4933 TRANSISTOR Search Results

4933 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

4933 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MMBR901 Abstract: No abstract text available Text: MCC Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBR901 Description • • • • • NPN Silicon High-Frequency Transistor High Current-Gain – Bandwidth Products Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ)	Original	MMBR901 10Vdc, MMBR901	PDF
07MS001 Abstract: transistor 7835 LPT16ED yig oscillator application note germanium transistors NPN bipolar transistor ghz s-parameter RF Bipolar Transistor 07AN001 10GHz bipolar transistor 50 ghz s-parameter Text: LPT16ED 30 GHz SiGe Bipolar Transistor Production Information Applications Product Description Low phase noise oscillators up to 16 GHz The LPT16ED is a SiGe low phase noise, high frequency npn transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides	Original	LPT16ED LPT16ED 16GHz. May/01 07MS001 transistor 7835 yig oscillator application note germanium transistors NPN bipolar transistor ghz s-parameter RF Bipolar Transistor 07AN001 10GHz bipolar transistor 50 ghz s-parameter	PDF
Transistor C 1279 Abstract: 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter Text: LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators	Original	LPT16ED LPT16ED 16GHz. OC-192 OC-768 38-DST-01 Transistor C 1279 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter	PDF
PA2423 Abstract: SiGe PNP PA2423L SIGE SEMICONDUCTOR SiGe PNP transistor Text: Application Note 13-APP-03 Maximizing Output Power using Reduced Control Voltage Introduction Several commercially available baseband processors use a power output control that is a voltage source, capable of providing up to a maximum of 2.4V. The power control of SiGe Semiconductor’s PA2423L varies from 0 to 3.3V and	Original	13-APP-03 PA2423L PA2423 13-APP-03 SiGe PNP SIGE SEMICONDUCTOR SiGe PNP transistor	PDF
Untitled Abstract: No abstract text available Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european	Original	SD4933 2002/95/EEC SD4933	PDF
LSE B9 transformer Abstract: SD4933MR LSE B6 transformer SD4933 Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet — preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz	Original	SD4933MR 2002/95/EEC M177MR SD4933MR LSE B9 transformer LSE B6 transformer SD4933	PDF
Untitled Abstract: No abstract text available Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz	Original	SD4933MR 2002/95/EEC M177MR SD4933MR DocID023664	PDF
Untitled Abstract: No abstract text available Text: SD4933 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz • In compliance with the 2002/95/EEC European	Original	SD4933 2002/95/EEC SD4933 DocID15487	PDF
70413080 Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180 Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919	Original	2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180	PDF
SD4933 Abstract: M177 marking code h4 capacitor transistor marking code 325 Text: SD4933 HF/VHF/UHF RF power N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European	Original	SD4933 2002/95/EEC SD4933 M177 marking code h4 capacitor transistor marking code 325	PDF
Untitled Abstract: No abstract text available Text: FSGJ164R TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the system designer both	Original	FSGJ164R	PDF
1E14 Abstract: 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET Text: FSGJ164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GJ R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance	Original	FSGJ164R FSGJ164R 1E14 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET	PDF
Untitled Abstract: No abstract text available Text: FSGJ164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Title SGJ 4R bjec adiat rden GR sista Cha el wer OSF ) utho eyw s adiat rden GR sista Cha el wer OSF , ersil rpor on, mico ucto Intersil Star*Power Rad Hard MOSFETs have been specifically	Original	FSGJ164R	PDF
MURATA CERAMIC CHIP ANTENNA GPS 2.1 Abstract: l1 l2 gps antenna schematic Remote Control Receiver IC CM23 SE4100 SE4100L SE4100L-R 1P LNA 1570MHz gps schematic diagram Text: SE4100L PointCharger GPS Receiver IC Preliminary Information Applications Product Description The SE4100 is an integrated GPS receiver designed to receive the L1 signal at 1575.42MHz. The receiver has a low IF architecture, and integrates all of the amplifier,	Original	SE4100L SE4100 42MHz. 368MHz 27-DST-01 MURATA CERAMIC CHIP ANTENNA GPS 2.1 l1 l2 gps antenna schematic Remote Control Receiver IC CM23 SE4100L SE4100L-R 1P LNA 1570MHz gps schematic diagram	PDF

