4ASSM52 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
KA 7015 Abstract: 4ASSM52 Text: International IQR Rectifier Bulletin 127090 rev. A 09/97 IRK. SERIES STANDARD RECOVERY DIODES MAGN-A-pak Power Modules Features • 250A 270A 320A High voltage ■ Electrically Isolated base plate ■ 3 5 0 0 V RMSlsolatlng voltage ■ Industrial standard package	OCR Scan	PDF	31-MaximumNon-RepetitiveSurgeCurrent 32-ForwardVoltageDropCharacteristlcs 5545E GQ30100 KA 7015 4ASSM52
Untitled Abstract: No abstract text available Text: brtemational PD91226 j«g]Rectifier_ IRFD 320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements	OCR Scan	PDF	4A5545E
Untitled Abstract: No abstract text available Text: International Rectifier PD 9.1097A IRF7105 preliminary HEXFET® Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching	OCR Scan	PDF	IRF7105 Q02b4R7 111161X
Untitled Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER bSE D • 4Û5S452 ÜD17110 1EÖ PD-2.306 International S Rectifier 31 dqo 9 31DQ10 3.3 Amp SCHOTTKY RECTIFIER Description/Features Major Rating» and Characteristics The 31 DQ. axial leaded Schottky rectifier has been opti mized for very low forward voltage drop, with moderate	OCR Scan	PDF	5S452 D17110 31DQ10 D1711E 31DQ09 SS452 DD17113
U9024N Abstract: BSS 250 IRFR P-Channel MOSFET Text: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2	OCR Scan	PDF	IRFR9024N) IRFU9024N) 1RFR/U9024N 4A5545E 002flL07 U9024N BSS 250 IRFR P-Channel MOSFET
Untitled Abstract: No abstract text available Text: PD - 9.1562A International IQR Rectifier IRF9410 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Vqss = 30 V ^DS on = Description	OCR Scan	PDF	IRF9410 IRF7403 IRF7413 QQ2T32b