IRFU110 Search Results

k 3525 MOSFET

Abstract: IRFR110 FR110 ir 9524B fr110 FR110 b optron IRFR111 IRFU110 IRFU111
Contextual Info: HE T-35-25 Data Sheet No. PD-9.524B D I 4055452 aoaö27b Ü | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFR110 ÎRFR111 IRFU110 IRFU111 HEXFET TRANSISTORS ' ] N -C H A N N E L

IRFR110

Abstract: IRFU110 SiHFR110 SiHFR110-E3 SIHFU110
Contextual Info: IRFR110, IRFU110, SiHFR110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110/SiHFR110) Qgs (nC)

ifr110

Abstract: TA17441 IFU110 IRFR110 IRFU110 TB334 intersil 4373
Contextual Info: IRFR110, IRFU110 Data Sheet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced

IRFR110

Contextual Info: IRFR110, IRFU110, SiHFR110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Straight Lead • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

marking code diode 14

Abstract: EIA-541 IRFR120 IRFU120 U120
Contextual Info: PD - 95026A IRFR110PbF IRFU110PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U110PbF 2 www.irf.com IRFR/U110PbF www.irf.com 3 IRFR/U110PbF 4 www.irf.com IRFR/U110PbF www.irf.com 5 IRFR/U110PbF 6 www.irf.com IRFR/U110PbF Peak Diode Recovery dv/dt Test Circuit

90718

Contextual Info: IRFU110_RC, SiHFU110_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFU110

Contextual Info: IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

U110

Abstract: IRFR110 u111 IRFr111
Contextual Info: IRFR110/111 IRFU110/111 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PAK Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

TO-252AA Package

Abstract: EIA-541 IRFR120 IRFU120 IRFU110PBF international rectifier code TO252AA IRFR110PBF
Contextual Info: PD - 95026A IRFR110PbF IRFU110PbF • Lead-Free 1 IRFR/U110PbF 2 IRFR/U110PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999

TO-251AA

Abstract: ipak
Contextual Info: International H EXFET Power MOSFETs H^IRectìfier I-Pak I-Pak TO-251A A N-Channel Part Number IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20 V(BR)DSS Drain-to-Source R DS(on) I q Continuous Breakdown On-State Drain Current

Contextual Info: PD - 95026 IRFR110PbF IRFU110PbF • Lead-Free www.irf.com 1 2/19/04 IRFR/U110PbF 2 www.irf.com IRFR/U110PbF www.irf.com 3 IRFR/U110PbF 4 www.irf.com IRFR/U110PbF www.irf.com 5 IRFR/U110PbF 6 www.irf.com IRFR/U110PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches)

Contextual Info: IRFU110 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)4.3 I(DM) Max. (A) Pulsed I(D)2.7 @Temp (øC)100# IDM Max (@25øC Amb)17 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55õ

Contextual Info: IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Straight Lead • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: International 4055452 D015bS2 307 e Rectifier • INR PD-9.524D IRFR110 IRFU110 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR110 Straight Lead (IRFU110) Available in Tape & Reel Fast Switching Ease of Paralleling

EIA-541

Abstract: IRFR120 IRFU120 U120
Contextual Info: PD - 95026A IRFR110PbF IRFU110PbF • Lead-Free Document Number: 91265 12/14/04 www.vishay.com 1 IRFR/U110PbF Document Number: 91265 www.vishay.com 2 IRFR/U110PbF Document Number: 91265 www.vishay.com 3 IRFR/U110PbF Document Number: 91265 www.vishay.com 4

IRFU110

Contextual Info: IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Straight Lead • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

IRFR110

Abstract: Mosfet irfr110 IRFU110
Contextual Info: f f ! H U S E M I C O N D U C T O R P A R R IRFR110 IRFU110 IS N-Channel Power MOSFETs Avalanche Energy Rated January 1994 Features Packages JEDEC TO-251AA TOP VIEW 4.7 A, 100V r DS ON = 0-540 ) SOURCE DRAIN TAB“ Single Puls« Avalanche Energy Rated Ï DRAIN

IRFR110

Abstract: IRFU110 AN-994
Contextual Info: PD-9.524D International [^R ectifier IRFR110 IRFU110 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR110 Straight Lead (IRFU110) Available in Tape & Reel Fast Switching Ease of Paralleling

Contextual Info: IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Straight Lead • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

1RFR110

Abstract: AN-994 IRFR110 IRFU110
Contextual Info: PD-9.524D International i«r Rectifier IRFR110 IRFU110 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR110 Straight Lead (IRFU110) Available in Tape & Reel Fast Switching Ease of Paralleling

ifr110

Abstract: TA17441 IFU110 IRFR110 IRFU110 TB334
Contextual Info: IRFR110, IRFU110 Data Sheet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs January 2002 Features • 4.7A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the

Contextual Info: IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Straight Lead • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

IFR110

Abstract: IFU110 irfr110
Contextual Info: IRFR110, IRFU110 S E M I C O N D U C T O R 4.7A, 100V, 0.54 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.7A, 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power