HXNV0100
Abstract: No abstract text available
Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109
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HXNV0100
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
N61-0995-000-000
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HS-26C31
Abstract: HS-26C31RH HS9-26C31RH-8 HS1-26C31RH-Q HS1-26C31RH-8 HS9-26C31RH-Q 26C31 CDFP4-F16 26C31 leakage CERAMIC FLATPACK 16
Text: HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free • EIA RS-422 Compatible Outputs (Except for IOS)
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HS-26C31RH
1x109
RS-422
-55oC
125oC
Mil-Std-1835
CDIP2-T16
-55oC,
125oC
HS-26C31
HS-26C31RH
HS9-26C31RH-8
HS1-26C31RH-Q
HS1-26C31RH-8
HS9-26C31RH-Q
26C31
CDFP4-F16
26C31 leakage
CERAMIC FLATPACK 16
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Untitled
Abstract: No abstract text available
Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s
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HXNV0100
HXNV0100
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
ADS-14191
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s
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HXNV01600
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
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cdte
Abstract: Laser photodetectors photoconductor pci-l-2te-1
Text: PCI-L-2TE Series IR Laser Photoconductors Fast, Sensitive 2-12µm CO2 Laser Detectors Photoconductors Room Temperature, Optically Immersed FEATURES • D* 10.6 µm > 1x109 cmHz1/2/W • 10 nanosecond response time • Wide dynamic range • Compact, rugged, and reliable
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1x109
cdte
Laser photodetectors
photoconductor
pci-l-2te-1
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Untitled
Abstract: No abstract text available
Text: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features ▪ Fabricated on Silicon On Insulator SOI CMOS Technology ▪ SOI4 Process (Leff = 0.8 um) ▪ Total Dose Hardness 300k rad (Si) ▪ Dose Rate Upset Hardness 1x109 rad(Si)/s ▪ Dose Rate Survivability
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HMXMUX01
1x109
1x1012
1x1014
120ns
HMXMUX01
ADS-14199
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HXNV0100
Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
Text: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109
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HXVN0100
HXNV0100
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
N61-0995-000-000
Tunneling Magnetoresistance
mram
HXVN0100
MIL-PRF38535
S150
Department of Defense
honeywell mram
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r60 mkt
Abstract: 3330-6-R60IF r60 mkt 400 A r60 mkt 400 22 CAPACITOR R60II R60PF r60er5100 1470 LM R60PR4150 capacitor polyester mkt 400v
Text: Loose R60 MKT Series Taped METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Fig. 2 Fig.1 Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.: AUTOMOTIVE . PRODUCT CODE: R60
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630Vdc)
1000Vdc)
1x10-9
005xinitial
r60 mkt
3330-6-R60IF
r60 mkt 400
A r60 mkt 400 22 CAPACITOR
R60II
R60PF
r60er5100
1470 LM
R60PR4150
capacitor polyester mkt 400v
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fiber optic schematic symbols
Abstract: No abstract text available
Text: Inexpensive 20 to 160 MBd Fiber Optic Solutions for Industrial, Medical, Telecom, and Proprietary Data Communication Applications Application Note 1123 Introduction Low cost, fiber optic, data communications links have been used in place of copper wire in numerous industrial, medical and proprietary applications. The fiber optic
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AV02-0728N
fiber optic schematic symbols
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Untitled
Abstract: No abstract text available
Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1213
CM1213
MSOP-10
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MK1573-02
Abstract: No abstract text available
Text: ICROCLOCK GenClock MK1573-02 HSYNC to Video Clock Description Features The MK1573 GenClock™ provides genlock timing for video overlay systems. The device accepts the horizontal sync HSYNC signal as the input reference clock, and generates a frequencylocked high speed output. Stored in the device are
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MK1573-02
MK1573
27MHz
295-9800tel·
295-9818fax
MDS1573-02B
MK1573-02
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Untitled
Abstract: No abstract text available
Text: U HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1 . 2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si) - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free
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HS-26C31RH
1x109
RS-422
Mil-Std-1835
CDIP2-T16
125PC
10sA/cm2
110pm
100pm
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varistor 102m
Abstract: 270v varistor d 302 RA-362MS-V7 270v varistor RA-102M RA-242M-V7 RA-272M 10mm 270v cd 152m LR105073
Text: RA-V7 SERIES SURGE ABSORBER @ OKAYA M SÂ<§ A Features File NO. Safety Agency : Standard • Fast response time. • Bi-polar surge absorber, it will fail open if the surge withstand capacity is exceeded. • Small inter-terminal capacitance. • High insulation resistance 1X109h. min .
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1X109h.
300times
8X20m
UL1449
UL1414
E143446
E47474
LR105073
IEC60384-14
J95511033
varistor 102m
270v varistor d 302
RA-362MS-V7
270v varistor
RA-102M
RA-242M-V7
RA-272M
10mm 270v
cd 152m
LR105073
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Untitled
Abstract: No abstract text available
Text: Honeywell RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 M-mLeff RICMOS™ IV Bulk Process • Total Dose Hardness >1x10 rad Si02 • Dose Rate Upset Hardness >1x109rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)
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HR2000
1x109rad
1x101
1x101/cm2
HR2000
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207K AW
Abstract: No abstract text available
Text: Honeywell HR2000 RICMOS " GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm RICMOS IV Bulk Process Total Dose Hardness of >1x106 rad S i02 Dose Rate Upset Hardnes >1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)
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1x10M
1x106
1x109
HR2000
HR2000
207K AW
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iec60384-14
Abstract: surge protector Okaya RAM-302LAS Okaya Surge Protector RAM-362LAS E47474 LR105073 302LAS UL1449 25ot
Text: Û SURGE PROTECTOR R • A • M-LAS series @ OKAYA M Features 9• à <V Ê it*Alaywuai • Fast response time. • Bi-polar and it will fail open if surge withstand capability is exceeded. • Small inter-terminal capacitance. • High indulation resistance 1X109£2 min .
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1X109
UL1414,
UL1449
E47474,
E143446
LR105073
IEC60384-14
J9650111
302us
50/60HZ
surge protector Okaya
RAM-302LAS
Okaya Surge Protector
RAM-362LAS
E47474
LR105073
302LAS
25ot
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417 rotary knob
Abstract: No abstract text available
Text: Rotary knob sw itches S eries 417 Basic design: 12 positions, nominal width 19,4 mm, with mounted PC-board Type 421 Electrical Specification Mechanical Specification Switch resistance initial value after 1 5 0 0 0 cycles Insulation resistance Test voltage
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1x109Q
417 rotary knob
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HX6408
Abstract: No abstract text available
Text: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)
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HX6408
5x105rad
1x109
1x101
40-Lead
D2888
3Q172S
HX6408
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Untitled
Abstract: No abstract text available
Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power
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1x10u
1x109
1x101
1x108
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Untitled
Abstract: No abstract text available
Text: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)
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HLX6408
5x10srad
1x101
1x109
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)
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HLX6256
1x106ra
1x10l4
1x101
4551A72
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Untitled
Abstract: No abstract text available
Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly
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HC80805
1x10s
1x109
1x102upsets/module-day)
BADDR11
BARRD10
BDISCRI03
BDISCRI02
BDISCRI01
BADDR21
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Untitled
Abstract: No abstract text available
Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process
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HR1060
1x106
1x109rad
1x1012rad
1x109upsets/bit-day
1x1014cnrr2
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)
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HX6228
1x106
1x101
1x109
32-Lead
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