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    Bourns Inc 4604X-101-103LF

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    Bourns Inc 4604X-101-101LF

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    Bourns Inc 4604X-101-392LF

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    Bourns Inc 4604X-101-682LF

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    Bourns Inc 4614X-101-472LF

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    4X101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oximeter

    Abstract: PDV-C173SM
    Text: PDV-C173SM Photodiode in Plastic Surface Mount Package PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .079 [2.00] .043 [1.10] CATHODE MARK .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]


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    PDF PDV-C173SM PDV-C173SM 4x10-14 660nm oximeter

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    hamamatsu c1000

    Abstract: A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm
    Text: HIGH-SPEED GATED IMAGE INTENSIFIER UNITS C7244, C7245 Capturing still images of high-speed phenomena! C-mount adapter is optional. The Hamamatsu C7244 and C7245 are high-speed gated image intensifier units developed specifically for imaging of highspeed phenomena occurring at low light levels. These image intensifier units consist of an image intensifier head and its controller with a built-in high voltage power supply. The image intensifier head easily connects to the front of a CCD camera to configure a high-speed shutter camera that allows capturing still images of high-speed phenomena at any desired timing. The C7244


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    PDF C7244, C7245 C7244 C7245 C7244 S-164-40 TAPP1027E01 hamamatsu c1000 A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm

    Untitled

    Abstract: No abstract text available
    Text: Photodiode in Plastic Surface Mount Package PDB-C171SM PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .043 [1.10] CATHODE MARK .079 [2.00] .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]


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    PDF PDB-C171SM PDB-C171SM

    ford fiesta

    Abstract: CAR ALTERNATOR REGULATOR 24 volt IR223X electric motor using float control future enhancement of DC MOTOR SPEED CONTROL CAR ALTERNATOR REGULATOR 3 phase motor soft starter with two SCR
    Text: The Power Conversion Process as a Prosperity Machine Part II — Power Semiconductor Road Maps by Alex Lidow, CEO International Rectifier Last year, I prepared a paper about the role of power conversion in the broadest possible context: power conversion as an instrument for change [1]. To recap very briefly: the


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    PDF 4X1012 352X109 7X109 1X109 8X109 4X109 9X109 5X109 ford fiesta CAR ALTERNATOR REGULATOR 24 volt IR223X electric motor using float control future enhancement of DC MOTOR SPEED CONTROL CAR ALTERNATOR REGULATOR 3 phase motor soft starter with two SCR

    photovoltaic photoconductive

    Abstract: PDI-C172SMF
    Text: PDI-C172SMF Photodiode in Plastic Surface Mount Package PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .079 [2.00] .043 [1.10] CATHODE MARK .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]


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    PDF PDI-C172SMF PDI-C172SMF 4x10-14 660nm photovoltaic photoconductive

    Untitled

    Abstract: No abstract text available
    Text: Photodiode in Plastic Surface Mount Package PDB-C171SM PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .079 [2.00] .043 [1.10] CATHODE MARK .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]


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    PDF PDB-C171SM PDB-C171SM

    tektronix 463

    Abstract: LVDS-008 10G BERT GETEK FR4 AN-81 national ROGERS4350 Amphenol r2100 1GHz tyco TR30 Teradyne connector
    Text: LVDS オーナーズ・マニュアル 第3版 2004 年 12 月 エンジニアがオーナーズ・マニュアルを手にするのはいつも最後です。エンジニアは説明書を読 まなくとも、自分の知識や技術で製品を使いこなせると考えています。確かに私の経験でも、直感


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD4137-XXX TECHNICAL DATA DATA SHEET 4137, REV. - High CTR Optocoupler Features: • • • • • LSTTL Compatible Low Input Current Open Collector Output High Current Transfer Ratio Available in DIP and SOIC Packages -411 DIP


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    PDF SHD4137-XXX

    stm cl-90

    Abstract: GR-1244 GR-253 MT90401 ZL30402 ZL30407 ZL30407QCC ZL30410 G735
    Text: ZL30407 SONET/SDH Network Element PLL Data Sheet Features March 2004 • Meets requirements of GR-253 for SONET Stratum 3 and SONET Minimum Clocks SMC • Meets requirements of GR-1244 for Stratum 3 • Meets requirements of G.813 Option 1 and 2 for SDH Equipment Clocks (SEC)


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    PDF ZL30407 GR-253 GR-1244 ZL30407 stm cl-90 MT90401 ZL30402 ZL30407QCC ZL30410 G735

    1550nm photodiode nep

    Abstract: photodiode 1550nm nep 35PD3M-TO photodiode responsivity 1550nm Photodiode, 1550nm NEP InGaAs Photodiode 1550nm 35PD3M InGaas PIN photodiode, 3mm
    Text: Large Area InGaAs p-i-n Photodiode 35PD3M-TO The 35PD3M-TO series of InGaAs photodiodes has a 3mm-diameter photosensitive region. Applications include high sensitivity instrumentation and sensing. Class A devices feature very low dark current and high dynamic impedance. High reliability is assured through planar,


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    PDF 35PD3M-TO 35PD3M-TO 1300nm 1550nm 5x10-14 2x10-13 4x1012 5x1012 -40oC 1550nm photodiode nep photodiode 1550nm nep photodiode responsivity 1550nm Photodiode, 1550nm NEP InGaAs Photodiode 1550nm 35PD3M InGaas PIN photodiode, 3mm

    PDB-C145

    Abstract: No abstract text available
    Text: Plastic Photodiode Packages with Leads PDB-C145 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .098 [2.49] .043 [1.09] 2X .354 [9.0] MIN ANODE MARK .020 [0.51] .016 [0.41] CATHODE Ø.067 [1.70] 48° VIEWING ANGLE R.034 [0.40] .008 [0.20] 2X .006 [0.15]