rca 40290 Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012 Text: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry	OCR Scan	to-72 1N1183A-1 1190AA D2406F-D2406M* 1N3879-1N3883* D2412F-D2412M* 1N3889-1N3893* D2520F-D2520M* 1N3899-1N3903* 1N3909-1 rca 40290 RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012	PDF
T10H 250V Abstract: 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933 Text: BUX82 POWER TRANSISTORS 6A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • Collector-Base Voltage: up to 800V • Peak Collector Current: 10A • On Time: < 500nS @ 2.5A These high voltage glass passivated power tra n sisto rs c o m b in e fa s t sw itching, low	OCR Scan	BUX82 500nS 180/tH 500kHz 1N5820 T10H 250V 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933	PDF
2N4933 Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec trode construction. They are especially intended to pro vide high power as class C rf amplifiers for International	OCR Scan	2N4932 2N4933 RCA-2N4932* RCA-2N49331 88MHz) 2N4932 2N4933, 24-volt ST-3250. ST-3230. 2N4933 RCA-2N4933 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE	PDF
t 3866 power transistor Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -	OCR Scan	2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor	PDF
C940P Abstract: D1R0 1N4723 Text: 52C 6115950 MICROSEMI CORP/POWER »E I ^ H S T S Q ODOGEbO b \| 00260 Q/ D T -< 2 > 3 " Series PTC 940, PTC 9 4 1 PTC 942, PTC 943 High Voltage Fast Recovery Power Rectifiers 100 Amperes • 900-1200 Volts FEATURES • Low Forward Voltages • High Voltage Ratings - 1200 Volts	OCR Scan	G00D2L C940P D1R0 1N4723	PDF
2N3375 Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690 Text: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted	OCR Scan	2N3375 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3375 Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690	PDF
2N5707 Abstract: TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041 Text: 2N5707 SILICON NPN VH F POWER TRANSISTOR Emitter Isolated from Case Intermodulation Distortion Better Than 30 dB at 25 W P.E.P. Emitter Resistor Stabilised for Class AB S.S.B. Applications mechanical specification TO -128 absolute maximum ratings Tease = 25 °C	OCR Scan	2N5707 O-128 O-117 O-131 O-129 2N5707 TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041	PDF
2N6543 Abstract: 2N6542 2N5875 2N5877 IN4933 IN5820 5A5A Text: 2N6542 2N6543 POWER TRANSISTORS 5A, 850V, Fast Switching, Silicon NPN Mesa FEATURES D E S C R IP T IO N • C o lle c t o r -B a s e V o lta g e : u p to 850V T h e s e h ig h v o lt a g e g l a s s p a s s iv a t e d po w e r • P e a k C o lle c t o r C u rre n t: 1 0A	OCR Scan	2N6542 2N6543 500kHz IN5820 1N4937 2N6543 2N5875 2N5877 IN4933 5A5A	PDF
Untitled Abstract: No abstract text available Text: , - Ì991 IC L 6 4 4 /6 4 5 /6 4 6 /6 4 7 IC L 7 6 4 4 /7 645/7646/7647 S HARRIS Low Voltage S tep -U p Converters j u i y 1991 Features D escription • +5V @ 40mA From a Single Cell Battery The ICL644, IC L645 and IC L646 are low pow er fixed +5V output s te p -u p D C -D C converters designed for operation	OCR Scan	ICL644, ICL647, ICL646	PDF
MJE13007E Abstract: JE13006 MJE13Q07 JE13007 Text: MOTOROLA SC XSTRS/R 1EE F D I b3b72S4 a G fl SB T S ê \| T - 33-13 MOTOROLA MJE13006 MJE13007 SEMICONDUCTOR TECHNICAL DATA D esigners Data, Sheet 8 AM PERE NPN SILICON POWER TRANSISTORS 3 00 and 4 0 0 V O L T S 80 W ATTS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS	OCR Scan	b3b72S4 MJE13006 MJE13007 MJE13007E JE13006 MJE13Q07 JE13007	PDF

4933 TRANSISTOR Search Results

4933 TRANSISTOR Result Highlights (5)

4933 TRANSISTOR Datasheets Context Search

MMBR901

07MS001

Transistor C 1279

PA2423

Untitled

LSE B9 transformer

Untitled

Untitled

70413080

SD4933

Untitled

1E14

Untitled

MURATA CERAMIC CHIP ANTENNA GPS 2.1

rca 40290

T10H 250V

2N4933

t 3866 power transistor

C940P

2N3375

2N5707

2N6543

Untitled

MJE13007E