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    4MBIT Search Results

    4MBIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT25PE40-SHN-B Renesas Electronics Corporation 4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT25SF041B-SSHB-T Renesas Electronics Corporation 4Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT25XE041D-SHN-T Renesas Electronics Corporation 4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support Visit Renesas Electronics Corporation
    AT45DB041E-SSHN2B-T Renesas Electronics Corporation 4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT25FF041A-SSHN-T Renesas Electronics Corporation 4Mbit, 1.65 V to 3.6 V SPI Serial Flash Memory with Multi-I/O Support Visit Renesas Electronics Corporation

    4MBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)


    Original     		PDF V58C2128 DDR400 DDR333

    MSM27C402CZ

    Abstract: No abstract text available
    Text: ¡ Semiconductor 1A MSM27C402CZ 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C402CZ is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MSM27C40


    Original     		PDF MSM27C402CZ 144-Word 16-Bit 288-Word MSM27C402CZ 16bit MSM27C40 MSM27C402 40-pin

    MR27V402D

    Abstract: MR27V402DMP MR27V402DRP MR27V402DTP
    Text: ¡ Semiconductor 1A MR27V402D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V402D is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MR27V402D


    Original     		PDF MR27V402D 144-Word 16-Bit 288-Word MR27V402D 16bit 40-pin MR27V402DMP MR27V402DRP MR27V402DTP

    LH28F640BFHG-PBTL70A

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 4Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F640BFHG-PBTL70A 64Mbit 4Mbitx16) LHF64FH9) FM045022A LHF64FH9 LH28F640BFHG-PBTL70A

    ES29LV400EB-70TGI

    Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
    Text: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		PDF ES29LV400E 512Kx 8/256K 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV400ET ES29LV400EB 48-pin ES29LV400EB-70TGI ES29LV400EB-70TG ES29LV400E BB 555

    ELITE FLASH STORAGE TECHNOLOGY INC

    Abstract: BPL TV soic-8 200mil
    Text: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over


    Original     		PDF 512Kx8) F25L004A 33MHz 50MHz; 75MHz; 100MHz ELITE FLASH STORAGE TECHNOLOGY INC BPL TV soic-8 200mil

    Untitled

    Abstract: No abstract text available
    Text: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory „ FEATURES - Block erase time 1sec (typical) - Sector erase time 90ms(typical) y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz


    Original     		PDF 512Kx8) F25L004A 33MHz 50MHz; 75MHz; 100MHz

    VQFP44 package

    Abstract: isp Cable Version 3.0 VQ44 XQR18V04 XQVR1000 XQVR300 XQVR600 fpga radiation XQR2V1000 XQR18V04VQ44N
    Text: QPro XQR18V04 Radiation Hardened 4Mbit QML ISP Configuration Flash PROM R DS082 v1.4 December 15, 2003 5 Features • Description Operating Temperature Range: –55° C to +100° C MeV/cm2/mg • Latch-Up Immune to LET >120 • Guaranteed TID of 30 kRad(Si) per spec 1019.5


    Original     		PDF XQR18V04 DS082 CascadV04CC44M XQR18V04CC44V XQR18V04VQ44N XQ18V04. VQFP44 package isp Cable Version 3.0 VQ44 XQVR1000 XQVR300 XQVR600 fpga radiation XQR2V1000 XQR18V04VQ44N

    Untitled

    Abstract: No abstract text available
    Text: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)


    Original     		PDF V58C2256 16Mbit DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)


    Original     		PDF V58C2128 DDR400 DDR333

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)


    Original     		PDF V58C2128 DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns


    Original     		PDF V58C2128 DDR500 DDR400 DDR333

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns


    Original     		PDF V58C2128 DDR500 DDR400 DDR333

    9.1 b3

    Abstract: No abstract text available
    Text: V59C1256 404/804/164 QA*I HIGH PERFORMANCE 256Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) PRELIMINARY 37 3 25 DDR2-533 DDR2-667 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1256 256Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 400MHz 9.1 b3

    Untitled

    Abstract: No abstract text available
    Text: V58C2256 804/404/164 SG HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns


    Original     		PDF V58C2256 16Mbit DDR500 DDR440 DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5D 5B 5 6 7 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5 ns 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2256 16Mbit DDR400 DDR333 DDR266

    9.1 b3

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1256 404/804/164 QA HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1256 256Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 9.1 b3

    BA 5053

    Abstract: No abstract text available
    Text: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns 7.5ns Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2256 16Mbit DDR500 DDR440 DDR400 DDR333 DDR266 BA 5053

    F25L004A

    Abstract: 100DG
    Text: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory „ FEATURES y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz y y y Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over


    Original     		PDF F25L004A 512Kx8) 33MHz 50MHz; 75MHz; 100MHz 150-mil 200-mil F25L004A 100DG

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original     		PDF HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99

    2048x2048

    Abstract: No abstract text available
    Text: HY62UF8400/ HY62QF8400/ HY62EF8400/ HY62SF8400 Series 512Kx8bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF8400 / HY62QF8400 / HY62EF8400 / HY62SF8400 is a high speed and super low power 4Mbit full CMOS SRAM organized as 524,288 words by 8 bits. The HY62UF8400 /


    Original     		PDF HY62UF8400/ HY62QF8400/ HY62EF8400/ HY62SF8400 512Kx8bit HY62UF8400 HY62QF8400 HY62EF8400 2048x2048

    HB56A232BT-6B

    Abstract: HB56A232 HB56A232BT-8B
    Text: HB56A232 Series 2,097,152-word x 32-bit High Density Dynamic RAM Module The HB56A232 is a 2M × 32 dynamic RAM module, mounted 16 pieces of 4Mbit DRAM HM514400BS/BLS/CS/CLS sealed in SOJ package. An outline of the HB56A232 is 72-pin single in-line package. Therefore, the HB56A232


    Original     		PDF HB56A232 152-word 32-bit HM514400BS/BLS/CS/CLS) 72-pin HB56A232 72-pin HB56A232BT-6B HB56A232BT-8B

    Untitled

    Abstract: No abstract text available
    Text: HB56T132D Series 1,048,576-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T132D is a 1 M x 32 dynamic RAM Small Outline DIMM S. O. DIMM , mounted 8 pieces of 4Mbit DRAM (HM514400CTT/CLTT) sealed in TSOP package. An outline of the HB56T132D is 72-pin Zig


    OCR Scan     		PDF HB56T132D 576-word 32-bit ADE-203Rev. HM514400CTT/CLTT) 72-pin

    tc55v4000st-70

    Abstract: No abstract text available
    Text: H3S- I TOSHIBA 4Mbit Static RAM TC55V4000ST Data Sheet TO SH IBA TC55V4000ST-70,-85 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V4000ST is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8


    OCR Scan     		PDF TC55V4000ST TC55V4000ST-70 288-WORD 304-bit 32-P-0