hym536810
Abstract: HYM53
Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.
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HYM536810
36-blt
36-bit
HY5117400
HY514100A
22fiF
HYM53681OM/LM/TM/LTM
HYM53681OMG/LMG/TMG/LTMG
HYM53681OT/LT
HYM53
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721 KXC
Abstract: moc 3048
Text: «HYUNDAI H Y 6 2 V 8 1 0 0 A 128K S e r ie s CMOS SRAM X 8 -b it PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131.072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that
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HY62V8100A
128Kx
55/70/85/100ns
-100/120/150/200ns
t00-H
792e0
1DD04-11-MAY95
721 KXC
moc 3048
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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16-bit
HY5116164B
16-bit.
HY5116164B
1ADS7-10-MAY95
HY5116164BJC
HY5116164BSLJC
HY5116164BTC
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Untitled
Abstract: No abstract text available
Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands
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HY29F200T/B
HY29F200
16-Bit)
G-70I,
T-70I
R-701
G-70E,
T-70E,
R-70E
G-90I
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM540410 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540410 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting often HY5117400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. O.Zty? decoupling capacitor is mounted for each
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HYM540410
40-bit
HY5117400
HYM54041OM/LM/TM/LTM
HYM54041OMG/LMG/TMG/LTMG
HYM540410M/LM
HYM540410TM/LTM
1CE09-00-MAY93
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Untitled
Abstract: No abstract text available
Text: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit
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36-bit
HYM536810A
HY5117400A
HY514100A
HYM53681OAM/ALM/ATM/ALTM
HYM53681OAMG/ALMG/ATMG/ALTMG
HYM536810A/AL
HYM536810AT/ALT
4b75DflA
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Untitled
Abstract: No abstract text available
Text: • HYUNDAI HYM536220A W-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^Fdecoupling
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HYM536220A
36-bit
HY5118160B
HY531000A
HYM536220AW/LW
HYM536220AWG/LWG
back-14)
DQ0-DQ35)
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 2 1 6 2 5 7 256K x S e r ie s 16-bit Video RAM with 2WE Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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16-bit
16bits
1VC02-00-MAY95
HY5216257
525mil
64pin
4b750flfl
1VC02-00-MAY9S
HY5216256GE
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