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Catalog Datasheet	MFG & Type	PDF	Document Tags
atc100B102J Abstract: atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N MRF6V2010NR1 A113 A114 A115 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with	Original	PDF	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 atc100B102J atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N A113 A114 A115 C101
RF1000LF Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in	Original	PDF	MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 RF1000LF RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
ATC100B102JT50XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in	Original	PDF	MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT
47nj capacitor Abstract: RF600 mcrc1 250GX-0300-55-22 Fair-Rite Products multicomp chip resistor ATC100B B06TJLC CDR33BX104AKYS ds2054 Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 3, 12/2008 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in	Original	PDF	MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 47nj capacitor RF600 mcrc1 250GX-0300-55-22 Fair-Rite Products multicomp chip resistor ATC100B B06TJLC CDR33BX104AKYS ds2054
Fair-Rite bead Abstract: AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in	Original	PDF	MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 Fair-Rite bead AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in	Original	PDF	MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1
B10T Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with	Original	PDF	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 B10T multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22
ATC100B910 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with	Original	PDF	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 ATC100B910
250GX-0300-55-22 Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with	Original	PDF	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 250GX-0300-55-22 ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1
ATC200B103KT50XT Abstract: ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in	Original	PDF	MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC200B103KT50XT ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF
250GX-0300-55-22 Abstract: ATC100B102JT50XT Text: Freescale Semiconductor Technical Data Document Number: MMRF1012N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1012NR1 Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in	Original	PDF	MMRF1012N MMRF1012NR1 250GX-0300-55-22 ATC100B102JT50XT
Arlon CuClad PCB board material Abstract: ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 2, 8/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with	Original	PDF	MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 Arlon CuClad PCB board material ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM