4A554 Search Results

HB-S Rectifier

Abstract: KA2 v0 diode b3l 15a negetive diode
Contextual Info: I N T E R N A TI ON AL RECTIFIER lIO R lin t e r n a t io n a l "t Ì Dlf 4A554S2 □□□?□□? i T “ 3-5 “ /? Data Sheet No. PD-3.155 r e c t if ie r S23AF & S23AFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 fjs 430 AMP RMS, RING AMPLIFYING GATE

AL 60 dv 1419

Contextual Info: 4A554S3 0015*134 034 • International ;i»r Rectifier HEXFET Power MOSFET • • • • INR PD-9.849 IRLIZ44G INTERNATIO NAL R E C T IF IE R bSE I> Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive

70U30

Abstract: so42 70U40 diode 300U40A 70U120 300U40A 300u80 70U10 DIN41887 70U20
Contextual Info: _ INTERNATIONAL RECTIFIER T 73 | Data Sheg.t No. PD-2.090A 4A554S5 □□073Sti T-0 hX3 4 | INTERNATIONAL RECTIFIER IOR 7OU, 300U-A SERIES 8 5 0 and 3 0 0 Amp Avg Power Silicon Rectifier Diodes Major Ratings and Characteristics Description and Features

Contextual Info: International S ] Rectifier HEXFET® Power MOSFET • • • • • • 4A55452 □014StlS 115 « I N R PD-9.593B IRC840 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: E?R R ectifie PD-9.3261 4A554S2 D014baD 3fl4 H I N R International INTERNATIONAL RECTIFIER E5E ]> IR F610 HEXFET P o w e r M O S F E T • • • • • Dynam ic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirem ents

Contextual Info: INTERNATIONAL RECTIFIER fc.SE » m 4A55452 Q D 1 L.2 S 7 1 SB • INR Bulletin E27101 International lÜ ] Rectifier IRFK3DC50,IRFK3FC50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

international rectifier p

Abstract: n5204
Contextual Info: international rectifier î“ — i — - -— — 48 55452 SS - - - INTERNATIONAL ÏMf|4a554S2 00047=15 4 - R EC flFlER 55C 04795 D Data Sheet No. PD-3.081A

1RF620S

Contextual Info: International k ?r Rectifier • PD-9.900 _ IRF620S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4A554S2 0014704 b4fi ■ INR Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching

B25DC

Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
Contextual Info: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS

Contextual Info: INTERNATIONAL RECTIFIER XOH 73 dF | 4A554S5 QD0bTÖ3 4 | ~ T- Data Sheet No. PD-3.151 i n t e r n a t i o n a l r e c t i f ie r S34DF & S34DFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 ¿/s 400 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

Contextual Info: HE D | 4A554 55 QOGc343t. 1 | Data Sheet No. PD-9.383D INTERNATIONAL RECTIFIER 7 " -/? -/? IN T E R N A T IO N A L . R E C T IF IE R HEXFET TRANSISTORS P-CHASMNEL POWER MOSFETs TO-39 PACKAGE I O R IRFFS220 IRFF9221 G IRFF9SSS IRFF9SS3 Features: -200 Volt, 1.5 Ohm HEXFET

Contextual Info: International k ?r Rectifier I HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • 4A55452 0013146 371 H I N R PD-9.834 IRFI720G Isolated Package High Voltage Isolations 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance

R300 diodes

Abstract: international rectifier R300 10B0 R300 R30D HIN35 cf rh ir R300
Contextual Info: INTERNATIONAL RECTIFIER ^ 3C 0 7 2 G 4 d 'T - o / ^ II O R I i n t e r n a t i o n a l , r e c t i f i e r - •- Data Sheet n o . ku-z.i40 “ - - 73 D | 4A5545E 00u7dD4 3 ■ ■ R30D & R30DR SERIES 1000 - 400 VOLTS RANGE 450 AMP AVG STUD MOUNTED

TIC33

Abstract: dt t3d 13 040B 75HQ 75HQ035 85HQ 85HQ030 85HQ035 DO-203AB 7666A
Contextual Info: INTERNATIONAL RECTIFIER 48 55452 liS INTERNATIONAL DE I 4A554S2 D0DS1S7 55C RECTIFIER 05127 Data Sheet No. PD-2.040B INTERNATIONAL RECTIFIER X O R 3 75HQ, 85HQ SERIES 7 5 and 8 5 Amp Schottky Power Rectifiers Major Ratings and Characteristics Rating Characteristic

2N7224 JANTXV

Abstract: 3000CL 2N7224 IRFM150
Contextual Info: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

H270

Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452
Contextual Info: Data Sheet No. PD-9.818 I N T E R N A T I O N A L R E C T I F I E R I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N -C H A N N E L 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

IG8T

Abstract: DIODE 65A IRGKI065F06 82FL
Contextual Info: International B Rectifier PD-9.965C IRGKI065F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses

IRF1010

Abstract: IRF734 SS452
Contextual Info: PD-9.999 International H ü Rectifier IRF734 HEXFET Pow er M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration H E X F E T s from International R ectifier provide the de sig ner

k 3525 MOSFET

Abstract: IRFR110 FR110 ir 9524B fr110 FR110 b optron IRFR111 IRFU110 IRFU111
Contextual Info: HE T-35-25 Data Sheet No. PD-9.524B D I 4055452 aoaö27b Ü | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFR110 ÎRFR111 IRFU110 IRFU111 HEXFET TRANSISTORS ' ] N -C H A N N E L

irfae42

Abstract: JRFAE42
Contextual Info: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package

Contextual Info: Bulletin 125190/B International S Rectifier ST700C.L s e r ie s PHASE CONTROL THYRISTORS Hockey Puk Version Features C e n te r a m p lify in g g a te M e ta l c a s e w ith c e ra m ic in s u la to r In te rn a tio n a l s ta n d a rd c a s e T 0 -2 0 0 A C B -P U K

1RFZ34

Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Contextual Info: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD-2.473 International [ìq r ì Rectifier HFA80NC40C Ultrafast, Soft Recovery Diode HEXFRED" BASE COMMON CATHODE Features V r = 400V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I 1' J V F = 1.3V _ Qrr*