Untitled
Abstract: No abstract text available
Text: MX23C3211 32M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 100ns (max.) - Page access: 30ns (max.) • Page Size - 8 words per page • Current
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MX23C3211
32M-BIT
100ns
500mil)
MX23C3211MC-10
100ns
MX23C3211MC-12
120ns
MX23C3211TC-10
MX23C3211TC-12
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lh5348
Abstract: lh5s4 48TSO
Text: ü fi LH53V4R00 LH53V4R00-2 • Description ■ Pin Connect for T h e L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U ser's N o . : L H 5V 4R X X is a CM OS 4 M -b it m ask-program m able ROM 32-pin SOP organized as 524 288 X 8 bits. It provides a high-speed access time o f 120/150 ns with low
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LH53V4R00
LH53V4R00-2
32-pin
LHS3V4R00-2
lh5348
lh5s4
48TSO
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sharp mask rom
Abstract: LH532K
Text: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. 32-pin SO P It provides a high-speed access time of 120 ns with low voltage
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LH53V2R00
LH53V2R00N/T
32-pin
LH53V2RQ0N
LH53V2R00T
OP032-P-0525)
TSOP032-P-0820)
40DIP/40SOP/48TSOP
sharp mask rom
LH532K
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Untitled
Abstract: No abstract text available
Text: M X23L6411 64M -BIT M ask ROM 8/16 B it O u tp u t FEATURES ORDER INFORMATION • Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) • Fast access time - Random access: 120ns (max.) - Page access: 50ns (max.) • Page Size - 8 words per page • Current
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X23L6411
120ns
MX23L6411MC-12
MX23L6411TC-12
MX23L6411RC-12
120ns
A0-A21
D0-D14
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lh5s4
Abstract: lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH53V4R00N LH5H41XX TSOP032-P-0820
Text: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Description Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Pin Connection The L H 53V 4R 00N /T , L H 53V 4 R 0 0 N /T -2 U ser’s N o. : LH5V4RXX is a CMOS 4M -bit mask-programmable ROM 32-pin SOP
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LH53V4R00
LH53V4R00-2
LH53V4R00N/T,
LH53V4R00N/T-2
32-pin
LH53V4R00N
lh5s4
lh5348
sharp lh53
lh5s47xx
LH5S47
60446
sharp mask rom
LH5H41XX
TSOP032-P-0820
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LH532K
Abstract: LH53V2R00N LH53V2R00T TSQP032-P-0820 LH5V2R 48TSOP 2mbit sharp mask rom LH532CXX
Text: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. It provides a high-speed access time of 120 ns with low voltage
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LH53V2R00
LH53V2R00N/T
LH53V2R00N
32-pin
OP032-P-0525)
LH53V2R00T
TSQP032-P-0820)
Do-07
128kX
LH532K
TSQP032-P-0820
LH5V2R
48TSOP
2mbit
sharp mask rom
LH532CXX
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OTO70
Abstract: No abstract text available
Text: rfb FLASH MEMORY ☆ New product * Under developm ent • FLASH MEMORIES Continued <Boot Block*4 Smart Voltage Flash Memory> Capacity 4M 8M 16M Bit configuration x 16 x 16 x 16 Block configuration Access time (ns) MAX. (Vcc =5 V) Model No. Supply voltage
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LH28F400BGE/N/B-TL85/TL12
LH28F400BGHE/B-TL85/TL12
LH28F400BGE/N/B-BL85/BL12
LH28F400BGHE/B-BL85/BL12
OTO70
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Untitled
Abstract: No abstract text available
Text: LH532000B FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |iW (MAX.)
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LH532000B
40-pin,
600-mil
525-mil
48-pin,
LH532000B
8/128K
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Untitled
Abstract: No abstract text available
Text: SHARP LHF80BXX LH28F800BG-L 8M-BIT 512KB x16 SmartVoltage FLASH MEMORY FEATURES Sm artVoltage Techn o lo g y - 2.7V, 3.3V o r 5 V V CC - 2.7V, 3.3V, 5 V o r 12V V„, High-Perform ance - 85ns (5V V cc) R ead A ccess T im e - 120ns (2.7V Vcc) Read A ccess Tim e
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LHF80BXX
LH28F800BG-L
512KB
120ns
48-Lead
48-Bail
32k-word
32TSOP
TSOP32-P-0820)
48TS0P
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LH28F800SUTD
Abstract: No abstract text available
Text: SHARP 8M DUAL WORK LH28F800SUTD 8 MBIT 1024 KBIT x 8 ,5 12 KBIT x 16 3.3V (V „= 5 V ) DUAL WORK FLASH MEMORY FEATURES • 2 Banks Enable the Sim ultaneous Read/ W rite/Erase Operation • System Perform ance Enhancem ent - Erase Suspend fo r Read - Two-Byte W rite
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LH28F800SUTD
48-Lead,
32TSOP
TSOP32-P-0820)
48TS0P
TSOP48-P-1218)
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Untitled
Abstract: No abstract text available
Text: MX23L641 O 64M-BIT Mask ROM 8/16 Bit Output ORDER INFORMATION FEATURES • Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) • Fast access time - Random access: 120ns (max.) • Current - Operating: 60mA (max.) - Standby: 5uA (max.) • Supply voltage
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MX23L641
64M-BIT
120ns
MX23L641OMC-12
MX23L641OMC-15
MX23L6410TC
MX23L641OTC
MX23L641QRC-12
MX23L641QRC-15
120ns
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lh5359
Abstract: e5bx
Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.
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LH-532KXX
LH532100BD/BN/BT/BS/BSR/BU
532048D
53V2P00A
532600D
532000B
532000BD
LH-532C
LH-5326XX
lh5359
e5bx
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lh532k
Abstract: No abstract text available
Text: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. It provides a high-speed access time of 120 ns with low voltage
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LH53V2R00
LH53V2R00N/T
32-pin
LH53V2R00N
LH53V2R00T
OP032-P-0525)
TSOP032-P-0820)
40DIP/40SOP/48TSOP
lh532k
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Untitled
Abstract: No abstract text available
Text: MX23C321 O 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating:60mA - Standby:100uA • Supply voltage - 5V±10%
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MX23C321
32M-BIT
8/16-BIT
100ns
100uA
500mil)
MX23C3210MC-10
MX23C3210MC-12
MX23C3210MC-15
MX23C3210TC-10
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Untitled
Abstract: No abstract text available
Text: MX23C1 611 16M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 2M x 8 (byte mode) - 1M x 16 (word mode) • Fast access time - Random access: 100ns (max.) - Page access: 50ns (max.) • Page Size - 8 double words per page • Current
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MX23C1
16M-BIT
100ns
100uA
500mil)
600mm)
MX23C1611MC-10
MX23C1611MC-12
MX23C1611PC-10
MX23C1611PC-12
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