2N7224 JANTXV
Abstract: 3000CL 2N7224 IRFM150
Text: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International
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IRFM150
MIL-S-19500/595]
IRFM150D
IRFM150U
O-254
MIL-S-19500
S5M52
2N7224 JANTXV
3000CL
2N7224
IRFM150
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2N7224 JANTX
Abstract: 2N7224 JANTXV2N7224 IRFM150 JANTX2N7224
Text: Data Sheet No. PD-9.487C IOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR Zi N-CHANNEL IRFM150 SN7S84 JANTXSN7SS4 JAIMTXVSN7SS4 [ R E F : M I L - S - 1 9 S O O / S 9 2 ) Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International
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IRFM150
JANTX2N7224
JANTXV2N7224
MIL-S-19SOO/5S2]
IRFM1500
IRFM150U
O-254
MIL-S-19500
I-308
2N7224 JANTX
2N7224
JANTXV2N7224
IRFM150
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Untitled
Abstract: No abstract text available
Text: SHD224502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4156, Rev. – HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .07 Ohm, 30A MOSFET • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM150 MAXIMUM RATINGS
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SHD224502
IRFM150
O-258
O-258
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shd225502
Abstract: shd2259
Text: SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .07 Ohm, 30A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM150
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SHD2259
SHD225502
IRFM150
O-254
O-254
shd225502
shd2259
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IRFM150
Abstract: No abstract text available
Text: 2N7224 IRFM150 SEME LAB MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685)
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2N7224
IRFM150
254AA
300ms,
IRFM150"
IRFM150
IRFM150-JQR-B
3700pF
190nC
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2N7224
Abstract: IRFM150
Text: 2N7224 IRFM150 SEME LAB MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685)
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2N7224
IRFM150
254AA
00A/ms
300ms,
2N7224
IRFM150
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IRFM150
Abstract: SHD224502
Text: SHD224502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4156, Rev. – HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .07 Ohm, 30A MOSFET • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM150 MAXIMUM RATINGS
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SHD224502
IRFM150
IRFM150
SHD224502
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.487C IOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR Zi N-CHANNEL IRFM150 SN7S84 JANTXSN7SS4 JAIMTXVSN7SS4 [ R E F : M I L - S - 1 9 S O O / S 9 2 ) Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International
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OCR Scan
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IRFM150
SN7S84
IRFM1500
IRFM150U
O-254
MIL-S-19500
I-308
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Untitled
Abstract: No abstract text available
Text: IRFM150 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)34 I(DM) Max. (A) Pulsed I(D)21 @Temp (øC)100# IDM Max (@25øC Amb)150 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55
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IRFM150
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IRFM150
Abstract: SHD225502
Text: SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .07 Ohm, 30A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM150
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SHD225502
SHD2259
IRFM150
250mA
IRFM150
SHD225502
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Untitled
Abstract: No abstract text available
Text: IRFM150D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)34 I(DM) Max. (A) Pulsed I(D)21 @Temp (øC)100# IDM Max (@25øC Amb)150 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55
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IRFM150D
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Untitled
Abstract: No abstract text available
Text: IRFM150U Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)34 I(DM) Max. (A) Pulsed I(D)21 @Temp (øC)100# IDM Max (@25øC Amb)150 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55
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IRFM150U
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Untitled
Abstract: No abstract text available
Text: mi = V r= INI IRFM150 SEME LAB MECHANICAL DATA N-CHANNEL POWER MOSFET D im ensions in mm inches 6.32 (0.249) 6.60 0.260 r< '- 1.02 (0.040) “ 1*1 I* 1.27 (0.050) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) V DSS 100 V 34A ^D(cont)
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IRFM150
O-254
O-254AA
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM150 2IM7224 JANTX2N7224 JANTXV2N7224 [REF: MIL-S-19SOO/592] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International
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IRFM150
2IM7224
JANTX2N7224
JANTXV2N7224
MIL-S-19SOO/592]
O-254
MIL-S-19500
I-308
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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irfm9034
Abstract: No abstract text available
Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel
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IRFAF30
IRFAF40
IRFAF50
IRFAG30
IRFAG40
IRFAG50
IRF9130
JANTX2N6804
JANTXV2N6804
IRF9140
irfm9034
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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547 MOSFET
Abstract: No abstract text available
Text: SHD218502 SHD218502A SHD218502B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 547, REV. Formerly Part Number SHD2182/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .055 Ohm, 38A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on
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SHD2182/A/B
SHD218502
SHD218502A
SHD218502B
IRFM150
547 MOSFET
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SHD239608
Abstract: shd239606
Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM
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O-254,
O-257)
SHD226413
SHD226401
SHD226402
SHD226403
SHD226404
SHD226405
SHD226406
SHD226407
SHD239608
shd239606
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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IRFM040
Abstract: IRFM050 IRFM460 4B4 RECTIFIER IRFM9130 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340
Text: HIGH-REL HEXFETs I N T E R N A T I O N A L R E C T I F I E R r io R ~ I NT ERN ATIO NAL RECTIFIER 2LE D • 4fi5S452 ODIOSbb fl ■ M-pak — TO-254AA Isolated Package N-CHANNEL Types Vos V if IRFM050 IRFM040 RDS(0N1 1q com >DM PD (max) Tc - 25°C pulsed
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O-254AA
IRFM050
IRFM040
T0-254AA
IRFM150
IRFM140
IRFM250
IRFM240
IRFM360
IRFM350
IRFM460
4B4 RECTIFIER
IRFM9130
IRFM340
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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IRFJ140
Abstract: IRLF110
Text: Government/ Space Products International [1»1Rectifier Power MOSFETS High Reliability Logic Level — N-Channel V d s Drain Source Voltage Vblts Part Number IRLF110 IRLF120 IRLF130 100 RDS(on) On-State Resistance (Ohms) 0.60 0.35 0.20 Iq Continuous Drain Current
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IRLF110
IRLF120
IRLF130
O-205AF
JO-39
IRFE130
IRFN054
IRFN150
IRFN250
IRFN350
IRFJ140
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