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Toshiba America Electronic Components TW045N120C,S1F G3 1200V SIC-MOSFET TO-247 45MO
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DigiKey	TW045N120C,S1F	Tube	111		1	1 $23.76 10 $23.76 100 $15.199 1000 $23.76 10000 $23.76	Buy Now
Mouser Electronics	TW045N120C,S1F		181			1 $23.01 10 $22.94 100 $15.2 1000 $14.62 10000 $14.62	Buy Now
TTI	TW045N120C,S1F	Tube	30		30	1 - 10 - 100 $15.22 1000 $14.63 10000 $14.63	Buy Now
IXYS Corporation IXSH45N120 IGBT 1200V 75A 300W TO247AD
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DigiKey	IXSH45N120	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGT45N120 IGBT 1200V 75A TO268AA
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DigiKey	IXGT45N120	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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IXYS Corporation IXGH45N120 IGBT 1200V 75A 300W TO247
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DigiKey	IXGH45N120	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXST45N120B IGBT PT 1200V 75A TO268AA
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DigiKey	IXST45N120B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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45N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXSH 45N120B I = 75 A C25 IXST 45N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.0 V High Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200	Original	PDF	45N120B O-247 O-268
45N120B Abstract: No abstract text available Text: IXSH 45N120B I = 75 A C25 IXST 45N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.0 V High Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200	Original	PDF	45N120B O-26m.
45N120 Abstract: IXGH45N120 45N120 ixys Text: IGBT High Voltage, Low VCE sat IXGH 45N120 VCES IXGT 45N120 IC25 VCE(sat) tfi(typ) = 1200 V = 75 A = 2.5 V = 390 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200	Original	PDF	45N120 O-247 O-268 IXGH45N120 45N120 ixys
45N120 Abstract: IXSH45N120 45N120 ixys Text: High Voltage, Low VCE sat IGBT IXSH 45N120 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 70 A = 3V Short Circuit SOA Capability Preliminary data Symbol Test Conditions VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200	Original	PDF	45N120 O-247 45N120 IXSH45N120 45N120 ixys
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXSH 45N120B IC25 = 75 A IXST 45N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.0 V High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	45N120B O-247
45N120 ixys Abstract: No abstract text available Text: Advanced Technical Information IGBT High Voltage, Low VCE sat IXGH 45N120 VCES IXGT 45N120 IC25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM	Original	PDF	45N120 O-268 O-247 O-268) 45N120 ixys
45N120 ixys Abstract: No abstract text available Text: High Voltage, Low VCE sat IGBT IXSH 45N120 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 75 A = 3V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	PDF	45N120 O-247 45N120 ixys
Untitled Abstract: No abstract text available Text: Advance Technical Information IXGH 45N120 IXGT 45N120 IGBT High Voltage, Low VCE sat Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads	Original	PDF	45N120 45N120 O-268 O-247 O-268AA
98842 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION High Voltage IGBT ISOPLUS 247TM IXSR 45N120B VCES = 1200 V IC25 = 70 A VCE sat = 3.0 V (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR	Original	PDF	247TM 45N120B 98842
igbt 500V 45A Abstract: 45N120 IXSH45N120 Text: High Voltage, Low VCE sat IGBT IXSH 45N120 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 75 A = 3V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	PDF	45N120 O-247 igbt 500V 45A 45N120 IXSH45N120
Untitled Abstract: No abstract text available Text: Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA VRRM = 600 V MEK 95-06 DA IFAV = 95 A MEE 95-06 DA trr = 250 ns 3 TO-240 AA 2 VRSM V 600 VRRM V 1 Type MEA95-06 DA 600 1 2 MEK 95-06 DA 3 1 2 Symbol Test Conditions I FRMS I FAV ¬ I FRM Tcase = 75°C	Original	PDF	O-240 MEA95-06
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	PDF	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
IXYS DSEI 2X121 Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89 Text: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700	Original	PDF	DO-203 75-08B 75-12B 75-16B 75-18B IXYS DSEI 2X121 IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89

7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
45N120 ixys Abstract: ON601 Text: mxYS IXSH 45N120 High Voltage, VCES I L O W V CE sa. I G B T C25 v CE(sat) 1200 V 75 A 3V Short Circuit SOA Capability Symbol Test Conditions v CES v CGR Tj =25°Cto 150°C 1200 Tj = 25° C to 150° C; RGE= 1 M£2 1200 Maximum Ratings V V v GES v GEM Continuous	OCR Scan	PDF	45N120 O-247 45N120 ixys ON601
Untitled Abstract: No abstract text available Text: DIXYS High Voltage, Low VCE sat IGBT IXSH 45N120 VCES = 1200 V ^C25 = 75 A = 3V V CE(sat) Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V v CGR T.J = 25°C to 150°C; Roc „ = 1 MQ 1200	OCR Scan	PDF	45N120 125oC
40N60A Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A	OCR Scan	PDF	2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	PDF	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1
30n60 Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10 Text: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100	OCR Scan	PDF	20N60 30N60 40N60 25N100 45N100 45N120 O-247 G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 45N10
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	PDF	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
30n60 Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100	OCR Scan	PDF	00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Untitled Abstract: No abstract text available Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62	OCR Scan	PDF	20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

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45N120 Search Results

45N120 Price and Stock

Toshiba America Electronic Components TW045N120C,S1F

IXYS Corporation IXSH45N120

IXYS Corporation IXGT45N120

IXYS Corporation IXGH45N120

IXYS Corporation IXST45N120B

45N120 Datasheets Context Search

Untitled

45N120B

45N120

45N120

Untitled

45N120 ixys

45N120 ixys

Untitled

98842

igbt 500V 45A

Untitled

transistor 12n60c

7n60b

IXYS DSEI 2X121

7N60B equivalent

45N120 ixys

Untitled

40N60A

B1116

30n60

12N60c equivalent

40n80

30n60

Untitled