Samsung oneNand Mux
Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
MuxOneNAND512
KFM1216Q2M
48FBGA
512Mb
Samsung oneNand Mux
samsung 1Gb nand flash
SAMSUNG 256Mb NAND Flash Qualification Report
KFM1216Q2M
8017h
2112b
1001Ah
803FH
samsung 2GB Nand flash 121 pins
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10072h
Abstract: structure chart of samsung company
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
KFM1216Q2M
48FBGA
512Mb
10072h
structure chart of samsung company
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012F
Abstract: reset nand flash 804aH
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.0 Date: August 4th, 2004 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY Document Title MuxOneNAND
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MuxOneNAND512
KFM1216Q2M)
KFM1216Q2M
48FBGA
512Mb
012F
reset nand flash
804aH
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48FBGA
Abstract: No abstract text available
Text: 48FBGA FBGA048-P-0707 TOP VIEW A B 7.0 -0 +0.2 INDEX 0.4 TYP. (See Note 2) S DETAIL 0.25 ±0.05 S 7.0 +0.2 -0 1.05 MAX. 0.10 SIDE VIEW S 0.10 C 1.375 TYP. 0.375 TYP. 0.75 TYP. F D E C B A 1 2 3 4 5 6 7 8 φ 0.40 ±0.03 NOTES: 1. Dimensions are in mm. 2. * Land hole diameter for ball mounting.
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48FBGA
FBGA048-P-0707)
48FBGA-0707
48FBGA
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48FBGA
Abstract: No abstract text available
Text: 48FBGA FBGA048-P-0811 TOP VIEW A INDEX 8.0 +0.2 -0 B 0.4 TYP. (See Note 2) SIDE VIEW S DETAIL 0.25 ±0.05 S +0.2 1.05 MAX. 0.10 11.0 -0 S 0.10 0.75 TYP. C 3.625 TYP. 0.375 TYP. BOTTOM VIEW 0.75 TYP. E D C B A 1 2 3 4 5 6 φ 0.40 ±0.03 NOTES: 1. Dimensions are in mm.
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48FBGA
FBGA048-P-0811)
48FBGA-0811
48FBGA
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48FBGA
Abstract: FBGA048-P-0808
Text: 48FBGA FBGA048-P-0808 TOP VIEW A B 8.0 +0.2 -0 INDEX 0.4 TYP. (See Note 2) SIDE VIEW S DETAIL 0.25 ±0.05 S 1.05 MAX. 0.10 8.0 +0.2 -0 S 0.10 C 1.375 TYP. 0.375 TYP. 0.75 TYP. F D E C B A 1 2 3 4 5 6 7 8 φ 0.40 ±0.03 NOTES: 1. Dimensions are in mm. 2. * Land hole diameter for ball mounting.
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48FBGA
FBGA048-P-0808)
48FBGA-0808
48FBGA
FBGA048-P-0808
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K1S161611A
Abstract: K1S161611A-I
Text: Preliminary K1S161611A UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft October 6, 2003 0.1 Revised - Added Lead Free 48-FBGA-6.00x7.00 Product November 25, 2003 Preliminary
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K1S161611A
1Mx16
48-FBGA-6
55/Typ.
35/Typ.
K1S161611A
K1S161611A-I
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tba 2003
Abstract: K6F1616U6C-FF70 K6F1616 K6F1616U6C
Text: Preliminary CMOS SRAM K6F1616U6C Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark November 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F1616U6C
58/Typ.
32/Typ.
tba 2003
K6F1616U6C-FF70
K6F1616
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K1S1616B1A
Abstract: K1S1616B1A-I
Text: Preliminary UtRAM K1S1616B1A Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark October 6, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K1S1616B1A
1Mx16
K1S1616B1A
55/Typ.
35/Typ.
K1S1616B1A-I
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K6F8016R6C
Abstract: No abstract text available
Text: K6F8016R6C Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft February 7, 2003 Preliminary 1.0 Finalize July 3, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F8016R6C
58/Typ.
32/Typ.
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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K1S3216B1C-FI70
Abstract: K1S3216B1C K1S3216B1C-I
Text: Preliminary K1S3216B1C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 16, 2003 Advanced 0.1 Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0
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K1S3216B1C
2Mx16
100uA
55/Typ.
35/Typ.
K1S3216B1C-FI70
K1S3216B1C
K1S3216B1C-I
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K6F8016U6C
Abstract: No abstract text available
Text: Preliminary CMOS SRAM K6F8016U6C Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark May 1, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F8016U6C
58/Typ.
32/Typ.
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Untitled
Abstract: No abstract text available
Text: FMP3217CAx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Oct,17th, 2007 1 Revision 0.0 Oct. 2007 FMP3217CAx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
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FMP3217CAx
48-FBGA-6
FMP3217CAx-FxxX
FMP3217CAx-GxxX
FMP3217CAx-HxxX
FMP3217CA1
FMP3217CA2
25/Typ.
85/Typ.
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Untitled
Abstract: No abstract text available
Text: CMP0417AAx-E CMOS LPRAM Document Title 256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add tCP=10ns in AC characteristics Minor Changes Mar. 10th, 2004
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CMP0417AAx-E
25/Typ.
85/Typ.
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F60E
Abstract: CMP1617BA2 cmp1617ba CMP1617BX2 CMP1617BA1 CMP1617BA4 CMP1617BA5 CMP1617BX1 CMP1617BX4 CMP1617BX5
Text: CMP1617BAx-E CMOS LPRAM Document Title 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add Direct DPD Modify MRS Entry Modify PASR Current Mar. 15th, 2004
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CMP1617BAx-E
60nsec
55nsec
25/Typ.
85/Typ.
F60E
CMP1617BA2
cmp1617ba
CMP1617BX2
CMP1617BA1
CMP1617BA4
CMP1617BA5
CMP1617BX1
CMP1617BX4
CMP1617BX5
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Untitled
Abstract: No abstract text available
Text: FMP1617CCx CMOS LPRAM Document Title 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Apr. 19th, 2006 Preliminary 0.1 Revised P/N according to the new P/N system Jun.01st , 2006
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FMP1617CCx
48-FBGA-6
FMP1617CCx-FxxX
FMP1617CCx-GxxX
FMP1617CCx-HxxX
25/Typ.
85/Typ.
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Untitled
Abstract: No abstract text available
Text: CMP0817BAx-E CMOS LPRAM Document Title 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add tCP=10ns in AC characteristics Minor Changes Mar. 10th, 2004
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CMP0817BAx-E
25/Typ.
85/Typ.
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tsop 48 PIN type2
Abstract: 48BGA MR0A16AMA35
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
EST354
tsop 48 PIN type2
48BGA
MR0A16AMA35
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ba37
Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
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K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
ba37
K8D1716U
K8D1716UBC
samsung nor flash
BA251
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HY62UF16201A-I
Abstract: HY62UF16201A
Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others
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HY62UF16201A
128Kx16bit
HYUF621Ac
100ns
HY62UF16201A-I
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Untitled
Abstract: No abstract text available
Text: Advance K1S321615C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark April 18, 2003 Advanced The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K1S321615C
2Mx16
K1S321615C
55/Typ.
35/Typ.
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Untitled
Abstract: No abstract text available
Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others
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HY62QF16201A
128Kx16bit
LL/SL-pa6201A
HYQF621Ac
100ns
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Untitled
Abstract: No abstract text available
Text: HY64UD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul. 18. ’ 01 Preliminary Oct. 06. ’ 01
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HY64UD16322M
HYUD16322M
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