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    4J SOT23 Search Results

    4J SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    4J SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IC103

    Abstract: MT38A araa FMMT38A FMMT38B FMMT38C CJKL
    Text: m SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON ISSUE 2- JANUARY TRANSISTORS 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS - ABSOLUTE MAXIMUM FMMT38A - 4J FMMT38B - 5J FM MT38C - 7.J RATINGS. PARAMETER Collector-Base Voltage


    Original     		MT38C FMMT38A FMMT38B 10perating -55to IC103 MT38A araa FMMT38A FMMT38B FMMT38C CJKL PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS – E C FMMT38A – 4J


    Original     		FMMT38A FMMT38C FMMT38A FMMT38B 100ms 100us PDF

    10 amp npn darlington power transistors

    Abstract: FMMT38C FMMT38B 100 amp npn darlington power transistors FMMT38A DSA003692
    Text: FMMT38A FMMT38B FMMT38C ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS I /I =100 C - Normalised Gain 1.6 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C h V - Volts 1.0 B 0.2 0.001 0.01 0.1 1 1.4 0.8 CE 0.4 -55°C


    Original     		FMMT38A FMMT38B FMMT38C 100mA, 10 amp npn darlington power transistors FMMT38C FMMT38B 100 amp npn darlington power transistors FMMT38A DSA003692 PDF

    FMMT38A

    Abstract: FMMT38B FMMT38C
    Text: FMMT38A FMMT38B FMMT38C ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS 1.6 hFE - Normalised Gain 1.0 VCE sat - (Volts) VCE=5V IC/IB=100 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C 0.2 0.001 0.01 0.1 1 0.6


    Original     		FMMT38A FMMT38B FMMT38C FMMT38A FMMT38B FMMT38C PDF

    FMMT38A

    Abstract: FMMT38B FMMT38C FE500
    Text: FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38B FMMT38C ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS VCE=5V IC/IB=100 1.6 hFE - Normalised Gain VCE sat - (Volts) 1.0 -55°C


    Original     		FMMT38A FMMT38C FMMT38A FMMT38B FMMT38B FMMT38C FE500 PDF

    transistor marking hy

    Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
    Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY


    Original     		STT3PF20V OT23-6L OT23-6L transistor marking hy PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V PDF

    Untitled

    Abstract: No abstract text available
    Text: DB3X313K Silicon epitaxial planar type Unit: mm For small current rectification DB2J313 in Mini3 type package • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant


    Original     		DB3X313K DB2J313 UL-94 DB3X313K0L PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14659 Revision. 1 Product Standards Schottky Barrier Diode DB3Y313KEL DB3Y313KEL Silicon epitaxial planar type Unit : mm For small current rectification DB3X313K in NMini3 type package 2.9 0.4 0.13 • Features 3 1.4 2.4  Low forward voltage and small reverse leakage current


    Original     		TT4-EA-14659 DB3Y313KEL DB3X313K UL-94 PDF

    marking code SS SOT23

    Abstract: marking code SS SOT23 transistor
    Text: 3STR1630 Low voltage high performance NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting circuits


    Original     		3STR1630 OT-23 OT-23 marking code SS SOT23 marking code SS SOT23 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 - JANUARY 1996_ FEATURES * * 60 Volt VCE0 Gain of 10K at lc=0.5 Amp PARTMARKING DETAILS - FMMT38A - 4J F M M T 3 8B -5 J F M M T 3 8 C -7 J


    OCR Scan     		FMMT38A FMMT38B FMMT38C FMMT38A TaiIllp250C TT7D576 7G57fl PDF

    t38b

    Abstract: MT38A
    Text: FMMT38A FMMT38B FMMT38C 3 - 101 FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR M E D IU M POW ER DARLINGTON T R A N SIST O R S ISSUE 3 -AUG UST 1996 FEATURES * * 60 Volt V CE0 Gain of 10K at lc=0.5 A m p P A R T M A R K IN G D E T A IL S - F M M T 3 8 A - 4J


    OCR Scan     		FMMT38A FMMT38B FMMT38C 800mA, 100mA, 500mA, t38b MT38A PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JA N U A R Y 1996 FEA TU R ES * 6 0 V o lt V CE0 * G a in o f 1 0 K a t !c = 0 .5 A m p P A R T M A R K IN G D E T A IL S - F M M T 3 8 A - 4J F M M T 3 8 B - 5J


    OCR Scan     		FMMT38A FMMT38B FMMT38C PDF

    DIODE MOTOROLA 2101

    Abstract: marking 4p sot23 MMBV2104 Diode marking 4R MMBV2102 MMBV2100 MMBV diode marking 4p MMBV2106 diode marking 4K
    Text: 34 MOTOROLA SC {DIODE S/ OP T O} 6367255 MOTOROLA SC DE"|b3b7255 003Û3S3 5 <D I O D E S / O P T O 3<tC 3 8 3 5 3 D SOT23 continued) d e v ic e no. MMBV2097 thru MMBV2109 SMALL-SIGNAL TUNING DIODES T 0 P VIEW | i • D esigned for general-frequency control and tuning applications.


    OCR Scan     		b3b7255 MMBV2097 MMBV2109 MMBV-2097 MMBV-2098 MMBV-2099 MMBV-2100 MMBV-2101 MMBV-2102 MMBV-2103 DIODE MOTOROLA 2101 marking 4p sot23 MMBV2104 Diode marking 4R MMBV2102 MMBV2100 MMBV diode marking 4p MMBV2106 diode marking 4K PDF

    marking KAY SOT-23

    Abstract: No abstract text available
    Text: BAS40 . BAS40-06 Silicon Schottky Barrier Diodes These diodes feature very low tum-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as elec­ trostatic discharges. Top View m m | 0.95 0.95|


    OCR Scan     		BAS40 BAS40-06 BAS40-04 OT-23 BAS40-05 marking KAY SOT-23 PDF

    MMBD501

    Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
    Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2


    OCR Scan     		OT-23 OT-23 MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD501 MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MBAS16 PDF

    Untitled

    Abstract: No abstract text available
    Text: r 6 3 6 7 2 5 5 M O TO RO LA S C D IO D E S / O P T O Tfi 980 78628 DE|b3b7HS5 P _ T - 0 7-/9 DOTahEâ t T -fH l SOT-23 D IO D E S (continued) Zener Diodes (continued) Pinout: 1-Anode, 2-NC, 3-Cathode VZ i Volts Vz2 Volts V Z3 Volts «1 : iz mA <Z2 1 1


    OCR Scan     		OT-23 BV2109 BV3102 BV409 MMBV432L PDF

    MV2107

    Abstract: mbv2109 MV2113
    Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PACKAGE for high volum e require­ ments of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.


    OCR Scan     		V21XX MMBV21XXLT1 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2109LT1* 33AS8) MMBV2101LT1, MV2107 mbv2109 MV2113 PDF

    47 16S P6

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KRA116S-KRA122S TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A ND DRIVER CIRC U IT A PPLICATIO N L FEA T U RE S lì L DIM • With Built-in Bias Resistors. • Simplify Circuit Design.


    OCR Scan     		KRA116S-KRA122S KRA116S KRA117S KRA118S KRA120S KRA122S KRA120S KRA121S 47 16S P6 PDF

    101dbp

    Abstract: No abstract text available
    Text: EBAlpha Plastic Packaged Limiter Diodes SMP1330 Series Features O u t l i n e D ra w in g • Characterized Limiter Performance 500 MHz to 2 GHz SOT-23 -0.0 30 0.8 mm in ■ Low Insertion Loss s - m r ■ Low Distortion 0.035 (.9 mm) 3 PLCS. ■ Low Cost Plastic Packages


    OCR Scan     		SMP1330 OT-23 101dbp PDF

    MV2107

    Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
    Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.


    OCR Scan     		MV21XX MMBV21XXLT1 1MV21 40Vdc n/MV2109 MV2107 MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1 PDF

    MV2107

    Abstract: BV2108 MV2113 BV-2108
    Text: MOTOROLA SEMICONDUCTOR MMBV2101L thru MMBV2109L MV2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 MMBV2101L thru MMBV2109L C A SE 182-02


    OCR Scan     		MMBV2101L MMBV2109L MV2101 MV2115 O-236AB OT-23 MMBV2109L MV2107 BV2108 MV2113 BV-2108 PDF

    SMBD2837

    Abstract: 550 SOT143 br sot-143 SMBD2836
    Text: Diodes For com plete package outlines, refer to pages PO-1 through PO-6 General Purpose, Switching and Rectifier Type BAL74 BAL99 BAR74 BAR99 BAS 16 BAS16W BAS 19 BAS20 BAS21 BAS28 BAS78A BAS78B BAS78C BAS78D BAS79A BAS79B BAS79C BAS79D BASI 16 BAV70 BAV70W


    OCR Scan     		BAL74 BAL99 BAR74 BAR99 BAS16W BAS20 BAS21 BAS28 BAS78A BAS78B SMBD2837 550 SOT143 br sot-143 SMBD2836 PDF

    mark E4 SOT-23-5

    Abstract: E4 SOT-23-5 marking code B2 SOT-23-5 sot-23-5 marking B2 SOT-89 marking E3 mark A E sot-89-3 404 sot SOT-23-5 MARKING b4 sot-23-5 Micropower Voltage Regulator SOT-23-5 MARKING b4 boost
    Text: “ Semiconductor, Inc. TC46 Series VOLTAGE REGULATOR LOW DROPOUT, LOW CURRENT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TC46 Series are high accuracy 3-terminal CMOS voltage regulators. Output currents extend to 80mA, with quiescent currents around 1|xA. The design features very


    OCR Scan     		OT-23-5 OT-89 OT-23-5/SOT-89: OT-89: OT-23-5: OT-23-5 OT-89-3 mark E4 SOT-23-5 E4 SOT-23-5 marking code B2 SOT-23-5 sot-23-5 marking B2 SOT-89 marking E3 mark A E sot-89-3 404 sot SOT-23-5 MARKING b4 sot-23-5 Micropower Voltage Regulator SOT-23-5 MARKING b4 boost PDF

    marking u3j

    Abstract: SOT223 6 pin smb marking U3j marking 0f sot143 244 u3d ae SMC MARKING motorola dpak top marking 360 u3j
    Text: MOTOROLA h SEMICONDUCTOR TECHNICAL DATA MURS320T3 MURS360T3 Su rface M ou n t U ltrafast Pow er Rectifiers Motorola Pi«ferrad DevtcM . . . employing state-of-the-art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes,


    OCR Scan     		MURS320T3 MURS360T3 DO-35 marking u3j SOT223 6 pin smb marking U3j marking 0f sot143 244 u3d ae SMC MARKING motorola dpak top marking 360 u3j PDF