
PHX31248-1
MRF10005H/D
336E-01
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40L40CW
Abstract: 40L45CW IRFP460 TIO 872-M
Text: Bulletin PD-20566 rev. B 07/02 40L40CW 40L45CW SCHOTTKY RECTIFIER 2 x 20 Amps Description/ Features Major Ratings and Characteristics Characteristics 40L.CW Units IF AV Rectangular waveform 40 A 40 - 45 V IFSM @ tp = 5 µs sine 1240 A VF 0.42 V VRRM The 40L.CW center tap Schottky rectifier has been optimized
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PD-20566
40L40CW
40L45CW
O-247
O-247AC
40L40CW
40L45CW
IRFP460
TIO 872-M
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Untitled
Abstract: No abstract text available
Text: What H EW LETT mUtíM PACKARD T is/i 5 mm Precision Optical Performance White LEDs Technical Data IIP S u n P o w e r S e r ies HLM P-CW 15 HLM P-CW 16 HLM P-CW 30 HLM P-CW 31 F e a tu r e s D e sc r ip tio n • H ighly L um inous W h ite E m issio n • E m issio n Color: 0 .3 1 , 0.32
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T-13/4
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pj 3059
Abstract: UG-704 UG-709 UG-573 HN-P-8U UG-556 UG-706 PJ-55 PJ59 1E54
Text: IMilitary Cross Reference M IL IT A R Y J IS N U M B ER N U M B ER CW- i 23/U | 8N C -C for fem ale C W - I2 3 A /U | 8N C -C (for fem ale) L DD K ¡ P a rt no ! j PAG E 2001 CW- 155/U BNC-C(for fem ale) - C W - I5 5 A /U BNC-C(for fem aie) 2565 CW- 1S9/U
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155/U
CW-282/U
M-358
-359A/U
M-23329/3-01-03
M-23329/3-05
M-23329/3-06
M-23329/3-07
M-23329/3-08
23329/3-I
pj 3059
UG-704
UG-709
UG-573
HN-P-8U
UG-556
UG-706
PJ-55
PJ59
1E54
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FS 400 R 12 KF4 61,5 61,5 M6 13 190 31,5 CX W V U 2,8x0,5 171 57 CU CY CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy Cz Gx Gy
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FS300R16KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 16 KF4 61,5 61,5 M6 13 190 171 57 2,8x0,5 U V CX CU CY W CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy
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FS400R
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FS 400 R 12 KF4 61,5 61,5 M6 13 190 31,5 CX W V U 2,8x0,5 171 57 CU CY CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy Cz Gx Gy
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Untitled
Abstract: No abstract text available
Text: TSDF02830YL Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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TSDF02830YL
OT-363L
D-74025
02-May-05
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Untitled
Abstract: No abstract text available
Text: TSDF02830YL Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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TSDF02830YL
OT-363L
08-Apr-05
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14163
Abstract: T-14163 PAIRGAIN 850C
Text: T1/CEPT/ISDN PRI Interface Transformer Turns Ratio + 5% PARAMETER OCL (Primary) 1:1.15CT & 1CT:2CT MIN. MAX. 1.5 & 2.0 UNITS mH Leakage Inductance 0.8 & 0.6 µH Capacitance (CW/W) 40 & 45 pF Primary DC Resistance 0.9 & 1.0 Ohms Secondary DC Resistance
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-400C
T-14163
14163
T-14163
PAIRGAIN
850C
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7094
Abstract: 175MC
Text: 7094 Beam Power Tube FORCED-AIR COOLED AT MAXIMUM RATINGS 500 WATTS CW INPUT IC A S UP TO 60 Me 335 WATTS CW INPUT (IC A S ) UP TO 17 5 Me GENERAL DATA E le c t r ic a l: H eater, f o r U n ip o t e n t ia l Cathode: V o )ta g e (AC o r DC) .
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l75Mc
92CS-950IRI
9500RI
92CM-M045RI
II046RI
7094
175MC
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ctk 25 4 tube
Abstract: ctk 15 2 tube THALES tube ctk 25 thales THALES tube ctk 25 triode ctk 5-1 ctk 25 35 15 THALES tube ctk 15
Text: INDUSTRIAL RF HEATING CTK 5-1 CTK 5-2 High-µ triodes 10 kW Output power : 10 kW in CW mode Anode voltage : 7.2 kV Anode dissipation : 6 kW Frequencies up to 150 MHz Water cooled INDUSTRIAL RF HEATING T he CTK 5-1 and CTK 5-2 are highpower, high-µ triodes designed
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atc100B102J
Abstract: atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N MRF6V2010NR1 A113 A114 A115 C101
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V2010N
MRF6V2010NR1
MRF6V2010NBR1
MRF6V2010NR1
atc100B102J
atc100b102jt50x
ATC200B393KT50XT
ATC200B223KT50XT
MRF6V2010N
A113
A114
A115
C101
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MRF6V2300NB
Abstract: MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N MRF6V2300NR1
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 2, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2300NR1 MRF6V2300NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V2300N
MRF6V2300NR1
MRF6V2300NBR1
MRF6V2300NR1
MRF6V2300NB
MRF6V2300NBR1
A113
A114
A115
AN1955
C101
JESD22
MRF6V2300N
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ATC100B910
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with
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MRF6V2010N
MRF6V2010NR1
MRF6V2010NBR1
MRF6V2010NR1
ATC100B910
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250GX-0300-55-22
Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with
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MRF6V2010N
MRF6V2010NR1
MRF6V2010NBR1
MRF6V2010NR1
250GX-0300-55-22
ATC100B102JT50XT
B10T
1812SMS-82NJ
ESMG
2743021447
atc100b6r2
MRF6V2010N
MRF6V2010NB
MRF6V2010NBR1
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transistor P239
Abstract: P239 transistor P239 045-CF 865 RF transistor P-239 MAPLST0810-045CF
Text: RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 45W, 26V 5/21/04 MAPLST0810-045CF Preliminary Features Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC:
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MAPLST0810-045CF
960MHz,
26VDC:
900MHz
P-239
transistor P239
P239 transistor
P239
045-CF
865 RF transistor
P-239
MAPLST0810-045CF
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PE7101
Abstract: No abstract text available
Text: SPECIFICATIONS FREQUENCY RANGE: DC TO 1,00 0 MHz VSWR: 1.60:1 MAXIMUM INSERTION LOSS: .7 0 dB ISOLATION: 50 dB MINIMUM NOMINAL IMPEDANCE: 7 5 OHMS POWER HANDLING CAPACITY: 5 WATTS CW, COMMON TO SWITCHED PORTS SWITCHED PORTS TERMINATED , 1 / 2 WATT SWITCHED PORTS TO COMMON
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PE7101
PE7101
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transistor 30054
Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
Text: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications
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thales itk 5-1
Abstract: pressure thales thales ITK 2-1 itk 5-1 triode TRIODE itk 5-1 P391 TRIODE itk 2-1
Text: INDUSTRIAL RF HEATING ITK 5-1 Water cooled triode 13 kW Output power: 13 kW in CW mode Anode voltage: 7.2 kV Anode dissipation: 6 kW Frequency up to 150 MHz INDUSTRIAL RF HEATING T he ITK 5-1 is a RF power triode designed specifically for industrial applications.
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2500AT43A0100
Abstract: Antennas
Text: "High Frequency Ceramic Solutions" 2.5GHz Chip Antenna with No GND clearance required P/N 2500AT43A0100 Page 1 of 5 Detail Specification: 10/28/2013 General Specifications 2500AT43A0100 Part Number 2W max. CW Input Power 2450 - 2550 Operating Temperature
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2500AT43A0100
500pcs
2500AT43A0100
Antennas
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XF3506-ER9
Abstract: 208H XF3506
Text: 1. M echanical D im ensions: 2. Sch em atic: C 5 .8 4 Max 8 SEC 1 o- o 5 PRI o 6 4 o- X o Shield •CD o 7 o Csi 3. E lectrical Specification s: OCL: Pins 4 -1 350uH Typ @100KHz 0.1V LL: Pins 4 -1 450nH Typ @100KHz 0.1V, Short all else CW/W: Pins 4 - 5 3pF Typ 100KHz 0.1V Shld Floating
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XF3506â
350uH
100KHz
450nH
MIL-STD-202G,
UL94V-0
E151556
XF3506-ER9
208H
XF3506
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TRIODE itl
Abstract: INDUSTRIAL RF HEATING itl 2-1 ELECTRON TUBE 10 thales TRIODE itl 5 itl 2-1 TRIODE itl 1-2 "Power Triode" TRIODE itl 5-1 K1-AT
Text: INDUSTRIAL RF HEATING ITL 2-1 Forced-air cooled triode 5 kW Output power: 5 kW in CW mode Anode voltage: 7.2 kV Anode dissipation: 1.5 kW Frequency up to 160 MHz INDUSTRIAL RF HEATING T he ITL 2-1 is a RF power triode designed specifically for industrial applications.
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. REVISIONS DI ST EY 45 LTR DESCRIPTION REV; EC 0230-0036-95 DATE DUN APVD 3 -2 0 -9 5 BHS cw MATERIAL: TERMINAL- LEAD PLATED, COPPER-TINZINC-LEAD ALLOY.
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09MAY94
amp23G44
p/amp23644/edmnnod
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