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    PDF PDB-C145 PDB-C145

    Untitled

    Abstract: No abstract text available
    Text: Photodiode in Plastic Surface Mount Package PDI-C172SMF PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .158 [4.00] .079 [2.00] .043 [1.10] CATHODE MARK .019 [0.48] CATHODE 2X .020 [0.51] .085 [2.15] 130° VIEWING ANGLE .197 [5.00] .158 [4.00] .173 [4.40]


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    PDF PDI-C172SMF PDI-C172SMF 4x10-14 660nm

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD4134-XXX TECHNICAL DATA DATA SHEET 4134, REV. - High Speed CMOS Optocoupler Features: • • • • • • Wide Operating Range 4.5V to 20V 300ns propagation delay 5Mbd Typical Signal Rate Low Input Current (1.6mA to 1.8mA)


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    PDF SHD4134-XXX 300ns

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    P819

    Abstract: P1026 p2532-01 P397 12x101 P394A
    Text: HAMAMATSU CORP 11E D m 4 2 2 TbCH 0002720 =1 Ml PbS Photoconductive Cells Characteristics Type No. Out­ line No. /P.28 \ I 29/ Package Window Material Effective Sensitive Area Size Effective Sensitive Area Measure­ ment Temp. mm (mm2) IR Cutoff Wave­


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    PDF P394A P3258 P394R P3226 5X104 3X105 1X105 3X104 P819 P1026 p2532-01 P397 12x101

    Untitled

    Abstract: No abstract text available
    Text: BPV23FL y m m f _ ▼ Vishay Telefunken Silicon PIN Photodiode Description BPV23FL is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAIAs IR emit­


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    PDF BPV23FL BPV23FL 20-May-99

    HgCdTe

    Abstract: PA100 ZnSe judson PA-100
    Text: E C U I H C T I Z J I v I C J UDSON 3TE J> . S r ie S • 303Db05 00 00235 3 M J U D Short-Wave Mercury Cadmium Telluride Detectors 2 to 5 jam 7-m-m Figure 24-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors General J15TE Series "Short-Wave" detectors


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    PDF 303Db05 J15TE J1435-Ì J15TE2-66S J15TE3-66S J15TE2 J15TE3 5-66S HgCdTe PA100 ZnSe judson PA-100

    MMI PAL14L8

    Abstract: PAL20L10 MMI PAL20X10 MMI MMI DATE CODE PAL 53RA1681 PAL16R6 MMI
    Text: M ilitary PAL Devices Q uality Programs The Military Product Division quality system conforms to the following Mil-Standards: Mil-M-38510, Appendix A, “Product Assurance Program" Mil-Q-9858, "Quality Program Requirements” Mil-l-45208, "Inspection System Requirements”


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    PDF Mil-M-38510, Mil-Q-9858, Mil-l-45208, Mil-M-38510 Mil-M-38510. 1x101 53RA1681A, 53S3281, 7401A 4x101 MMI PAL14L8 PAL20L10 MMI PAL20X10 MMI MMI DATE CODE PAL 53RA1681 PAL16R6 MMI

    LM016L

    Abstract: LM213XB LM258XB LMG6411PLGE LMG6250ULGR HITACHI LM213XB LCD LM016L lm086aln hitachi lcd lm 234 LCD 480x64
    Text: LCD M odule Line Up G raphic D isp lay LCD M odule •L M 2 5 8 X B Ili • LM 213X B • LM 721XBN P •L M G 6 3 9 0 Q .H G R • LM 246X • L M G 6 471X T F C ‘ ífiT tU M U U k M L A M i •L M 0 6 4 0 0 P L G R • LM G 5040XU FC • LM 215X B •


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    PDF 721XBN 5040XU LH568F M24T026 LM016L LM213XB LM258XB LMG6411PLGE LMG6250ULGR HITACHI LM213XB LCD LM016L lm086aln hitachi lcd lm 234 LCD 480x64

    wf vqc 10d

    Abstract: TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd
    Text: 2 Specialty Memory Products 1988 Data Book Advanced Micro Devices Monolithic ryisn Memories UliTlU A W h o lly O w n e d S u b s id ia ry o f A d v a n c e d M ic r o D e vice s a Advanced Micro Devices Sp ecialty Memory Products Data Book/Handbook Introduction


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    PDF 06566C 06972D 06705D wf vqc 10d TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd

    J15TE

    Abstract: PA-101 Pyroelectric detector J15TE4 PA101 pa300
    Text: J15TE Short Wave Mercury Cadmium Telluride Detectors 2 to 5 um judson techn al q gi es Figure30-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors G e n e ra l J15TE Series "Short-Wave" detectors are photoconductive HgCdTe elements on


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    PDF J15TE J15TE Figure30-1 J15TE2 J15TE3 J15TE4 PA-101 Pyroelectric detector PA101 pa300

    PH 33J

    Abstract: w6553 LM 385 N W34400 44811 Winslow W3480 W35500 W36600 W62200
    Text: W3480 W62200 W34400 W65520 W35500 Series W36600 Single in Line Products • • • • • Sockets — Headers — Connectors Screw machine & stamped contacts Very wide range plus “Snap Apart” makes any size from 1 to 32 contacts UL 94 V -0 approved material


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    PDF W3480 W62200 W34400 W65520 W35500 W36600 W34425 W35520 W3480-24 W65510SC PH 33J w6553 LM 385 N 44811 Winslow W36600

    6X101

    Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
    Text: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109


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    PDF 000272b P2837-01 5X108 1X109 2X1010 4X102 3X109 6X109 5X109 K1713-01 6X101 P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas